公开(公告)号：US20130192521A1

公开(公告)日：2013-08-01

申请号：US13753728

申请日：2013-01-30

申请人： Chi-Pao CHU ,  I-Tang JIANG ,  Sz-Hsiao CHEN ,  Kuan-Yi YANG ,  Kuan-Chou CHEN ,  Yi-Hui LEE ,  Chin-Kuei WEN

发明人： Chi-Pao CHU ,  I-Tang JIANG ,  Sz-Hsiao CHEN ,  Kuan-Yi YANG ,  Kuan-Chou CHEN ,  Yi-Hui LEE ,  Chin-Kuei WEN

IPC分类号： B05C21/00

CPC分类号： B05C21/005 ,  C23C14/042 ,  H01L27/1288

摘要： The disclosure provides a compensating design method for a shadow mask including: providing a first shadow mask having a first opening pattern and a first material pattern; disposing the first shadow mask on a substrate having a predetermined depositing film area with first and second sides; performing a deposition process by using the first shadow mask as a mask to form a film on an actual depositing film area, wherein the distance between the first and the third sides is a first bias, and the distance between the second and the fourth sides is a second bias, and a single side gray zone of the actual depositing film area relative to the predetermined depositing film area is substantially half of the sum of the first and the second biases; and designing a second shadow mask according to the single side gray zone.

摘要翻译： 本发明提供了一种用于荫罩的补偿设计方法，包括：提供具有第一开口图案和第一材料图案的第一荫罩; 将第一荫罩设置在具有第一和第二面的具有预定沉积膜区域的基板上; 通过使用第一荫罩作为掩模进行沉积处理，以在实际的沉积膜区域上形成膜，其中第一和第三面之间的距离是第一偏压，第二和第四面之间的距离为 相对于预定沉积膜区域的实际沉积膜区域的第二偏压和单侧灰色区域基本上是第一和第二偏压之和的一半; 并根据单侧灰色区域设计第二个荫罩。