Finger device capable of grasping objects
    1.
    发明申请
    Finger device capable of grasping objects 审中-公开
    手指装置能够抓住物体

    公开(公告)号:US20060145495A1

    公开(公告)日:2006-07-06

    申请号:US11313675

    申请日:2005-12-22

    IPC分类号: B25J15/08

    CPC分类号: B25J15/0009

    摘要: A finger device for grasping objects is disclosed, which comprises multiple base members and a driving belt. Each base member comprises a main body, a first axle defined in the main body, a second axle defined in the main body, an elastic member and a binding member. The binding member is used for connecting the neighboring main bodies for continuous motion. The elastic member also connects the neighboring main bodies for changing or recovering the relative positions of the main bodies. The first axle and the second axle of one base member are located along a different line from the first axle of another base member, and the driving belt is used for connecting to the first axle and the second axle of each base member. Therefore, as the driving belt is pulled, the relative positions of the main bodies change and the finger device bends.

    摘要翻译: 公开了一种用于抓握物体的手指装置,其包括多个基座构件和驱动带。 每个基座构件包括主体,限定在主体中的第一轴,限定在主体中的第二轴,弹性构件和装订构件。 装订构件用于连接邻近的主体用于连续运动。 弹性构件还连接相邻的主体,用于改变或恢复主体的相对位置。 一个基座构件的第一轴和第二轴沿着与另一基座构件的第一轴不同的线定位,并且驱动带用于连接到每个基座构件的第一轴和第二轴。 因此,当驱动带被拉动时,主体的相对位置改变,手指装置弯曲。

    WELL-THROUGH TYPE DIODE ELEMENT/COMPONENT AND MANUFACTURING METHOD FOR THEM
    2.
    发明申请
    WELL-THROUGH TYPE DIODE ELEMENT/COMPONENT AND MANUFACTURING METHOD FOR THEM 有权
    良好的二极管元件/组件及其制造方法

    公开(公告)号:US20130241056A1

    公开(公告)日:2013-09-19

    申请号:US13418452

    申请日:2012-03-13

    IPC分类号: H01L29/861 H01L21/329

    摘要: A well-through type diode element/component manufacturing method which has a pair (pairs) of first and said second electrodes of a diode element/component built on same plane by a process of metallization after a mode of well-through type to penetrate a PN junction depletion region/barrier region, and leads electrons of one of the electrodes to flow through the Depletion/Barrier region without hindrance; the present invention directly conduct the operations of insulation protecting, metallization and the process of elongate welding ball etc., it can independently complete a novel technique of Chip-Scale Package (CSP); it has the features of: grains being exactly the article produced, no need of connecting lines, low energy consumption, low cost and light, thin and small etc.

    摘要翻译: 一种通孔型二极管元件/元件制造方法,其具有通过在穿透型之后的金属化工艺在同一平面上构建的二极管元件/部件的一对(成对)第一和第二电极,以穿透 PN结耗尽区域/势垒区域,并且引导电极之一的电子不受阻碍地流过耗尽/屏障区域; 本发明直接进行绝缘保护,金属化和细长焊球等工艺,可以独立完成芯片级封装(CSP)的新技术; 它具有以下特点:谷物正好是产品生产,不需要连线,能耗低,成本低,重量轻,薄而小。

    Well-through type diode element/component and manufacturing method for them
    3.
    发明授权
    Well-through type diode element/component and manufacturing method for them 有权
    通孔型二极管元件/元件及其制造方法

    公开(公告)号:US08791551B2

    公开(公告)日:2014-07-29

    申请号:US13418452

    申请日:2012-03-13

    摘要: A well-through type diode element/component manufacturing method which has a pair (pairs) of first and said second electrodes of a diode element/component built on same plane by a process of metallization after a mode of well-through type to penetrate a PN junction depletion region/barrier region, and leads electrons of one of the electrodes to flow through the Depletion/Barrier region without hindrance; the present invention directly conduct the operations of insulation protecting, metallization and the process of elongate welding ball etc., it can independently complete a novel technique of Chip-Scale Package (CSP); it has the features of: grains being exactly the article produced, no need of connecting lines, low energy consumption, low cost and light, thin and small etc.

    摘要翻译: 一种通孔型二极管元件/元件制造方法,其具有通过在穿透型之后的金属化工艺在同一平面上构建的二极管元件/部件的一对(成对)第一和第二电极,以穿透 PN结耗尽区域/势垒区域,并且引导电极之一的电子不受阻碍地流过耗尽/屏障区域; 本发明直接进行绝缘保护,金属化和细长焊球等工艺,可以独立完成芯片级封装(CSP)的新技术; 它具有以下特点:谷物正好是产品生产,不需要连线,能耗低,成本低,重量轻,薄而小。