公开(公告)号：US20130187225A1

公开(公告)日：2013-07-25

申请号：US13354439

申请日：2012-01-20

申请人： Chih-Chung WANG ,  Ming-Tsung Lee ,  Chung-I Huang ,  Shan-Shi Huang ,  Wen-Fang Lee ,  Te-Yuan Wu

发明人： Chih-Chung WANG ,  Ming-Tsung Lee ,  Chung-I Huang ,  Shan-Shi Huang ,  Wen-Fang Lee ,  Te-Yuan Wu

IPC分类号： H01L29/78

CPC分类号： H01L29/0878 ,  H01L21/266 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/402 ,  H01L29/404 ,  H01L29/66681 ,  H01L29/7816

摘要： A HV MOSFET device includes a substrate, a deep well region, a source/body region, a drain region, a gate structure, and a first doped region. The deep well region includes a boundary site and a middle site. The source/body region is formed in the deep well region and defines a channel region. The first doped region is formed in the deep well region and disposed under the gate structure, and having the first conductivity type. There is a first ratio between a dopant dose of the first doped region and a dopant dose of the boundary site of the deep well region. There is a second ratio between a dopant dose of the first doped region and a dopant dose of the middle site of the deep well region. A percentage difference between the first ratio and the second ratio is smaller than or equal to 5%.

摘要翻译： HV MOSFET器件包括衬底，深阱区，源极/主体区，漏极区，栅极结构和第一掺杂区。 深井区域包括边界站点和中间站点。 源/体区域形成在深阱区域中并且限定沟道区域。 第一掺杂区域形成在深阱区域中并且设置在栅极结构下方并且具有第一导电类型。 在第一掺杂区域的掺杂剂剂量和深阱区域的边界位点的掺杂剂剂量之间存在第一比率。 在第一掺杂区域的掺杂剂剂量和深井区域的中间位点的掺杂剂剂量之间存在第二比率。 第一比率和第二比率之间的百分比差小于或等于5％。