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公开(公告)号：US20130127694A1
公开(公告)日：2013-05-23
申请号：US13299780
申请日：2011-11-18
CPC分类号： H01L29/78693 , H01L29/66969 , H01L29/78618
摘要： This disclosure provides systems, methods and apparatus for fabricating thin film transistor (TFT) devices. In one aspect, a substrate having a source area, a drain area, and a channel area is provided. Metal cations are implanted in the oxide semiconductor layer overlying the source area and the drain area of the substrate. The metal cation implantation forms a doped n-type oxide semiconductor in the oxide semiconductor layer overlying the source area and the drain area of the substrate.
摘要翻译： 本公开提供了用于制造薄膜晶体管（TFT）器件的系统，方法和装置。 一方面，提供了具有源极区域，漏极区域和沟道区域的衬底。 将金属阳离子注入覆盖衬底的源极区域和漏极区域的氧化物半导体层中。 金属阳离子注入在覆盖衬底的源极区和漏极区的氧化物半导体层中形成掺杂的n型氧化物半导体。
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公开(公告)号：US20130265216A1
公开(公告)日：2013-10-10
申请号：US13441553
申请日：2012-04-06
CPC分类号： G02B26/001
摘要： A display apparatus may include a multi-state IMOD, such as an analog IMOD (AIMOD), a 3-state IMOD (such as having a white state, a black state and one colored state) or a 5-state IMOD (such as having a white state, a black state and three colored states). The multi-state IMOD may include a movable reflective layer and an absorber stack. The absorber stack may include a first absorber layer having a first absorption coefficient and a first absorption peak at a first wavelength, a second absorber layer having a second absorption coefficient and a second absorption peak at a second wavelength, and a third absorber layer having a third absorption coefficient and a third absorption peak at a third wavelength. The first, second and third absorption layers may have absorption levels that drop to nearly zero at the center of each neighboring absorber layer's absorption peak.
摘要翻译： 显示装置可以包括多状态IMOD，例如模拟IMOD（AIMOD），3状态IMOD（例如具有白色状态，黑色状态和一种彩色状态）或5状态IMOD（例如 具有白色状态，黑色状态和三种彩色状态）。 多态IMOD可以包括可移动反射层和吸收体堆。 吸收体层可以包括具有第一吸收系数和第一波长的第一吸收峰的第一吸收层，具有第二吸收系数的第二吸收层和在第二波长处的第二吸收峰，以及第三吸收层， 第三吸收系数和第三波长处的第三吸收峰。 第一，第二和第三吸收层可以具有在每个相邻吸收层的吸收峰的中心处几乎为零的吸收水平。
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3.发明申请公开(公告)号：US20140036340A1
公开(公告)日：2014-02-06
申请号：US13565688
申请日：2012-08-02
申请人： John Hyunchul Hong , Isak Clark Reines , Chong Uk Lee , Tallis Young Chang , Yaoling Pan , Edward Keat Leem Chan
发明人： John Hyunchul Hong , Isak Clark Reines , Chong Uk Lee , Tallis Young Chang , Yaoling Pan , Edward Keat Leem Chan
CPC分类号： G02B26/001
摘要： This disclosure provides systems, methods and apparatus for a thin film stack with surface-conditioning buffer layers. In one aspect, the thin film stack includes a plurality of thin film layers each having a thickness greater than about 10 nm and a plurality of surface-conditioning buffer layers each having a thickness between about 1 nm and about 10 nm. The surface-conditioning buffer layers are alternatingly disposed between the thin film layers. Each of the surface-conditioning buffer layers are formed with the same or substantially the same thickness and composition. In some implementations, the surface-conditioning buffer layers are formed by atomic layer deposition.
摘要翻译： 本公开提供了具有表面调节缓冲层的薄膜堆叠的系统，方法和装置。 在一个方面，薄膜堆叠包括多个厚度大于约10nm的薄膜层以及各自具有约1nm至约10nm厚度的多个表面调节缓冲层。 表面调节缓冲层交替地设置在薄膜层之间。 每个表面调节缓冲层以相同或基本上相同的厚度和组成形成。 在一些实施方案中，表面调节缓冲层通过原子层沉积形成。
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4.发明授权公开(公告)号：US08817358B2
公开(公告)日：2014-08-26
申请号：US13565688
申请日：2012-08-02
申请人： John Hyunchul Hong , Isak Clark Reines , Chong Uk Lee , Tallis Young Chang , Yaoling Pan , Edward Keat Leem Chan
发明人： John Hyunchul Hong , Isak Clark Reines , Chong Uk Lee , Tallis Young Chang , Yaoling Pan , Edward Keat Leem Chan
CPC分类号： G02B26/001
摘要： This disclosure provides systems, methods and apparatus for a thin film stack with surface-conditioning buffer layers. In one aspect, the thin film stack includes a plurality of thin film layers each having a thickness greater than about 10 nm and a plurality of surface-conditioning buffer layers each having a thickness between about 1 nm and about 10 nm. The surface-conditioning buffer layers are alternatingly disposed between the thin film layers. Each of the surface-conditioning buffer layers are formed with the same or substantially the same thickness and composition. In some implementations, the surface-conditioning buffer layers are formed by atomic layer deposition.
摘要翻译： 本公开提供了具有表面调节缓冲层的薄膜堆叠的系统，方法和装置。 在一个方面，薄膜堆叠包括多个厚度大于约10nm的薄膜层以及各自具有约1nm至约10nm厚度的多个表面调节缓冲层。 表面调节缓冲层交替地设置在薄膜层之间。 每个表面调节缓冲层以相同或基本上相同的厚度和组成形成。 在一些实施方案中，表面调节缓冲层通过原子层沉积形成。
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5.发明授权Matching layer thin-films for an electromechanical systems reflective display device 有权用于机电系统反射显示装置的匹配层薄膜公开(公告)号：US08736939B2
公开(公告)日：2014-05-27
申请号：US13289937
申请日：2011-11-04
CPC分类号： G02B26/08 , G02B5/285 , G02B26/001
摘要： This disclosure provides systems, methods and apparatus for an electromechanical systems reflective display device. In one aspect, an electromechanical systems display device includes a reflective layer and an absorber layer. The absorber layer is spaced apart from the reflective layer to define a cavity between the absorber layer and the reflective layer. The absorber layer is capable of transmitting light into the cavity, absorbing light, and reflecting light, and includes a metal layer. A plurality of matching layers are on a surface of the absorber layer facing away from the cavity, the plurality of matching layers including a first matching layer disposed on the absorber layer and a second matching layer disposed on the first matching layer.
摘要翻译： 本公开提供了用于机电系统反射显示装置的系统，方法和装置。 一方面，机电系统显示装置包括反射层和吸收层。 吸收层与反射层间隔开以限定吸收层和反射层之间的空腔。 吸收层能够将光透射到空腔中，吸收光和反射光，并且包括金属层。 多个匹配层位于吸收体层背离空腔的表面上，多个匹配层包括设置在吸收层上的第一匹配层和设置在第一匹配层上的第二匹配层。
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公开(公告)号：US09379254B2
公开(公告)日：2016-06-28
申请号：US13299780
申请日：2011-11-18
IPC分类号： H01L29/10 , H01L29/786 , H01L29/66
CPC分类号： H01L29/78693 , H01L29/66969 , H01L29/78618
摘要： This disclosure provides systems, methods and apparatus for fabricating thin film transistor (TFT) devices. In one aspect, a substrate having a source area, a drain area, and a channel area is provided. Metal cations are implanted in the oxide semiconductor layer overlying the source area and the drain area of the substrate. The metal cation implantation forms a doped n-type oxide semiconductor in the oxide semiconductor layer overlying the source area and the drain area of the substrate.
摘要翻译： 本公开提供了用于制造薄膜晶体管（TFT）器件的系统，方法和装置。 一方面，提供了具有源极区域，漏极区域和沟道区域的衬底。 将金属阳离子注入覆盖衬底的源极区域和漏极区域的氧化物半导体层中。 金属阳离子注入在覆盖衬底的源极区和漏极区的氧化物半导体层中形成掺杂的n型氧化物半导体。
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公开(公告)号：US09075226B2
公开(公告)日：2015-07-07
申请号：US13441553
申请日：2012-04-06
IPC分类号： G02B26/00
CPC分类号： G02B26/001
摘要： A display apparatus may include a multi-state IMOD, such as an analog IMOD (AIMOD), a 3-state IMOD (such as having a white state, a black state and one colored state) or a 5-state IMOD (such as having a white state, a black state and three colored states). The multi-state IMOD may include a movable reflective layer and an absorber stack. The absorber stack may include a first absorber layer having a first absorption coefficient and a first absorption peak at a first wavelength, a second absorber layer having a second absorption coefficient and a second absorption peak at a second wavelength, and a third absorber layer having a third absorption coefficient and a third absorption peak at a third wavelength. The first, second and third absorption layers may have absorption levels that drop to nearly zero at the center of each neighboring absorber layer's absorption peak.
摘要翻译： 显示装置可以包括多状态IMOD，例如模拟IMOD（AIMOD），3状态IMOD（例如具有白色状态，黑色状态和一种彩色状态）或5状态IMOD（例如 具有白色状态，黑色状态和三种彩色状态）。 多态IMOD可以包括可移动反射层和吸收体堆。 吸收体层可以包括具有第一吸收系数和第一波长的第一吸收峰的第一吸收层，具有第二吸收系数的第二吸收层和在第二波长处的第二吸收峰，以及第三吸收层， 第三吸收系数和第三波长处的第三吸收峰。 第一，第二和第三吸收层可以具有在每个相邻吸收层的吸收峰的中心处几乎为零的吸收水平。
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