公开(公告)号：US08251541B2

公开(公告)日：2012-08-28

申请号：US12731535

申请日：2010-03-25

Applicant: Chin-Lung Lin

Inventor： Chin-Lung Lin

IPC: F21S4/00

CPC classification number: F21V23/02 ,  F21S4/28 ,  F21V15/01 ,  F21V15/013 ,  F21V15/015 ,  F21V21/025 ,  F21V23/026 ,  F21V31/005 ,  F21V31/04 ,  F21Y2103/10 ,  F21Y2107/20 ,  F21Y2115/10

Abstract: A tubeless light-emitting diode (LED) based lighting device includes at least one base, at least one LED lighting module, and at least one control circuit. The base includes a heat dissipation body. The LED lighting module is mounted to the base so that the base provides the LED lighting module with the functions of retention and heat dissipation. The control circuit is mounted to the base and is electrically connected to power wiring of the LED lighting module for ON/OFF switching of the LED lighting module and supplying of operation power. As such, a tubeless lighting device that emits light in a power saving manner and is constructed in a volume reduced manner is provided.

Abstract translation: 基于无内燃发光二极管（LED）的照明装置包括至少一个基座，至少一个LED照明模块和至少一个控制电路。 基座包括散热体。 LED照明模块安装在基座上，使得LED照明模块具有保持和散热的功能。 控制电路安装在基座上，电连接到LED照明模块的电源线，用于LED照明模块的ON / OFF切换和供电操作。 因此，提供了以省电方式发光并且以体积减小的方式构造的无内胎照明装置。

公开(公告)号：US20070015088A1

公开(公告)日：2007-01-18

申请号：US11160923

申请日：2005-07-15

Applicant: Chin-Lung Lin

Inventor： Chin-Lung Lin

IPC: G03C5/00 ,  G03F1/00

CPC classification number: G03F7/70425 ,  G03F1/36 ,  G03F1/70

Abstract: A mask pattern including a group of small-pitched contact hole features with pitch being less than a predetermined value and isolated contact hole features with pitch being greater than the predetermined value is provided. The mask pattern is split into two sub-mask patterns, one having about half of the group of the small-pitched contact hole features and about half of the isolated contact hole features, the other having the rest of the group of the small-pitched contact hole features and the rest of the isolated contact hole features. Two phase shifting masks are formed, each phase shifting mask comprising one of the two sub-mask patterns and dummy features disposed in proximity to each of the contact hole features. Successively, each of the two phase shifting masks is positioned above the substrate. Each phase shifting mask is exposed successively on a photosensitive layer on the substrate.

Abstract translation: 提供一种掩模图案，其包括一组具有小于预定值的小间距接触孔特征，并且具有间距大于预定值的隔离接触孔特征。 掩模图案被分成两个子掩模图案，一个具有小组接触孔特征的一半的大约一半和隔离接触孔特征的大约一半，另一个具有小间距的组的其余部分 接触孔特征和其余的隔离接触孔特征。 形成两个相移掩模，每个相移掩模包括两个子掩模图案中的一个和设置在每个接触孔特征附近的虚拟特征。 接着，两个相移掩模中的每一个位于衬底上方。 每个相移掩模在基片上的感光层上连续曝光。

公开(公告)号：US07116815B2

公开(公告)日：2006-10-03

申请号：US10435566

申请日：2003-05-09

Applicant: Ming-Jui Chen ,  Chin-Lung Lin

Inventor： Ming-Jui Chen ,  Chin-Lung Lin

IPC: G06K9/00

CPC classification number: G06T7/0004 ,  G01N21/95607

Abstract: A chrome-less mask inspection method is provided. The chrome-less mask at least includes a transparent region and a phase shift region. The method includes providing a database having a mask database corresponding to the chrome-less mask. The mask database further includes a frame line pattern having enclosed area and pattern that corresponds to enclosed area and pattern of the phase shift region of the chrome-less mask and a first inspection signal pattern generated by the mask database. An inspecting device is also provided to inspect a second inspection signal pattern from the chrome-less mask. Furthermore, scanning location of the second inspection signal pattern corresponds with scanning location of the first inspection signal pattern. Thereafter, the first inspection signal pattern and the second inspection signal pattern is compared and any differences are registered.

Abstract translation: 提供无铬掩模检查方法。 无铬掩模至少包括透明区域和相移区域。 该方法包括提供具有对应于无铬掩模的掩模数据库的数据库。 掩模数据库还包括具有与无铬掩模的相移区域的封闭区域和图案对应的封闭区域和图案的框线图案以及由掩模数据库生成的第一检查信号图案。 还提供检查装置以从无铬掩模检查第二检查信号图案。 此外，第二检查信号图案的扫描位置对应于第一检查信号图案的扫描位置。 此后，比较第一检查信号图案和第二检查信号图案，并记录任何差异。

公开(公告)号：US06576486B2

公开(公告)日：2003-06-10

申请号：US09767307

申请日：2001-01-23

Applicant: Chin-Lung Lin

Inventor： Chin-Lung Lin

IPC: H01L2166

CPC classification number: G03F1/36

Abstract: An unlanded process for manufacturing semiconductor circuits. Optical proximity correction of the electrical connection region of a conductive line is carried out to increase the area so that alignment accuracy between the conductive line and a via/contact improves. Optical proximity correction of the photomask for forming a conductive line pattern is carried out by first determining the electrical connection regions in the conductive line pattern. The regions are expanded equi-directionally or extended outward direction along the edges of the conductive line to form magnified regions. Overlapping regions between the original conductive line pattern and the magnified regions, regions outside the conductive line pattern as well as regions too close to neighboring conductive line pattern are removed. The final magnified regions and the original conductive line pattern are combined to obtain an optical proximity corrected photomask.

公开(公告)号：US6165693A

公开(公告)日：2000-12-26

申请号：US135434

申请日：1998-08-17

Applicant: Chin-Lung Lin ,  Yao-Ching Ku

Inventor： Chin-Lung Lin ,  Yao-Ching Ku

IPC: G03F1/00 ,  G03C5/00

CPC classification number: G03F1/36

Abstract: For a dense-line mask pattern, if the ratio of space width to line width is larger than 2.0 and the size of the line width is less than the exposure wave length, or for an iso-line mask pattern, if the size of the line width is less than the exposure wave length, assist features should be added and OAI should be used to increase the process window. For a dense-line mask pattern, if the ratio of space width to line width is smaller than 2.0, or for an iso-line mask pattern, if the size of the line width is larger than the exposure wavelength, no assist feature should be added.

Abstract translation: 对于密集线掩模图案，如果空间宽度与线宽的比率大于2.0，并且线宽的尺寸小于曝光波长，或者对于等线掩模图案，如果尺寸 线宽小于曝光波长，应添加辅助功能，并应使用OAI增加工艺窗口。 对于密集线掩模图案，如果空间宽度与线宽的比率小于2.0，或者对于等线掩模图案，如果线宽的大小大于曝光波长，则不应该有辅助特征 添加。

公开(公告)号：US6120953A

公开(公告)日：2000-09-19

申请号：US298324

申请日：1999-04-23

Applicant: Chin-Lung Lin

Inventor： Chin-Lung Lin

IPC: G03F1/00 ,  G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70441 ,  G03F1/36

Abstract: A method of optical proximity correction. A main pattern is provided. The main pattern has a critical dimension. When the critical dimension is reduced to reach a first reference value or below, a serif/hammerhead is added onto the main pattern. When the critical dimension is further reduced to a second reference value or below, an assist feature is added onto the main pattern. The corrected pattern is then transferred to a layer on wafer with an improved fidelity.

Abstract translation: 一种光学邻近校正方法。 提供了主要模式。 主要模式有一个关键的维度。 当临界尺寸减小到达第一个参考值或更低时，将一个衬片/锤头添加到主图案上。 当临界尺寸进一步减小到第二参考值或更低时，辅助特征被添加到主图案上。 然后将校正的图案以改进的保真度转移到晶片上的层。

公开(公告)号：US5667919A

公开(公告)日：1997-09-16

申请号：US682458

申请日：1996-07-17

Applicant: Chih-Chiang Tu ,  Jon-Yiew Gan ,  Tai-Bor Wu ,  Chin-Lung Lin

Inventor： Chih-Chiang Tu ,  Jon-Yiew Gan ,  Tai-Bor Wu ,  Chin-Lung Lin

IPC: G03F1/00 ,  G03F1/32 ,  G03F9/00

CPC classification number: G03F1/32 ,  Y10T428/24868

Abstract: An attenuated Phase Shift Mask (PSM) blank and an attenuated Phase Shift Mask (PSM), and a method by which the attenuated Phase Shift Mask (PSM) blank and the attenuated Phase Shift Mask (PSM) may be formed. To form the attenuated Phase Shift Mask (PSM) blank there is first provided a transparent substrate. Formed upon the transparent substrate is a tantalum-silicon oxide blanket semi-transparent shifter layer which has the formula,Ta.sub.x Si.sub.y O.sub.1-x-ywherein 0.1

Abstract translation: 衰减相移掩模（PSM）空白和衰减的相移掩模（PSM），以及可以形成衰减的相移掩模（PSM）空白和衰减的相移掩模（PSM）的方法。 为了形成衰减相移掩模（PSM）空白，首先提供透明衬底。 形成在透明基板上的是具有以下分子式的钽 - 氧化硅覆盖层半透明移动层：在0.1

公开(公告)号：US20090001596A1

公开(公告)日：2009-01-01

申请号：US12211079

申请日：2008-09-15

Applicant: Chin-Lung Lin ,  Yun-Sheng Huang ,  Hung-Chin Thuang ,  Chien-Fu Lee

Inventor： Chin-Lung Lin ,  Yun-Sheng Huang ,  Hung-Chin Thuang ,  Chien-Fu Lee

IPC: H01L23/48

CPC classification number: G03F1/36

Abstract: A conductive line structure is defined with an OPC photomask and is suitably applied to a semiconductor device. The conductive line structure includes a first conductive line and a second conductive line. The first conductive line includes a first line body oriented in the X-direction of a plane coordinate system, a first end portion at one end of the first line body slanting toward the Y-direction of the plane coordinate system, and a second end portion at the other end of the first line body also slanting toward the Y-direction. The second conductive line arranged in an end-to-end manner with the first conductive line includes a second line body oriented in the X-direction, a third end portion at one end of the second line body slanting toward the Y-direction, and a fourth end portion at the other end of the second line body also slanting toward the Y-direction.

Abstract translation: 导电线结构由OPC光掩模限定，适用于半导体器件。 导线结构包括第一导线和第二导线。 第一导线包括沿着平面坐标系的X方向定向的第一线体，第一线体的一端朝向平面坐标系的Y方向倾斜的第一端部，以及第二端部 在第一线体的另一端也向Y方向倾斜。 与第一导线以端对端的方式布置的第二导线包括沿X方向定向的第二线体，在第二线体的一端朝向Y方向倾斜的第三端部，以及 第二线体的另一端的第四端部也向Y方向倾斜。

公开(公告)号：US07008732B2

公开(公告)日：2006-03-07

申请号：US10457978

申请日：2003-06-09

Applicant: Chin-Lung Lin ,  Chuen-Huei Yang ,  Wen-Tien Hung

Inventor： Chin-Lung Lin ,  Chuen-Huei Yang ,  Wen-Tien Hung

IPC: G03F9/00

CPC classification number: G03F1/36 ,  G03F1/26

Abstract: A photomask pattern on a substrate is provided. The photomask pattern comprises a main pattern and a sub-resolution assistant feature. The sub-resolution assistant feature is located on the sides of the main pattern. Furthermore, the sub-resolution assistant feature comprises a first assistant feature and a second assistant feature. The first assistant feature is formed close to the main pattern and the second assistant feature is formed further away from the main pattern but adjacent to the first assistant feature. There is a phase difference of 180° between the first assistant feature and the main pattern. Similarly, there is a phase difference of 180° between the second assistant feature and the first assistant feature. Since the main pattern is bordered by reverse-phase assistant feature, exposure resolution of the photomask is increased.

Abstract translation: 提供了基板上的光掩模图案。 光掩模图案包括主图案和子分辨率辅助特征。 子分辨率辅助功能位于主图案的两侧。 此外，子分辨率辅助特征包括第一辅助特征和第二辅助特征。 第一辅助功能形成在主模式附近，第二辅助功能远离主模式形成，但与第一辅助功能相邻。 第一辅助特征与主图案之间存在180°的相位差。 类似地，在第二辅助特征和第一辅助特征之间存在180°的相位差。 由于主图案由反相辅助功能界定，因此增加了光掩模的曝光分辨率。

公开(公告)号：US20050100829A1

公开(公告)日：2005-05-12

申请号：US10605968

申请日：2003-11-10

Applicant: Chin-Lung Lin ,  Chuen Huei Yang ,  Ming-Jui Chen ,  Venson Lee

Inventor： Chin-Lung Lin ,  Chuen Huei Yang ,  Ming-Jui Chen ,  Venson Lee

IPC: G03F1/00 ,  G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70283 ,  G03F1/34

Abstract: A lithography method for forming a plurality of patterns in a photoresist layer. A phase shift mask including a plurality of transparent main features, a plurality of first phase shift transparent regions, and a plurality of second phase shift transparent regions is provided. Each transparent main feature is surrounded by the first phase shift transparent regions and the second phase shift transparent regions interlaced contiguously along a periphery of the transparent main feature. Each of the first phase shift transparent regions has a phase shift relative to each of the second phase shift transparent regions. An exposure process is performed to irradiate the phase shift mask with light so that the patterns corresponding to the transparent main features are formed in the photoresist layer.

Abstract translation: 一种用于在光致抗蚀剂层中形成多个图案的光刻方法。 提供了包括多个透明主要特征，多个第一相移透明区域和多个第二相移透明区域的相移掩模。 每个透明主要特征被第一相移透明区域包围，而第二相移透明区域沿着透明主要特征的周边连续交错。 第一相移透明区域中的每一个相对于第二相移透明区域中的每一个具有相移。 执行曝光处理以用光照射相移掩模，使得在光致抗蚀剂层中形成对应于透明主要特征的图案。