公开(公告)号：US06555474B1

公开(公告)日：2003-04-29

申请号：US10060820

申请日：2002-01-29

申请人： Cheng Lin Huang ,  Minghsing Tsai ,  Winston Shue ,  Mong-Song Liang

发明人： Cheng Lin Huang ,  Minghsing Tsai ,  Winston Shue ,  Mong-Song Liang

IPC分类号： H01L2144

CPC分类号： H01L21/76834 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76852 ,  H01L21/76867 ,  H01L21/76873

摘要： A method of forming a protective layer included in a metal filled semiconductor feature including providing a substrate including an insulating dielectric material having an anisotropically etched opening for forming a semiconductor feature; conformally depositing over the semiconductor feature at least one metal layer to substantially fill the semiconductor feature at least a portion of the at least one metal layer containing dopant impurities; and, thermally treating the substrate for a time period sufficient to redistribute the dopant impurities to preferentially collect along the periphery of the at least one metal layer.

摘要翻译： 一种形成包含在金属填充的半导体特征中的保护层的方法，包括提供包括具有用于形成半导体特征的各向异性蚀刻开口的绝缘介电材料的基板; 在所述半导体特征上共形沉积至少一个金属层以基本上填充所述至少一部分所述至少一个含有掺杂杂质的金属层的所述半导体特征; 并且将衬底热处理足以重新分布掺杂剂杂质的时间段，以优先地沿着至少一个金属层的周边收集。