公开(公告)号：US20120006687A1

公开(公告)日：2012-01-12

申请号：US12985654

申请日：2011-01-06

申请人： Chi-Woo LEE ,  Sang-Min LEE ,  Suk-In HONG ,  Ik-Ho CHOI

发明人： Chi-Woo LEE ,  Sang-Min LEE ,  Suk-In HONG ,  Ik-Ho CHOI

IPC分类号： C25D3/56 ,  C25D7/12

CPC分类号： C25D5/50 ,  C25D3/56 ,  C25D7/12 ,  H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

摘要： Disclosed herein is a method of forming a CIGS thin film, comprising the steps of: immersing a substrate comprising an electrode into an electrolyte solution comprising Na2SO4, a water-soluble copper (Cu) precursor, a water-soluble indium (In) precursor, a water-soluble gallium (Ga) precursor, and a water-soluble selenium (Se) precursor; performing electrodeposition in such a way as to apply a direct current (DC) voltage of −0.95V˜−0.85V to the electrolyte solution at room temperature and normal pressure for 10˜120 minutes to form a preliminary CIGS thin film; and heat-treating the preliminary CIGS thin film at 230˜270° C. to form a CIGS thin film.

摘要翻译： 本文公开了一种形成CIGS薄膜的方法，包括以下步骤：将包含电极的基底浸入包含Na 2 SO 4，水溶性铜（Cu）前体，水溶性铟（In）前体的电解质溶液中， 水溶性镓（Ga）前体和水溶性硒（Se）前体; 以在室温和常压下向电解液施加-0.95V〜0.85V的直流（DC）电压10〜120分钟进行电沉积，形成预备的CIGS薄膜; 并在230〜270℃下对预备的CIGS薄膜进行热处理以形成CIGS薄膜。