CAPACITOR STRUCTURE AND FABRICATING METHOD THEREOF
    1.
    发明申请
    CAPACITOR STRUCTURE AND FABRICATING METHOD THEREOF 审中-公开
    电容结构及其制作方法

    公开(公告)号:US20140061855A1

    公开(公告)日:2014-03-06

    申请号:US13605983

    申请日:2012-09-06

    IPC分类号: H01L29/92 H01L21/02

    摘要: A capacitor structure includes a first conductive structure, a dielectric structure, a first capacitor electrode, a capacitor dielectric layer, and a second capacitor electrode. The first conductive structure is disposed over a substrate. The dielectric structure is disposed over the substrate and partially enclosing the first conductive structure. The dielectric structure has a trench. A first surface of the first conductive structure is exposed through the trench of the dielectric structure. The first capacitor electrode is disposed on a bottom and a sidewall of the trench. The first capacitor electrode is electrically contacted with the first surface of the first conductive structure. The capacitor dielectric layer is disposed on a surface of the first capacitor electrode. The second capacitor electrode is disposed on a surface of the capacitor dielectric layer and filled in the trench.

    摘要翻译: 电容器结构包括第一导电结构,电介质结构,第一电容器电极,电容器电介质层和第二电容器电极。 第一导电结构设置在衬底上。 电介质结构设置在衬底上并部分地包围第一导电结构。 电介质结构具有沟槽。 第一导电结构的第一表面通过电介质结构的沟槽暴露。 第一电容器电极设置在沟槽的底部和侧壁上。 第一电容器电极与第一导电结构的第一表面电接触。 电容器电介质层设置在第一电容器电极的表面上。 第二电容器电极设置在电容器介电层的表面上并填充在沟槽中。