公开(公告)号：US20050133751A1

公开(公告)日：2005-06-23

申请号：US10740969

申请日：2003-12-17

申请人： Charles Seeley ,  Richard Saia ,  Christopher Kapusta ,  David Najewicz ,  Anis Zribi ,  Guanghua (George) Wu

发明人： Charles Seeley ,  Richard Saia ,  Christopher Kapusta ,  David Najewicz ,  Anis Zribi ,  Guanghua (George) Wu

IPC分类号： F15C5/00 ,  F16K31/00 ,  F16K31/02 ,  F16K99/00

CPC分类号： F16K99/0001 ,  F15C5/00 ,  F16K31/005 ,  F16K99/0007 ,  F16K99/0048 ,  F16K2099/008

摘要： A piezoelectric microvalve and method for controlling a fluid flow through a piezoelectric microvalve are provided. The microvalve includes an inlet plenum and a flow directing structure for directing a fluid flow, wherein a first side of the structure is in fluid communication with the inlet plenum. The microvalve also includes a piezoelectric bending actuator comprising a flap portion responsive to a command signal for controlling a fluid flow through the flow directing structure. The microvalve further includes an outlet plenum in fluid communication with a second side of the flow directing structure.

摘要翻译： 提供一种用于控制通过压电微型阀的流体流动的压电微型阀和方法。 微型阀包括入口气室和用于引导流体流动的流动引导结构，其中该结构的第一侧与入口气室流体连通。 微型阀还包括压电弯曲致动器，其包括响应于用于控制通过流动引导结构的流体流的命令信号的挡板部分。 微型阀还包括与流动引导结构的第二侧流体连通的出口增压室。

公开(公告)号：US06988706B2

公开(公告)日：2006-01-24

申请号：US10740969

申请日：2003-12-17

申请人： Charles Erklin Seeley ,  Richard Joseph Saia ,  Christopher James Kapusta ,  David Joseph Najewicz ,  Anis Zribi ,  Guanghua (George) Wu

发明人： Charles Erklin Seeley ,  Richard Joseph Saia ,  Christopher James Kapusta ,  David Joseph Najewicz ,  Anis Zribi ,  Guanghua (George) Wu

IPC分类号： F16K31/02

CPC分类号： F16K99/0001 ,  F15C5/00 ,  F16K31/005 ,  F16K99/0007 ,  F16K99/0048 ,  F16K2099/008

摘要： A piezoelectric microvalve and method for controlling a fluid flow through a piezoelectric microvalve are provided. The microvalve includes an inlet plenum and a flow directing structure for directing a fluid flow, wherein a first side of the structure is in fluid communication with the inlet plenum. The microvalve also includes a piezoelectric bending actuator comprising a flap portion responsive to a command signal for controlling a fluid flow through the flow directing structure. The microvalve further includes an outlet plenum in fluid communication with a second side of the flow directing structure.

摘要翻译： 提供一种用于控制通过压电微型阀的流体流动的压电微型阀和方法。 微型阀包括入口气室和用于引导流体流动的流动引导结构，其中该结构的第一侧与入口气室流体连通。 微型阀还包括压电弯曲致动器，其包括响应于用于控制通过流动引导结构的流体流的命令信号的挡板部分。 微型阀还包括与流动引导结构的第二侧流体连通的出口增压室。

公开(公告)号：US07563692B2

公开(公告)日：2009-07-21

申请号：US11677629

申请日：2007-02-22

申请人： Jeffrey Bernard Fortin ,  Guanghua (George) Wu ,  Kanakasabapathi Subramanian

发明人： Jeffrey Bernard Fortin ,  Guanghua (George) Wu ,  Kanakasabapathi Subramanian

IPC分类号： H01L21/30

CPC分类号： G01L9/0073 ,  G01L1/148

摘要： According to some embodiments, a conducting layer is formed on a first wafer. An insulating layer is formed on a second wafer. The insulating layer includes a cavity and a conducting area may be formed in the second wafer proximate to the cavity. The side of the conducting layer opposite the first wafer is bonded to the side of the insulating layer opposite the second wafer. At least some of the first wafer is then removed, without removing at least some of the conducting layer, to form a conducting diaphragm that is substantially parallel to the second wafer. In this way, an amount of capacitance between the diaphragm and the conducting area may be measured to determine an amount of pressure being applied to the diaphragm.

公开(公告)号：US07560788B2

公开(公告)日：2009-07-14

申请号：US10945399

申请日：2004-09-20

申请人： Jeffrey Fortin ,  Guanghua (George) Wu ,  Kanakasabapathi Subramanian

发明人： Jeffrey Fortin ,  Guanghua (George) Wu ,  Kanakasabapathi Subramanian

IPC分类号： H01L29/78

CPC分类号： G01L9/0073 ,  G01L1/148

摘要： According to some embodiments, a conducting layer is formed on a first wafer. An insulating layer is formed on a second wafer. The insulating layer includes a cavity and a conducting area may be formed in the second wafer proximate to the cavity. The side of the conducting layer opposite the first wafer is bonded to the side of the insulating layer opposite the second wafer. At least some of the first wafer is then removed, without removing at least some of the conducting layer, to form a conducting diaphragm that is substantially parallel to the second wafer. In this way, an amount of capacitance between the diaphragm and the conducting area may be measured to determine an amount of pressure being applied to the diaphragm.

摘要翻译： 根据一些实施例，在第一晶片上形成导电层。 在第二晶片上形成绝缘层。 绝缘层包括空腔，并且导电区域可以形成在靠近空腔的第二晶片中。 与第一晶片相对的导电层的一侧被结合到与第二晶片相对的绝缘层的一侧。 然后去除至少一些第一晶片，而不去除至少一些导电层，以形成基本上平行于第二晶片的导电隔膜。 以这种方式，可以测量隔膜和导电区域之间的电容量，以确定施加到隔膜的压力的量。