METHODS OF FORMING PATTERN STRUCTURES AND METHODS OF FORMING CAPACITORS USING THE SAME
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    发明申请
    METHODS OF FORMING PATTERN STRUCTURES AND METHODS OF FORMING CAPACITORS USING THE SAME 审中-公开
    形成图案结构的方法及使用其形成电容器的方法

    公开(公告)号:US20130140265A1

    公开(公告)日:2013-06-06

    申请号:US13608232

    申请日:2012-09-10

    IPC分类号: H01G9/00 B44C1/22

    摘要: A method of manufacturing a pattern structure, the method includes sequentially forming a mold layer and a mask layer on a substrate, patterning the mask layer to form a mask having a plurality of first and second holes located at vertices of hexagons that form a honeycomb structure, forming filling layer patterns in the first and second holes, removing the mask, forming a spacer on sidewalls of the filling layer patterns and the spacer has a plurality of third holes at centers of the hexagons, removing the filling layer patterns to form an etching mask including the spacer, and etching the mold layer using the etching mask to form the pattern structure having a plurality of openings located at the vertices and the centers of the hexagons.

    摘要翻译: 一种图案结构的制造方法,其特征在于,在基板上依次形成模具层和掩模层,对掩模层进行图案化,形成掩模,该掩模具有位于形成蜂窝结构体的六边形顶点的多个第一和第二孔 在第一和第二孔中形成填充层图案,去除掩模,在填充层图案的侧壁上形成间隔物,并且间隔物在六边形的中心处具有多个第三孔,去除填充层图案以形成蚀刻 掩模,并且使用蚀刻掩模蚀刻模具层以形成具有位于六边形的顶点和中心处的多个开口的图案结构。