公开(公告)号：US08448046B2

公开(公告)日：2013-05-21

申请号：US12260139

申请日：2008-10-29

申请人： Chi-Hsiang Hung

发明人： Chi-Hsiang Hung

IPC分类号： G06F11/00

CPC分类号： G06F12/0246 ,  G06F11/1068 ,  G06F2212/7211 ,  G11C16/349 ,  G11C2029/0411

摘要： Methods and devices capable of erasing a flash memory evenly are provided, in which a flash memory comprises a data region with a plurality of data blocks and a spare region with a plurality of spare blocks, and a controller retrieves a corresponding data with a check code from a first data block of the flash memory according to a read command from a host, performs a predetermined check to the corresponding data by the check code, determines whether an error is correctable when a check result of the predetermined check represents that the error has occurred, and increases an erase count of the first data block by a predetermined value when the error is correctable.

摘要翻译： 提供能够均匀地擦除闪速存储器的方法和装置，其中闪速存储器包括具有多个数据块的数据区域和具有多个备用块的备用区域，并且控制器用检查码检索对应的数据 根据来自主机的读取命令从闪速存储器的第一数据块，通过检查码对对应的数据执行预定检查，当预定检查的检查结果表示错误具有时，确定错误是否可校正 并且当错误可校正时，将第一数据块的擦除计数增加预定值。

公开(公告)号：US08281063B2

公开(公告)日：2012-10-02

申请号：US12244131

申请日：2008-10-02

申请人： Cheng-Chih Yu ,  Wu-Chi Kuo ,  Hsiao-Chun Pan ,  Chi-Hsiang Hung

发明人： Cheng-Chih Yu ,  Wu-Chi Kuo ,  Hsiao-Chun Pan ,  Chi-Hsiang Hung

IPC分类号： G06F13/00

CPC分类号： G06F12/0246 ,  G06F12/0804 ,  G06F2212/7203

摘要： A data programming device is provided and comprises a non-volatile memory, a volatile memory, and a memory control unit. The non-volatile memory is arranged for programming data. The volatile memory is arranged for temporarily storing data. The memory control unit is arranged for receiving data and determining whether the data is programmed into the non-volatile memory or stored into the volatile memory. If the data exceeds one page, the memory control unit programs a first portion of the data into the non-volatile memory and stores a second portion of the data, which is insufficient for one page, into the volatile memory.

摘要翻译： 提供了数据编程装置，并且包括非易失性存储器，易失性存储器和存储器控制单元。 非易失性存储器被布置用于编程数据。 易失性存储器用于临时存储数据。 存储器控制单元被布置用于接收数据并确定数据是否被编程到非易失性存储器中或存储到易失性存储器中。 如果数据超过一页，则存储器控制单元将数据的第一部分编程到非易失性存储器中，并将不足一页的数据的第二部分存储到易失性存储器中。

公开(公告)号：US20120027995A1

公开(公告)日：2012-02-02

申请号：US13271254

申请日：2011-10-12

申请人： Chi-Hsiang Hung

发明人： Chi-Hsiang Hung

IPC分类号： B32B3/10

CPC分类号： B05D5/083 ,  B05D1/185 ,  B05D7/52 ,  Y10T428/24372

摘要： A coating structure includes a UV-cured resin layer and a fluoride monomolecular layer. Organosilicon groups of organosilicon molecules extend from the surface of the resin layer. Wax fine powder and oxide nanoparticles emerge from the surface of the resin layer to form mountain-valley-like microstructures. Fluoride molecules of the fluoride monomolecular layer are chemically bonded with the surface of the resin layer to expose the fluoride groups. During the formation of the coating structure, the UV-curable resin layer is first partially cured, then the fluoride molecules are activated to chemically bond to the surface of the resin layer, and thereafter, the UV-curable resin layer is completely cured.

摘要翻译： 涂层结构包括UV固化树脂层和氟化物单分子层。 有机硅分子的有机硅基团从树脂层的表面延伸。 蜡细粉末和氧化物纳米颗粒从树脂层的表面露出，形成山谷状微结构。 氟化物单分子层的氟化物分子与树脂层的表面化学键合以暴露氟化物基团。 在形成涂层结构时，首先将UV固化树脂层部分固化，然后激活氟化物分子以与树脂层的表面化学键合，然后使紫外线固化树脂层完全固化。

公开(公告)号：US08190810B2

公开(公告)日：2012-05-29

申请号：US12105407

申请日：2008-04-18

申请人： Chi-Hsiang Hung ,  Hsiao-Chun Pan ,  Wu-Chi Kuo

发明人： Chi-Hsiang Hung ,  Hsiao-Chun Pan ,  Wu-Chi Kuo

IPC分类号： G06F12/00

CPC分类号： G06F12/0246

摘要： A non-volatile memory apparatus and a method for accessing the non-volatile memory apparatus are provided. The non-volatile memory apparatus comprises a management unit, a look-up table and a controller. The management unit comprises a plurality of data blocks and a plurality of spare blocks. The look-up table is adapted to record the read status of the management unit. The controller is configured to read the management unit and then generate the read status denoting the times that the management unit has been read to the look-up table, and to replace one of the data blocks by one of the spare blocks in response to the read status when the times that the management unit has been read exceeds a reference value.

摘要翻译： 提供了非易失性存储装置和用于访问非易失性存储装置的方法。 非易失性存储装置包括管理单元，查找表和控制器。 管理单元包括多个数据块和多个备用块。 查找表适用于记录管理单元的读取状态。 控制器被配置为读取管理单元，然后将表示管理单元已读取的时间的读取状态生成到查找表，并且响应于所述备用块中的一个而替换其中一个数据块 读取管理单元的时间超过参考值时的读取状态。

公开(公告)号：US20110066877A1

公开(公告)日：2011-03-17

申请号：US12772995

申请日：2010-05-03

申请人： Po-Syuan Chen ,  Chi-Hsiang Hung

发明人： Po-Syuan Chen ,  Chi-Hsiang Hung

IPC分类号： G06F11/08 ,  G06F12/00 ,  G06F12/02 ,  G06F11/00 ,  G06F13/00

CPC分类号： G06F12/0246 ,  G06F11/1441 ,  G06F2212/7209

摘要： A method for accessing a flash memory includes: writing a data stream into at least a page of at least one data block of the flash memory, where each page of the data block includes an identity code; reading at least one identity code of the page; and determining a specific page according to at least the identity code, where the specific page is a last page that the data stream is written to before the flash memory is disconnected from a power source.

摘要翻译： 用于访问闪速存储器的方法包括：将数据流写入至少一个闪速存储器的数据块的页面，其中数据块的每个页面包括标识码; 阅读页面的至少一个身份代码; 以及根据至少所述身份代码确定特定页面，其中所述特定页面是在所述闪存与电源断开之前所述数据流被写入的最后页面。

公开(公告)号：US08464132B2

公开(公告)日：2013-06-11

申请号：US12772995

申请日：2010-05-03

申请人： Po-Syuan Chen ,  Chi-Hsiang Hung

发明人： Po-Syuan Chen ,  Chi-Hsiang Hung

IPC分类号： G11C29/00

CPC分类号： G06F12/0246 ,  G06F11/1441 ,  G06F2212/7209

摘要： A method for accessing a flash memory includes: writing a data stream into at least a page of at least one data block of the flash memory, where each page of the data block includes an identity code; reading at least one identity code of the page; and determining a specific page according to at least the identity code, where the specific page is a last page that the data stream is written to before the flash memory is disconnected from a power source.

摘要翻译： 用于访问闪速存储器的方法包括：将数据流写入至少一个闪速存储器的数据块的页面，其中数据块的每个页面包括标识码; 阅读页面的至少一个身份代码; 以及根据至少所述身份代码确定特定页面，其中所述特定页面是在所述闪存与电源断开之前所述数据流被写入的最后页面。

公开(公告)号：US20100167067A1

公开(公告)日：2010-07-01

申请号：US12423778

申请日：2009-04-14

申请人： Chi-Hsiang Hung

发明人： Chi-Hsiang Hung

IPC分类号： B32B9/04 ,  C08K3/22 ,  B29C71/04

CPC分类号： B05D5/083 ,  B05D1/185 ,  B05D7/52 ,  Y10T428/24372

摘要： A coating structure includes a UV-cured resin layer and a fluoride monomolecular layer. Organosilicon groups of organosilicon molecules extend from the surface of the resin layer. Wax fine powder and oxide nanoparticles emerge from the surface of the resin layer to form mountain-valley-like microstructures. Fluoride molecules of the fluoride monomolecular layer are chemically bonded with the surface of the resin layer to expose the fluoride groups. During the formation of the coating structure, the UV-curable resin layer is first partially cured, then the fluoride molecules are activated to chemically bond to the surface of the resin layer, and thereafter, the UV-curable resin layer is completely cured.

摘要翻译： 涂层结构包括UV固化树脂层和氟化物单分子层。 有机硅分子的有机硅基团从树脂层的表面延伸。 蜡细粉末和氧化物纳米颗粒从树脂层的表面露出，形成山谷状微结构。 氟化物单分子层的氟化物分子与树脂层的表面化学键合以暴露氟化物基团。 在形成涂层结构时，首先将UV固化树脂层部分固化，然后激活氟化物分子以与树脂层的表面化学键合，然后使紫外线固化树脂层完全固化。

公开(公告)号：US20100077132A1

公开(公告)日：2010-03-25

申请号：US12260139

申请日：2008-10-29

申请人： Chi-Hsiang Hung

发明人： Chi-Hsiang Hung

IPC分类号： G06F12/02 ,  G06F11/10

CPC分类号： G06F12/0246 ,  G06F11/1068 ,  G06F2212/7211 ,  G11C16/349 ,  G11C2029/0411

摘要： Methods and devices capable of erasing a flash memory evenly are provided, in which a flash memory comprises a data region with a plurality of data blocks and a spare region with a plurality of spare blocks, and a controller retrieves a corresponding data with a check code from a first data block of the flash memory according to a read command from a host, performs a predetermined check to the corresponding data by the check code, determines whether an error is correctable when a check result of the predetermined check represents that the error has occurred, and increases an erase count of the first data block by a predetermined value when the error is correctable.

摘要翻译： 提供能够均匀地擦除闪速存储器的方法和装置，其中闪速存储器包括具有多个数据块的数据区域和具有多个备用块的备用区域，并且控制器用检查码检索对应的数据 根据来自主机的读取命令从闪速存储器的第一数据块，通过检查码对对应的数据执行预定检查，当预定检查的检查结果表示错误具有时，确定错误是否可校正 并且当错误可校正时，将第一数据块的擦除计数增加预定值。

公开(公告)号：US20120029127A1

公开(公告)日：2012-02-02

申请号：US13271261

申请日：2011-10-12

申请人： Chi-Hsiang Hung

发明人： Chi-Hsiang Hung

IPC分类号： C09D5/16 ,  C09D167/00 ,  C09D133/00 ,  C08K13/02 ,  C09D175/04 ,  B82Y30/00

CPC分类号： B05D5/083 ,  B05D1/185 ,  B05D7/52 ,  Y10T428/24372

摘要： A coating structure includes a UV-cured resin layer and a fluoride monomolecular layer. Organosilicon groups of organosilicon molecules extend from the surface of the resin layer. Wax fine powder and oxide nanoparticles emerge from the surface of the resin layer to form mountain-valley-like microstructures. Fluoride molecules of the fluoride monomolecular layer are chemically bonded with the surface of the resin layer to expose the fluoride groups. During the formation of the coating structure, the UV-curable resin layer is first partially cured, then the fluoride molecules are activated to chemically bond to the surface of the resin layer, and thereafter, the UV-curable resin layer is completely cured.

公开(公告)号：US20100088462A1

公开(公告)日：2010-04-08

申请号：US12404335

申请日：2009-03-15

申请人： Wu-Chi Kuo ,  Chi-Hsiang Hung

发明人： Wu-Chi Kuo ,  Chi-Hsiang Hung

IPC分类号： G06F12/02 ,  G06F12/00 ,  G06F12/10

CPC分类号： G06F12/0246 ,  G06F2212/7202

摘要： A method for handling data updating of a flash memory is disclosed, in which the flash memory comprises a mother block with a plurality of pages to be updated, and each page comprises a plurality of sectors. In such method, a first data for updating a target page in the mother block is obtained, and then whether the first data comprises data for updating an ending sector in the target page is determined. The first data is written into a replacing page in a first FAT block when the first data does not comprise data for updating the ending sector in the target page. The first data is written into a corresponding page in a second FAT block when the first data comprises the data for updating the ending sector, in which the corresponding page in the second FAT block and the target page in the mother block have the same page indexes.

摘要翻译： 公开了一种用于处理闪存的数据更新的方法，其中闪速存储器包括具有要更新的多个页面的母块，并且每个页面包括多个扇区。 在这种方法中，获得用于更新母块中的目标页面的第一数据，然后确定第一数据是否包括用于更新目标页面中的结束扇区的数据。 当第一数据不包括用于更新目标页面中的结束扇区的数据时，第一数据被写入第一FAT块中的替换页面。 当第一数据包括用于更新结束扇区的数据时，将第一数据写入第二FAT块中的对应页面，其中第二FAT块中的相应页和母块中的目标页具有相同的页索引 。