公开(公告)号：US20080174027A1

公开(公告)日：2008-07-24

申请号：US11625527

申请日：2007-01-22

申请人： Chien-Chang Fang ,  Li Te Hsu ,  Chia-Chi Chung

发明人： Chien-Chang Fang ,  Li Te Hsu ,  Chia-Chi Chung

IPC分类号： H01L23/48 ,  H01L21/00

CPC分类号： H01L23/5283 ,  H01L21/76883 ,  H01L21/76885 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a semiconductor interconnect structure formed from an original damascene or dual damascene structure. The original damascene or dual damascene structure includes a planar upper surface consisting of planar upper surfaces of conductive structures formed within openings formed in the dielectric, and planar upper surfaces of the dielectric. The original structure is processed using wet or dry etching operations which, by including ion bombardment and/or ion milling characteristics, both etch the upper dielectric surface and round the upper edges of the originally formed interconnect structures that become exposed as the dielectric is etched. Produced is an interconnect structure within an opening formed in a dielectric and which includes an upper portion that extends above the dielectric and includes opposed upper edges that are rounded.

摘要翻译： 提供由原始镶嵌或双镶嵌结构形成的半导体互连结构。 原来的镶嵌或双镶嵌结构包括一个平面的上表面，该平面上表面由形成在电介质中形成的开口内的导电结构的平面上表面和电介质的平面上表面组成。 使用湿式或干式蚀刻操作来处理原始结构，其通过包括离子轰击和/或离子研磨特性来蚀刻上电介质表面，并且绕着原始形成的互连结构的上边缘，在电介质被蚀刻时变得暴露。 产生的是在电介质中形成的开口内的互连结构，其包括在电介质上方延伸的上部，并且包括相对的上边缘，其被倒圆。

公开(公告)号：US07411245B2

公开(公告)日：2008-08-12

申请号：US11291680

申请日：2005-11-30

申请人： Chien-Chang Fang

发明人： Chien-Chang Fang

IPC分类号： H01L21/00 ,  H01L29/788

CPC分类号： H01L29/665 ,  H01L21/28052 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

摘要： A semiconductor device includes a spacer adjacent a gate structure. A protection layer covers oxide portions of the spacer surface such that subsequent manufacturing operations such as wet oxide etches and strips, do not produce voids in the spacers. A method for forming the semiconductor device provides forming a gate structure with adjacent spacers including an oxide liner beneath a nitride section, then forming the protection layer over the structure, and removing portions of the protection layer but leaving other portions of the protection layer intact to cover and protect underlying oxide portions of the spacer during subsequent processing such as the formation and removal of a resist protect oxide (RPO) layer. The protection layer is advantageously formed of a nitride film and an oxide film and produces a double spacer effect when partially removed such that only vertical sections remain.

摘要翻译： 半导体器件包括邻近栅极结构的间隔物。 保护层覆盖间隔件表面的氧化物部分，使得后续制造操作（例如湿氧化物蚀刻和条带）不会在间隔物中产生空隙。 形成半导体器件的方法提供了形成具有相邻间隔物的栅极结构，其包括氮化物部分下方的氧化物衬垫，然后在该结构上形成保护层，并且去除保护层的部分，但使保护层的其它部分保持完整， 在随后的处理（例如形成和去除抗蚀剂保护氧化物（RPO）层）中覆盖并保护间隔物的下面的氧化物部分。 保护层有利地由氮化物膜和氧化物膜形成，并且当部分去除时产生双重间隔物效应，使得仅保留垂直部分。