公开(公告)号：US06909930B2

公开(公告)日：2005-06-21

申请号：US10124412

申请日：2002-04-18

申请人： Chie Shishido ,  Yuji Takagi ,  Masahiro Watanabe ,  Yasuhiro Yoshitake ,  Shunichi Matsumoto ,  Takashi Iizumi ,  Osamu Komuro ,  Maki Tanaka ,  Hidetoshi Morokuma

发明人： Chie Shishido ,  Yuji Takagi ,  Masahiro Watanabe ,  Yasuhiro Yoshitake ,  Shunichi Matsumoto ,  Takashi Iizumi ,  Osamu Komuro ,  Maki Tanaka ,  Hidetoshi Morokuma

IPC分类号： H01L21/00 ,  G06F19/00

CPC分类号： H01L21/67276

摘要： To realize a method for detecting variations in conditions (drift of the exposure and drift of the focus) in exposure equipment at a product wafer level in lithography process, the process is specified in such a way that calculation results of feature quantities such as electron beam images, line profiles, dimensions, etc. under various sets of the exposure and the focus are stored as a library, and an electron beam image of the product wafer is compared with these pieces of data in the library so that detection of drifts of the exposure and the focus a check of the results on the screen can easily be performed.

摘要翻译： 为了实现用于在光刻工艺中在产品晶片级的曝光设备中检测条件变化（曝光漂移和焦点偏移）的方法，以这样的方式指定特征量的计算结果，例如电子束 将各种曝光和焦点下的图像，线轮廓，尺寸等存储为库，并将产品晶片的电子束图像与库中的这些数据进行比较，以便检测到 曝光和重点检查屏幕上的结果可以很容易地执行。

公开(公告)号：US06913861B2

公开(公告)日：2005-07-05

申请号：US10370369

申请日：2003-02-18

申请人： Chie Shishido ,  Osamu Komuro ,  Hidetoshi Morokuma ,  Ryo Nakagaki ,  Maki Tanaka ,  Yuuji Takagi

发明人： Chie Shishido ,  Osamu Komuro ,  Hidetoshi Morokuma ,  Ryo Nakagaki ,  Maki Tanaka ,  Yuuji Takagi

IPC分类号： G01B15/00 ,  G03F7/20 ,  G03F7/207 ,  H01J37/28 ,  H01L21/027 ,  G03F9/00 ,  G03C5/00

CPC分类号： G03F7/70625 ,  G03F7/70641 ,  H01J37/28 ,  H01J2237/2817 ,  Y10S430/143

摘要： Size characteristic quantities are measured at a plural locations. The size characteristic quantities include edge widths, pattern widths, and/or pattern lengths of the electron-beam images of a resist-dropout pattern and a resist-remaining pattern that are located such that the effective exposure quantities differ depending on the places. With the predetermined measurement errors added thereto, the size characteristic quantities are compared with model data that has been created in advance and that causes various exposure conditions to be related with the size characteristic quantities measured under these various exposure conditions. This comparison makes it possible not only to estimate deviation quantities in the exposure quantity and the focal-point position from the correct values, but also to calculate ambiguity degrees of the estimated values. This, allows the implementation of a proper monitoring/controlling of the exposure-condition variations (i.e., the deviations in the exposure quantity and the focal-point position) in the lithography process.

摘要翻译： 在多个位置测量尺寸特征量。 尺寸特征量包括抗蚀剂落下图案和抗蚀剂剩余图案的电子束图像的边缘宽度，图案宽度和/或图案长度，其位置使得有效曝光量根据位置而不同。 随着预定的测量误差被添加到其中，将尺寸特征量与预先创建的模型数据进行比较，并使各种曝光条件与在这些各种曝光条件下测量的尺寸特征量相关。 该比较使得不仅可以从正确值估计曝光量和焦点位置中的偏差量，而且可以计算估计值的模糊度。 这允许在光刻工艺中实现曝光条件变化（即，曝光量和焦点位置的偏差）的适当监控/控制。

公开(公告)号：US07230239B2

公开(公告)日：2007-06-12

申请号：US10918381

申请日：2004-08-16

申请人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

发明人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： G06T7/0004 ,  G01N23/225 ,  G01N2223/6116 ,  G06T2207/30148 ,  H01J2237/2814 ,  H01L22/12

摘要： A system for inspecting a pattern shape operates to detect secondary electrons from a specimen by irradiation of a focused electron beam and perform arithmetic processing on this detected signal. The detected signal waveform is divided into a plurality of regions on the basis of a variation of the signal quantity. The size of the divided regions is used for quantitative evaluation of a three dimensional shape of the specimen. This system, especially by displaying measurement results of the pattern shape for each divided signal waveform (bottom width in the final shape, resist bottom width, etching shift quantity, and etching slope-angle component by the exposure), permits an easy check on which a component varies and how the component varies in all shape variations. With this arrangement, a pattern cross section information effective in determining etching process conditions can be acquired using images by an in-line SEM capable of nondestructive observation.

摘要翻译： 用于检查图案形状的系统用于通过照射聚焦电子束来检测来自样品的二次电子，并对该检测信号进行运算处理。 检测信号波形根据信号量的变化被分成多个区域。 分割区域的大小用于样本的三维形状的定量评估。 该系统特别是通过显示每个分割信号波形（最终形状的底部宽度，抗蚀剂底部宽度，蚀刻偏移量和通过曝光的蚀刻倾斜角度分量）的图案形状的测量结果，可以容易地检查哪个 一个组件变化，以及组件在所有形状变化中的变化。 通过这种布置，可以通过能够进行非破坏性观察的直列SEM的图像来获取有效确定蚀刻工艺条件的图案横截面信息。

公开(公告)号：US07173268B2

公开(公告)日：2007-02-06

申请号：US10986910

申请日：2004-11-15

申请人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

发明人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

IPC分类号： G01N21/86

CPC分类号： H01J37/28 ,  H01J37/304 ,  H01J2237/2814 ,  H01J2237/2817 ,  H01J2237/30455

摘要： This invention provides a method of measuring semiconductor pattern dimensions capable of realizing a stable and highly precise pattern dimension measurement technique even when the pattern cross-sectional shapes are changed and making the calculation amount relatively small to reduce the calculation time. More specifically, the relationship between cross-sectional shapes of a pattern and measurement errors in a specified image processing technique is evaluated in advance by the electron beam simulation in a pattern measurement system in a length measuring SEM, and in the actual dimension measurement, dimensions of an evaluation objective pattern are measured from image signals of a scanning electron microscope, and errors of the dimensional measurement of the evaluation objective pattern are estimated and revised based on the relationship between cross-sectional shapes of a pattern and measurement errors evaluated in advance, thereby realizing highly precise measurement where dimensional errors depending on pattern solid shapes are eliminated.

摘要翻译： 本发明提供一种测量半导体图案尺寸的方法，即使当图案截面形状改变并使计算量相对较小以减少计算时间时，也能够实现稳定且高度精确的图案尺寸测量技术。 更具体地说，通过长度测量SEM中的图案测量系统中的电子束模拟预先评估图案的截面形状与特定图像处理技术中的测量误差之间的关系，并且在实际尺寸测量中，尺寸 根据扫描电子显微镜的图像信号测量评价对象图案，并且基于预先评估的图案的截面形状和测量误差之间的关系来估计和修正评估对象图案的尺寸测量的误差， 从而实现高精度测量，其中取消了取决于图形实心形状的尺寸误差。

公开(公告)号：US20050116182A1

公开(公告)日：2005-06-02

申请号：US10986910

申请日：2004-11-15

申请人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

发明人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

IPC分类号： G01B15/00 ,  G01B11/14 ,  G01N23/225 ,  H01J37/28 ,  H01J37/304 ,  H01L21/66

CPC分类号： H01J37/28 ,  H01J37/304 ,  H01J2237/2814 ,  H01J2237/2817 ,  H01J2237/30455

摘要： This invention provides a method of measuring semiconductor pattern dimensions capable of realizing a stable and highly precise pattern dimension measurement technique even when the pattern cross-sectional shapes are changed and making the calculation amount relatively small to reduce the calculation time. More specifically, the relationship between cross-sectional shapes of a pattern and measurement errors in a specified image processing technique is evaluated in advance by the electron beam simulation in a pattern measurement system in a length measuring SEM, and in the actual dimension measurement, dimensions of an evaluation objective pattern are measured from image signals of a scanning electron microscope, and errors of the dimensional measurement of the evaluation objective pattern are estimated and revised based on the relationship between cross-sectional shapes of a pattern and measurement errors evaluated in advance, thereby realizing highly precise measurement where dimensional errors depending on pattern solid shapes are eliminated.

摘要翻译： 本发明提供一种测量半导体图案尺寸的方法，即使当图案截面形状改变并使计算量相对较小以减少计算时间时，也能够实现稳定且高度精确的图案尺寸测量技术。 更具体地说，通过长度测量SEM中的图案测量系统中的电子束模拟预先评估图案的截面形状与特定图像处理技术中的测量误差之间的关系，并且在实际尺寸测量中，尺寸 根据扫描电子显微镜的图像信号测量评价对象图案，并且基于预先评估的图案的截面形状和测量误差之间的关系来估计和修正评估对象图案的尺寸测量的误差， 从而实现高精度测量，其中取消了取决于图形实心形状的尺寸误差。

公开(公告)号：US20050048780A1

公开(公告)日：2005-03-03

申请号：US10918381

申请日：2004-08-16

申请人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

发明人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

IPC分类号： G01N23/225 ,  G06T7/00 ,  H01L21/302 ,  H01L21/461 ,  H01L21/66

CPC分类号： G06T7/0004 ,  G01N23/225 ,  G01N2223/6116 ,  G06T2207/30148 ,  H01J2237/2814 ,  H01L22/12

摘要： A system for inspecting a pattern shape operates to detect secondary electrons from a specimen by irradiation of a focused electron beam and perform arithmetic processing on this detected signal. The detected signal waveform is divided into a plurality of regions on the basis of a variation of the signal quantity. The size of the divided regions is used for quantitative evaluation of a three dimensional shape of the specimen. This system, especially by displaying measurement results of the pattern shape for each divided signal waveform (bottom width in the final shape, resist bottom width, etching shift quantity, and etching slope-angle component by the exposure), permits an easy check on which a component varies and how the component varies in all shape variations. With this arrangement, a pattern cross section information effective in determining etching process conditions can be acquired using images by an in-line SEM capable of nondestructive observation.

摘要翻译： 用于检查图案形状的系统用于通过照射聚焦电子束来检测来自样品的二次电子，并对该检测信号进行运算处理。 检测信号波形根据信号量的变化被分成多个区域。 分割区域的大小用于样本的三维形状的定量评估。 该系统特别是通过显示每个分割信号波形（最终形状的底部宽度，抗蚀剂底部宽度，蚀刻偏移量和通过曝光的蚀刻倾斜角度分量）的图案形状的测量结果，可以容易地检查哪个 一个组件变化，以及组件在所有形状变化中的变化。 通过这种布置，可以通过能够进行非破坏性观察的直列SEM的图像来获取有效确定蚀刻工艺条件的图案横截面信息。

公开(公告)号：US07459712B2

公开(公告)日：2008-12-02

申请号：US11657689

申请日：2007-01-25

申请人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

发明人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

IPC分类号： G01N21/86

CPC分类号： H01J37/28 ,  H01J37/304 ,  H01J2237/2814 ,  H01J2237/2817 ,  H01J2237/30455

摘要： A method of measuring pattern dimensions includes evaluating a relationship between cross-sectional shapes of a pattern and measurement errors of a pattern in a specified image processing technique, and conducting an actual measurement in which dimension measurement of an evaluation objective pattern from image signals of a microscope is carried out, and revising errors of the dimension measurement of the evaluation objective pattern based on the relationship between the cross-sectional shapes of a pattern and the measurement errors of a pattern previously evaluated.

摘要翻译： 测量图案尺寸的方法包括评估图案的横截面形状与特定图像处理技术中的图案的测量误差之间的关系，并且进行实际测量，其中评估对象图案的尺寸测量从图像信号 基于图案的截面形状与先前评估的图案的测量误差之间的关系，进行显微镜的修正，并修正评价对象图案的尺寸测量的误差。

公开(公告)号：US20070120078A1

公开(公告)日：2007-05-31

申请号：US11657689

申请日：2007-01-25

申请人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

发明人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

IPC分类号： G01N21/86 ,  G01V8/00

CPC分类号： H01J37/28 ,  H01J37/304 ,  H01J2237/2814 ,  H01J2237/2817 ,  H01J2237/30455

摘要： A method of measuring pattern dimensions includes evaluating a relationship between cross-sectional shapes of a pattern and measurement errors of a pattern in a specified image processing technique, and conducting an actual measurement in which dimension measurement of an evaluation objective pattern from image signals of a microscope is carried out, and revising errors of the dimension measurement of the evaluation objective pattern based on the relationship between the cross-sectional shapes of a pattern and the measurement errors of a pattern previously evaluated.

摘要翻译： 测量图案尺寸的方法包括评估图案的横截面形状与特定图像处理技术中的图案的测量误差之间的关系，并且进行实际测量，其中评估对象图案的尺寸测量从图像信号 基于图案的截面形状与先前评估的图案的测量误差之间的关系，进行显微镜的修正，并修正评价对象图案的尺寸测量的误差。

公开(公告)号：US06791096B2

公开(公告)日：2004-09-14

申请号：US10079855

申请日：2002-02-22

申请人： Osamu Komuro ,  Hidetoshi Morokuma ,  Chie Shishido

发明人： Osamu Komuro ,  Hidetoshi Morokuma ,  Chie Shishido

IPC分类号： G01N23225

CPC分类号： G03F7/70641 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/70625 ,  H01J37/304 ,  H01J37/3174

摘要： In order to accurately monitor changes in exposure conditions (changes in exposure level and focus) at a product wafer level during lithography, changes in exposure conditions can be calculated by acquiring electron beam images of a first pattern portion and a second pattern portion different from one another in terms of the tendency of the changes in dimensional characteristic quantities against the changes in exposure conditions, then calculating the respective dimensional characteristic quantities of the first pattern portion and the second pattern portion, and applying these dimensional characteristic quantities to the models which logically link the exposure conditions and the dimensional characteristic quantities. Hereby, it is possible to supply the process conditions change monitoring systems and methods that enable output of accurate changes in exposure level and focus.

公开(公告)号：US06791082B2

公开(公告)日：2004-09-14

申请号：US10347616

申请日：2003-01-22

申请人： Osamu Komuro ,  Hidetoshi Morokuma ,  Chie Shishido

发明人： Osamu Komuro ,  Hidetoshi Morokuma ,  Chie Shishido

IPC分类号： G01M1900

CPC分类号： G03F7/70641 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/70625 ,  H01J37/304 ,  H01J37/3174

摘要： In order to accurately monitor changes in exposure conditions (changes in exposure level and focus) at a product wafer level during lithography, changes in exposure conditions can be calculated by acquiring electron beam images of a first pattern portion and a second pattern portion different from one another in terms of the tendency of the changes in dimensional characteristic quantities against the changes in exposure conditions, then calculating the respective dimensional characteristic quantities of the first pattern portion and the second pattern portion, and applying these dimensional characteristic quantities to the models which logically link the exposure conditions and the dimensional characteristic quantities. Hereby, it is possible to supply the process conditions change monitoring systems and methods that enable output of accurate changes in exposure level and focus.

摘要翻译： 为了在光刻期间准确地监视产品晶片级的曝光条件（曝光水平和焦点的变化）的变化，可以通过获取不同于第一图案部分和第二图案部分的电子束图像来计算曝光条件的变化 另一方面，根据暴露条件变化的尺寸特征量变化的趋势，然后计算第一图案部分和第二图案部分的相应尺寸特征量，并将这些尺寸特征量应用于逻辑链接的模型 暴露条件和尺寸特征量。 因此，可以提供能够输出曝光水平和焦点的精确变化的过程条件变化监视系统和方法。