公开(公告)号：US6042777A

公开(公告)日：2000-03-28

申请号：US366453

申请日：1999-08-03

申请人： Chi-Fung Lo ,  Darryl Draper ,  Hung-Lee Hoo ,  Paul S. Gilman

发明人： Chi-Fung Lo ,  Darryl Draper ,  Hung-Lee Hoo ,  Paul S. Gilman

IPC分类号： B22F3/15 ,  C22C1/04 ,  C23C14/34 ,  B22F3/12 ,  B22F7/04

CPC分类号： C22C1/0491 ,  C23C14/3414 ,  B22F2998/10

摘要： There is provided a method for fabricating intermetallic sputter targets of two or more elements in which a mixture of two or more elemental powders are blended and synthesized within a pressing apparatus at a temperature below the melting point of the lowest melting point element in the mixture, followed by heating the synthesized intermetallic powder in the pressing apparatus to a temperature below the melting point of the intermetallic structure while simultaneously applying pressure to the powder to achieve a final density greater than 90% of theoretical density. The powder metallurgy technique of the present invention provides a better microstructure than cast structures, and avoids contamination of the sputter target by eliminating the crushing step of synthesized intermetallic chunks necessitated by separate steps of synthesizing and pressing.

摘要翻译： 提供了一种用于制造两种或更多种元素的金属间溅射靶的方法，其中将两种或更多种元素粉末的混合物在压制装置内在低于混合物中最低熔点元素的熔点的温度下混合并合成， 然后将压制装置中合成的金属间化合物加热到低于金属间结构熔点的温度，同时向粉末施加压力以达到理论密度的90％以上的最终密度。 本发明的粉末冶金技术提供比铸造结构更好的微观结构，并且通过消除合成和压制的单独步骤所需的合成金属间块的破碎步骤来避免溅射靶的污染。

公开(公告)号：US5989673A

公开(公告)日：1999-11-23

申请号：US885943

申请日：1997-06-30

申请人： Wei Xiong ,  Hung-Lee Hoo

发明人： Wei Xiong ,  Hung-Lee Hoo

IPC分类号： C22C32/00 ,  C23C14/34 ,  G11B5/64 ,  G11B5/73 ,  G11B5/738 ,  G11B5/851 ,  G11B5/66

CPC分类号： G11B5/7325 ,  C22C32/0026 ,  C23C14/3414 ,  G11B5/656 ,  Y10S428/90 ,  Y10T428/12465 ,  Y10T428/12847 ,  Y10T428/12854 ,  Y10T428/265 ,  Y10T428/30

摘要： Chromium-tantalum oxides (Cr-TaO.sub.x), including chromium-tantalum pentoxide (Cr-Ta.sub.2 O.sub.5), chromium-tantalum tetrioxide (Cr-Ta.sub.2 O.sub.4 or Cr-TaO.sub.2), sputtering targets containing them, and their manufacture are disclosed. The targets are characterized by high density, uniform TaO.sub.x distribution, low impedance and stable plasma during the sputtering. The Cr-Ta oxides are used as a thin film sublayer to improve the coercivity and other characteristics of magnetic recording media deposited on metallic or non-metallic substrates used in hard disks for data storage.

摘要翻译： 公开了包含五氧化二钽（Cr-Ta 2 O 5），三氧化二钽（Cr-Ta 2 O 4或Cr-TaO 2）的铬 - 钽氧化物（Cr-TaO x），含有它们的溅射靶及其制造。 目标的特征是溅射期间的高密度，均匀的TaOx分布，低阻抗和稳定的等离子体。 Cr-Ta氧化物用作薄膜子层，以提高沉积在用于数据存储的硬盘中的金属或非金属基底上的磁记录介质的矫顽力和其它特性。

公开(公告)号：US06190516B1

公开(公告)日：2001-02-20

申请号：US09413073

申请日：1999-10-06

申请人： Wei Xiong ,  Hung-Lee Hoo ,  Peter McDonald

发明人： Wei Xiong ,  Hung-Lee Hoo ,  Peter McDonald

IPC分类号： C23C1434

CPC分类号： H01J37/3426 ,  C23C14/3414 ,  C23C14/35

摘要： A planar ferromagnetic sputter target is provided for use as cathode in the magnetron sputtering of magnetic thin films, wherein the ferromagnetic material has localized regions of differing magnetic permeability. A solid, unitary, planar sputter target is formed from a ferromagnetic material, such as cobalt, nickel, iron or an alloy thereof, and this planar target is subjected to mechanical deformation, heat treatment, and/or thermal-mechanical treatment to create regions within the sputter target having different permeability than adjacent regions. The permeability differences in the ferromagnetic sputter target guides the path of the magnetic flux flow through the target to thereby increase the magnetic leakage flux at the target sputtering surface.

摘要翻译： 提供了一种用于磁性薄膜磁控溅射中的阴极的平面铁磁溅射靶，其中铁磁材料具有不同磁导率的局部区域。 固体，单一的平面溅射靶由铁磁材料（例如钴，镍，铁或其合金）形成，并且该平面靶被进行机械变形，热处理和/或热机械处理以产生区域 在溅射靶内具有不同于相邻区域的导磁率。 铁磁溅射靶中的磁导率差引导磁通流过靶的路径，从而增加目标溅射表面的漏磁通。