公开(公告)号：US09720312B2

公开(公告)日：2017-08-01

申请号：US14574371

申请日：2014-12-17

申请人： Fang-Hsuan Su ,  Chia-Chi Chung ,  Kai-Li Chen

发明人： Fang-Hsuan Su ,  Chia-Chi Chung ,  Kai-Li Chen

IPC分类号： G03B21/60 ,  G03B21/58 ,  G03B21/56

CPC分类号： G03B21/60 ,  G03B21/56 ,  G03B21/58

摘要： A projection screen includes a flexible substrate, a reflective layer and a transparent coating layer. The flexible substrate has a first surface and a second surface opposite to each other. The reflective layer is disposed on the first surface of the flexible substrate. The transparent coating layer is coated on the reflective layer, and the transparent coating layer has a pattern on a surface opposite to the reflective layer. Moreover, a manufacturing method of the projection screen is also provided.

公开(公告)号：US20080174027A1

公开(公告)日：2008-07-24

申请号：US11625527

申请日：2007-01-22

申请人： Chien-Chang Fang ,  Li Te Hsu ,  Chia-Chi Chung

发明人： Chien-Chang Fang ,  Li Te Hsu ,  Chia-Chi Chung

IPC分类号： H01L23/48 ,  H01L21/00

CPC分类号： H01L23/5283 ,  H01L21/76883 ,  H01L21/76885 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a semiconductor interconnect structure formed from an original damascene or dual damascene structure. The original damascene or dual damascene structure includes a planar upper surface consisting of planar upper surfaces of conductive structures formed within openings formed in the dielectric, and planar upper surfaces of the dielectric. The original structure is processed using wet or dry etching operations which, by including ion bombardment and/or ion milling characteristics, both etch the upper dielectric surface and round the upper edges of the originally formed interconnect structures that become exposed as the dielectric is etched. Produced is an interconnect structure within an opening formed in a dielectric and which includes an upper portion that extends above the dielectric and includes opposed upper edges that are rounded.

摘要翻译： 提供由原始镶嵌或双镶嵌结构形成的半导体互连结构。 原来的镶嵌或双镶嵌结构包括一个平面的上表面，该平面上表面由形成在电介质中形成的开口内的导电结构的平面上表面和电介质的平面上表面组成。 使用湿式或干式蚀刻操作来处理原始结构，其通过包括离子轰击和/或离子研磨特性来蚀刻上电介质表面，并且绕着原始形成的互连结构的上边缘，在电介质被蚀刻时变得暴露。 产生的是在电介质中形成的开口内的互连结构，其包括在电介质上方延伸的上部，并且包括相对的上边缘，其被倒圆。

公开(公告)号：US20060286792A1

公开(公告)日：2006-12-21

申请号：US11157002

申请日：2005-06-20

申请人： Chia-Chi Chung ,  H. Tsai

发明人： Chia-Chi Chung ,  H. Tsai

IPC分类号： H01L21/4763

CPC分类号： H01L21/76808

摘要： A dual damascene process for fabricating a semiconductor device. A dielectric layer is formed on a substrate, comprising at least one via opening therein. A trench opening is formed in the dielectric layer above the via opening and the via opening widened by in-situ etching.

摘要翻译： 用于制造半导体器件的双镶嵌工艺。 介电层形成在基片上，其中至少有一个通孔。 在通孔开口上方的电介质层中形成沟槽开口，并通过原位蚀刻加宽通孔孔。

公开(公告)号：US06791190B1

公开(公告)日：2004-09-14

申请号：US10434751

申请日：2003-05-09

申请人： Chia Chi Chung

发明人： Chia Chi Chung

IPC分类号： H01L2942

CPC分类号： H01L21/76897

摘要： A method for forming a self-aligned contact (SAC)/borderless contact opening includes forming a shallow trench isolation (STI) structure in a substrate to define an active area. A gate structure including a cap layer is formed. The gate structure is formed on the substrate and oriented perpendicular to the STI structure and the active area. An oxide spacer is formed on at least one of the sidewalls of the gate structure. A conformal liner layer is formed on the substrate covering the gate structure, the oxide spacer, and the STI structure. An inter-layer dielectric (ILD) layer is formed on the substrate covering the liner layer. The ILD layer is patterned and etched to define a SAC/borderless contact opening. A SAC/borderless contact opening structure also is described.

摘要翻译： 用于形成自对准接触（SAC）/无边界接触开口的方法包括在衬底中形成浅沟槽隔离（STI）结构以限定有源区。 形成包括盖层的栅极结构。 栅极结构形成在基板上并且垂直于STI结构和有源区域定向。 在栅极结构的至少一个侧壁上形成氧化物间隔物。 在覆盖栅极结构，氧化物间隔物和STI结构的基板上形成共形衬垫层。 在覆盖衬里层的衬底上形成层间介电层（ILD）层。 图案化并蚀刻ILD层以限定SAC /无边界接触开口。 还描述了SAC /无边界接触开口结构。

公开(公告)号：US20160004150A1

公开(公告)日：2016-01-07

申请号：US14574371

申请日：2014-12-17

申请人： Fang-Hsuan Su ,  Chia-Chi Chung ,  Kai-Li Chen

发明人： Fang-Hsuan Su ,  Chia-Chi Chung ,  Kai-Li Chen

IPC分类号： G03B21/60 ,  G03B21/58

CPC分类号： G03B21/60 ,  G03B21/56 ,  G03B21/58

摘要： A projection screen includes a flexible substrate, a reflective layer and a transparent coating layer. The flexible substrate has a first surface and a second surface opposite to each other. The reflective layer is disposed on the first surface of the flexible substrate. The transparent coating layer is coated on the reflective layer, and the transparent coating layer has a pattern on a surface opposite to the reflective layer. Moreover, a manufacturing method of the projection screen is also provided.

摘要翻译： 投影屏幕包括柔性基板，反射层和透明涂层。 柔性基板具有彼此相对的第一表面和第二表面。 反射层设置在柔性基板的第一表面上。 透明涂层涂覆在反射层上，透明涂层在与反射层相反的表面上具有图案。 此外，还提供了投影屏幕的制造方法。

公开(公告)号：US08523396B2

公开(公告)日：2013-09-03

申请号：US13212203

申请日：2011-08-18

申请人： Chia-Chi Chung

发明人： Chia-Chi Chung

IPC分类号： F21V33/00

CPC分类号： G03B21/2033 ,  F21Y2101/00 ,  G03B21/2086

摘要： A device housing includes first and second cases, a first magnetically sensitive positioning pin, and a first compressible member. The first case has a first protruding block having a first positioning hole. The second case has a first groove having a second positioning hole. When the first protruding block is disposed in the first groove, the first positioning hole is aligned with the second positioning hole. The first magnetically sensitive positioning pin runs through the first and second positioning holes to position the second case on the first case. The first compressible member is disposed in the first positioning hole and between an inner wall of the first positioning hole and the first magnetically sensitive positioning pin. When a first magnetic force acts on the first magnetically sensitive positioning pin, the first magnetically sensitive positioning pin compresses the first compressible member and moves away from the second positioning hole.

摘要翻译： 装置壳体包括第一和第二壳体，第一磁敏定位销和第一可压缩构件。 第一壳体具有第一突出块，其具有第一定位孔。 第二壳体具有第一凹槽，具有第二定位孔。 当第一突出块设置在第一槽中时，第一定位孔与第二定位孔对准。 第一磁敏定位销穿过第一和第二定位孔，以将第二壳体定位在第一壳体上。 第一可压缩构件设置在第一定位孔中并且位于第一定位孔的内壁和第一磁敏定位销之间。 当第一磁力作用在第一磁敏定位销上时，第一磁敏定位销压缩第一可压缩构件并远离第二定位孔移动。

公开(公告)号：US20120133252A1

公开(公告)日：2012-05-31

申请号：US13212203

申请日：2011-08-18

申请人： Chia-Chi Chung

发明人： Chia-Chi Chung

IPC分类号： G03B21/14

CPC分类号： G03B21/2033 ,  F21Y2101/00 ,  G03B21/2086

摘要： A device housing includes first and second cases, a first magnetically sensitive positioning pin, and a first compressible member. The first case has a first protruding block having a first positioning hole. The second case has a first groove having a second positioning hole. When the first protruding block is disposed in the first groove, the first positioning hole is aligned with the second positioning hole. The first magnetically sensitive positioning pin runs through the first and second positioning holes to position the second case on the first case. The first compressible member is disposed in the first positioning hole and between an inner wall of the first positioning hole and the first magnetically sensitive positioning pin. When a first magnetic force acts on the first magnetically sensitive positioning pin, the first magnetically sensitive positioning pin compresses the first compressible member and moves away from the second positioning hole.

摘要翻译： 装置壳体包括第一和第二壳体，第一磁敏定位销和第一可压缩构件。 第一壳体具有第一突出块，其具有第一定位孔。 第二壳体具有第一凹槽，具有第二定位孔。 当第一突出块设置在第一槽中时，第一定位孔与第二定位孔对准。 第一磁敏定位销穿过第一和第二定位孔，以将第二壳体定位在第一壳体上。 第一可压缩构件设置在第一定位孔中并且位于第一定位孔的内壁和第一磁敏定位销之间。 当第一磁力作用在第一磁敏定位销上时，第一磁敏定位销压缩第一可压缩构件并远离第二定位孔移动。

公开(公告)号：US08124537B2

公开(公告)日：2012-02-28

申请号：US12029834

申请日：2008-02-12

申请人： Chun-Hung Lee ,  Chia-Chi Chung ,  Hsin-Chih Chen ,  Jeff J. Xu ,  Neng-Kuo Chen

发明人： Chun-Hung Lee ,  Chia-Chi Chung ,  Hsin-Chih Chen ,  Jeff J. Xu ,  Neng-Kuo Chen

IPC分类号： H01L21/311 ,  H01L21/302 ,  H01L21/461 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC分类号： H01L21/31144 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/32139

摘要： A method is disclosed for etching an integrated circuit structure within a trench. A layer to be etched is applied over the structure and within the trench. A CF-based polymer is deposited over the layer to be etched followed by deposition of a capping layer of SiOCl-based polymer. The CF-based polymer reduces the width of the trench to such an extent that little or no SiOCl-based polymer is deposited at the bottom of the trench. An O2 plasma etch is performed to etch through the CF-based polymer at the bottom of the trench. The O2 plasma etch has little effect on the SiOCl-based polymer, the thus the upper surfaces of the structure remain covered with polymer. Thus, these upper surfaces remain fully protected during subsequent etching of the layer to be etched.

摘要翻译： 公开了一种用于蚀刻沟槽内的集成电路结构的方法。 待蚀刻的层被施加在结构之上和沟槽内。 将CF基聚合物沉积在待蚀刻的层上，随后沉积SiOCl基聚合物的覆盖层。 基于CF的聚合物将沟槽的宽度减小到在沟槽底部沉积少量或不存在SiOCl基聚合物的程度。 执行O2等离子体蚀刻以在沟槽的底部蚀刻通过CF基聚合物。 O2等离子体蚀刻对SiOCl基聚合物几乎没有影响，因此结构的上表面保持被聚合物覆盖。 因此，在随后蚀刻待蚀刻的层期间，这些上表面保持完全保护。

公开(公告)号：US20090035902A1

公开(公告)日：2009-02-05

申请号：US11831031

申请日：2007-07-31

申请人： Jeff J. Xu ,  Anthony Yen ,  Chia-Ta Hsieh ,  Chia-Chi Chung ,  Cheng-Ming Lin

发明人： Jeff J. Xu ,  Anthony Yen ,  Chia-Ta Hsieh ,  Chia-Chi Chung ,  Cheng-Ming Lin

IPC分类号： H01L21/336

CPC分类号： H01L21/823468 ,  H01L27/105 ,  H01L27/1052

摘要： Provided is a method of fabricating a memory device. A substrate including an array region and a peripheral region is provided. A first feature and a second feature are formed in the array region. The first feature and the second feature have a first pitch. A plurality of spacers abutting each of the first feature and the second feature are formed. The plurality of spacers have a second pitch. A third feature in the peripheral region and a fourth and fifth feature in the array region are formed concurrently. The forth and fifth feature have the second pitch.

摘要翻译： 提供一种制造存储器件的方法。 提供了包括阵列区域和外围区域的基板。 第一特征和第二特征形成在阵列区域中。 第一特征和第二特征具有第一音调。 形成邻接第一特征和第二特征的多个间隔件。 多个间隔件具有第二间距。 外围区域的第三特征和阵列区域中的第四和第五特征同时形成。 第四和第五特征具有第二音调。

公开(公告)号：US07993018B2

公开(公告)日：2011-08-09

申请号：US12369343

申请日：2009-02-11

申请人： Cheng-Kuei Chen ,  Chia-Chi Chung

发明人： Cheng-Kuei Chen ,  Chia-Chi Chung

IPC分类号： G03B21/20

CPC分类号： G03B21/16 ,  G03B21/2053 ,  G03B21/208

摘要： A light amount adjusting component adapted a projection optical system is provided. The light amount adjusting component has a light incident surface upon which a light beam impinges, and the light incident surface is provided with a surface structure for irregularly dispersing the light beam. A slot that permits the light beam to pass therethrough and enter a light-receiving element is formed on the light amount adjusting component, and a width of the slot changes along an extension direction of the slot to allow control of the amount of the light beam entering the light-receiving element when the light amount adjusting component moves or rotates.

摘要翻译： 提供了适用于投影光学系统的光量调节部件。 光量调节部件具有光入射面，光入射面入射面，光入射面设有用于不规则地分散光束的表面结构。 允许光束通过并进入光接收元件的槽形成在光量调节部件上，并且槽的宽度沿着槽的延伸方向变化，以允许控制光束的量 当光量调节组件移动或旋转时进入光接收元件。