公开(公告)号：US07539065B2

公开(公告)日：2009-05-26

申请号：US11930132

申请日：2007-10-31

申请人： Cheng-Hsing Hsu ,  Hao-Ming Lien

发明人： Cheng-Hsing Hsu ,  Hao-Ming Lien

IPC分类号： G11C16/04

CPC分类号： H01L29/7923 ,  G11C16/12 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/4232 ,  H01L29/66833

摘要： A non-volatile memory having a gate structure, a pair of storage units and two assist gates is provided. The gate structure is disposed on the substrate. The storage units are disposed on the sidewalls of the gate structure. The assist gates are disposed on the respective sides of the gate structure and adjacent to the storage units. Each assist gate is shared between two adjacent memory cells. The gate structure, the storage units and the assist gates are electrically isolated from one another.

摘要翻译： 提供具有栅极结构的非易失性存储器，一对存储单元和两个辅助栅极。 栅极结构设置在基板上。 存储单元设置在栅极结构的侧壁上。 辅助闸门设置在闸门结构的相应侧面上并且与储存单元相邻。 每个辅助门在两个相邻的存储单元之间共享。 栅极结构，存储单元和辅助栅极彼此电隔离。

公开(公告)号：US20080056009A1

公开(公告)日：2008-03-06

申请号：US11930132

申请日：2007-10-31

申请人： Cheng-Hsing Hsu ,  Hao-Ming Lien

发明人： Cheng-Hsing Hsu ,  Hao-Ming Lien

IPC分类号： G11C16/04 ,  G11C11/34

CPC分类号： H01L29/7923 ,  G11C16/12 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/4232 ,  H01L29/66833

摘要： A non-volatile memory having a gate structure, a pair of storage units and two assist gates is provided. The gate structure is disposed on the substrate. The storage units are disposed on the sidewalls of the gate structure. The assist gates are disposed on the respective sides of the gate structure and adjacent to the storage units. Each assist gate is shared between two adjacent memory cells. The gate structure, the storage units and the assist gates are electrically isolated from one another.

摘要翻译： 提供具有栅极结构的非易失性存储器，一对存储单元和两个辅助栅极。 栅极结构设置在基板上。 存储单元设置在栅极结构的侧壁上。 辅助闸门设置在闸门结构的相应侧面上并且与储存单元相邻。 每个辅助门在两个相邻的存储单元之间共享。 栅极结构，存储单元和辅助栅极彼此电隔离。

公开(公告)号：US07307882B2

公开(公告)日：2007-12-11

申请号：US11160561

申请日：2005-06-29

申请人： Cheng-Hsing Hsu ,  Hao-Ming Lien

发明人： Cheng-Hsing Hsu ,  Hao-Ming Lien

IPC分类号： G11C16/04 ,  H01L29/788

CPC分类号： H01L29/7923 ,  G11C16/12 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/4232 ,  H01L29/66833

摘要： A non-volatile memory having a gate structure, a pair of storage units and two assist gates is provided. The gate structure is disposed on the substrate. The storage units are disposed on the sidewalls of the gate structure. The assist gates are disposed on the respective sides of the gate structure and adjacent to the storage units. Each assist gate is shared between two adjacent memory cells. The gate structure, the storage units and the assist gates are electrically isolated from one another.

摘要翻译： 提供具有栅极结构的非易失性存储器，一对存储单元和两个辅助栅极。 栅极结构设置在基板上。 存储单元设置在栅极结构的侧壁上。 辅助闸门设置在闸门结构的相应侧面上并且与储存单元相邻。 每个辅助门在两个相邻的存储单元之间共享。 栅极结构，存储单元和辅助栅极彼此电隔离。

公开(公告)号：US07218554B2

公开(公告)日：2007-05-15

申请号：US11160097

申请日：2005-06-08

申请人： Cheng-Hsing Hsu ,  Chao-I Wu ,  Hao-Ming Lien ,  Ming-Hsiang Hsueh

发明人： Cheng-Hsing Hsu ,  Chao-I Wu ,  Hao-Ming Lien ,  Ming-Hsiang Hsueh

IPC分类号： G11C16/04

CPC分类号： G11C16/3418 ,  G11C16/0466

摘要： A method of using a non-volatile memory that utilizes a charge-trapping layer for data storage is described. A refresh step is performed, after the non-volatile memory is subject to multiple write/erase cycles causing hard-to-erase electrons in the charge-trapping layer, to eliminate the hard-to-erase electrons. After the refresh step, the non-volatile memory is used again.

摘要翻译： 描述了使用利用电荷捕获层进行数据存储的非易失性存储器的方法。 在非易失性存储器经受多次写入/擦除周期之后，在电荷俘获层中产生难以擦除的电子的情况下，执行刷新步骤，以消除难以擦除的电子。 刷新步骤后，再次使用非易失性存储器。

公开(公告)号：US20070001210A1

公开(公告)日：2007-01-04

申请号：US11160561

申请日：2005-06-29

申请人： Cheng-Hsing Hsu ,  Hao-Ming Lien

发明人： Cheng-Hsing Hsu ,  Hao-Ming Lien

IPC分类号： H01L29/76

CPC分类号： H01L29/7923 ,  G11C16/12 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/4232 ,  H01L29/66833

摘要： A non-volatile memory having a gate structure, a pair of storage units and two assist gates is provided. The gate structure is disposed on the substrate. The storage units are disposed on the sidewalls of the gate structure. The assist gates are disposed on the respective sides of the gate structure and adjacent to the storage units. Each assist gate is shared between two adjacent memory cells. The gate structure, the storage units and the assist gates are electrically isolated from one another.

摘要翻译： 提供具有栅极结构的非易失性存储器，一对存储单元和两个辅助栅极。 栅极结构设置在基板上。 存储单元设置在栅极结构的侧壁上。 辅助闸门设置在闸门结构的相应侧面上并且与储存单元相邻。 每个辅助门在两个相邻的存储单元之间共享。 栅极结构，存储单元和辅助栅极彼此电隔离。