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公开(公告)号：US11837299B2
公开(公告)日：2023-12-05
申请号：US17716122
申请日：2022-04-08
申请人： Chen-Feng Chang
发明人： Chen-Feng Chang , Tien-Sheng Chao
CPC分类号： G11C17/12 , G11C11/5671 , G11C16/0466 , H10B20/20 , H10B43/00
摘要： An operation method of a multi-bits read only memory includes a step of applying a gate voltage to a conductive gate, a first voltage to a first electrode, and a second voltage to a second electrode. The multi-bits read only memory of the present invention includes a substrate and a transistor structure with the conductive gate mounted between the first electrode and the second electrode, a first oxide located between the first electrode and the conductive gate, and a second oxide located between the second electrode and the conductive gate. The present invention creates an initial state wherein the transistor structure is not conducting, an intermediate state wherein the first oxide is punched through by the first voltage, and a fully opened state wherein both the first oxide and the second oxide are punched through. The aforementioned states allow storage of multiple bits on the read only memory.
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公开(公告)号：US12080363B2
公开(公告)日：2024-09-03
申请号：US17722534
申请日：2022-04-18
申请人： Chen-Feng Chang
发明人： Chen-Feng Chang , Tien-Sheng Chao
CPC分类号： G11C17/12 , G11C11/5671 , G11C16/0466 , H10B20/20 , H10B43/00 , H01L29/0673 , H01L29/42392
摘要： An operation method of a multi-bits read only memory includes a step of applying a gate voltage to a conductive gate, a first voltage to a first electrode, and a second voltage to a second electrode. The multi-bits read only memory includes a substrate and a transistor structure with the conductive gate mounted between the first electrode and the second electrode. A multiplicity of M nanowire channels is mounted between the first electrode and the second electrode, and M is a positive integer greater than one. The operation method breaks multiple states of the multi-bits read only memory. The multiple states are programmable and include an ith state, and 1≤ i≤ M. The aforementioned states allow storage of multiple bits on the read only memory, instead of just storing a single bit on the read only memory.
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