摘要:
In the inspection apparatus for a defect of a semiconductor and the method using it for automatically detecting the defect on a semiconductor wafer and presuming the defect occurrence factor using the circuit design data, a plurality of shapes are formed from the circuit design data by deforming the design data with respect to shape deformation items stipulated for respective defect occurrence factor for comparison with the inspection object circuit pattern. The defect is detected by comparison of the group of shapes formed and the actual pattern. Further, the occurrence factors of these defects are presumed, and the defects are classified according to respective factor.
摘要:
An apparatus and method for inspecting a defect of a circuit pattern formed on a semiconductor wafer includes a defect classifier have a comparison shape forming section for forming a plurality of comparison shapes corresponding to an SEM image of an inspection region by deforming the shape of the circuit pattern in accordance with a plurality of shape deformation rules using design data corresponding to the circuit pattern within the inspection region and a shape similar to the SEM image of the inspection region out of the plurality of comparison shapes formed and selected as the comparison shape, and a shape comparing and classifying section for classifying the SEM image using information of the comparison shape selected in the comparison shape forming section and the inspection shape of the circuit pattern of the SEM image of the inspection region.
摘要:
An apparatus and method for inspecting a defect of a circuit pattern formed on a semiconductor wafer includes a defect classifier have a comparison shape forming section for forming a plurality of comparison shapes corresponding to an SEM image of an inspection region by deforming the shape of the circuit pattern in accordance with a plurality of shape deformation rules using design data corresponding to the circuit pattern within the inspection region and a shape similar to the SEM image of the inspection region out of the plurality of comparison shapes formed and selected as the comparison shape, and a shape comparing and classifying section for classifying the SEM image using information of the comparison shape selected in the comparison shape forming section and the inspection shape of the circuit pattern of the SEM image of the inspection region.
摘要:
In the inspection apparatus for a defect of a semiconductor and the method using it for automatically detecting the defect on a semiconductor wafer and presuming the defect occurrence factor using the circuit design data, a plurality of shapes are formed from the circuit design data by deforming the design data with respect to shape deformation items stipulated for respective defect occurrence factor for comparison with the inspection object circuit pattern. The defect is detected by comparison of the group of shapes formed and the actual pattern. Further, the occurrence factors of these defects are presumed, and the defects are classified according to respective factor.
摘要:
A charged particle beam device enabling prevention of degradation of reproducibility of measurement caused by an increase of the beam diameter attributed to an image shift and having a function of dealing with device-to-device variation. The charged particle beam device is used for measuring the dimensions of a pattern on a specimen using a line profile obtained by detecting secondary charged particles emitted from the specimen when the specimen is scanned with a primary charged particle beam converged on the specimen. A lookup table in which the position of image shift and the variation of the beam diameter are associated is prepared in advance by actual measurement or calculation and registered. When the dimensions are measured, image processing is carried out so as to correct the line profile for the variation of the beam diameter while the lookup table is referenced, and thereby the situation where the beam diameter is effectively equal is produced irrespective of the position of the image shift. Whit this, measurement by the charged particle beam excellent reproducibility can be carried out.
摘要:
A charged particle beam device enabling prevention of degradation of reproducibility of measurement caused by an increase of the beam diameter attributed to an image shift and having a function of dealing with device-to-device variation. The charged particle beam device is used for measuring the dimensions of a pattern on a specimen using a line profile obtained by detecting secondary charged particles emitted from the specimen when the specimen is scanned with a primary charged particle beam converged on the specimen. A lookup table in which the position of image shift and the variation of the beam diameter are associated is prepared in advance by actual measurement or calculation and registered. When the dimensions are measured, image processing is carried out so as to correct the line profile for the variation of the beam diameter while the lookup table is referenced, and thereby the situation where the beam diameter is effectively equal is produced irrespective of the position of the image shift. Whit this, measurement by the charged particle beam excellent reproducibility can be carried out.
摘要:
The invention relates to a technique of improving a contrast of a lower-layer pattern in a multi layer by synthesizing detected signals from a plurality of detectors by using an appropriate allocation ratio in accordance with pattern arrangement. In a charged particle beam device capable of improving image quality by using detected images obtained from a plurality of detectors and in a method of improving the image quality, a method of generating one or more output images from detected images corresponding to respective outputs of the detectors that are arranged at different locations is controlled by using information of a pattern direction, an edge strength, or others calculated from a design data or the detected image. In this manner, a detection area of the detected signals can be expanded by using the plurality of detectors, and the image quality such as the contrast can be improved by synthesizing the detected signals by using the pattern direction or the edge strength calculated from the design data or the detected images.
摘要:
The present invention is for providing a scanning electron microscope system adapted to output contour information fitting in with the real pattern edge end of a sample, and is arranged to generate a local projection waveform by projecting the scanning electron microscope image in the tangential direction with respect to the pattern edge at each point of the pattern edge of the scanning electron microscope image, estimate the cross-sectional shape of the pattern transferred on the sample by applying the local projection waveform generated at each point to a library, which has previously been created, correlating the cross-sectional shape with the electron beam signal waveform, obtain position coordinate of the edge end fitting in with the cross-sectional shape, and output the contour of the pattern as a range of position coordinates.
摘要:
The present invention is for providing a scanning electron microscope system adapted to output contour information fitting in with the real pattern edge end of a sample, and is arranged to generate a local projection waveform by projecting the scanning electron microscope image in the tangential direction with respect to the pattern edge at each point of the pattern edge of the scanning electron microscope image, estimate the cross-sectional shape of the pattern transferred on the sample by applying the local projection waveform generated at each point to a library, which has previously been created, correlating the cross-sectional shape with the electron beam signal waveform, obtain position coordinate of the edge end fitting in with the cross-sectional shape, and output the contour of the pattern as a range of position coordinates.
摘要:
The present invention is for providing a scanning electron microscope system adapted to output contour information fitting in with the real pattern edge end of a sample, and is arranged to generate a local projection waveform by projecting the scanning electron microscope image in the tangential direction with respect to the pattern edge at each point of the pattern edge of the scanning electron microscope image, estimate the cross-sectional shape of the pattern transferred on the sample by applying the local projection waveform generated at each point to a library, which has previously been created, correlating the cross-sectional shape with the electron beam signal waveform, obtain position coordinate of the edge end fitting in with the cross-sectional shape, and output the contour of the pattern as a range of position coordinates.