公开(公告)号：US20070105052A1

公开(公告)日：2007-05-10

申请号：US11404861

申请日：2006-04-17

申请人： Chin-Shan Chang ,  Wen-Chun Wang ,  Fa-Chen Wu

发明人： Chin-Shan Chang ,  Wen-Chun Wang ,  Fa-Chen Wu

IPC分类号： G03F7/26

CPC分类号： H01L27/1288 ,  G03F7/0007 ,  H01L27/1214 ,  H01L27/1255

摘要： A thin film transistor liquid array substrate includes forming a plurality of amorphous silicon thin film transistors and storage capacities on a transparent substrate, wherein the amorphous silicon thin film transistors and the storage capacities are arranged in an array pattern. The storage capacitor has a top electrode and a bottom electrode, which are made of transparent conductive material to increase aperture ratio. A method of making the amorphous silicon thin film transistors and the storage capacities includes four photomask processes and a back exposure technique. Because the present invention only uses four photomask processes, the number of photomasks used in the process of the present invention is less than the conventional method, and the cost of fabrication is lower also.

摘要翻译： 薄膜晶体管液晶阵列基板包括在透明基板上形成多个非晶硅薄膜晶体管和存储容量，其中非晶硅薄膜晶体管和存储容量排列成阵列图案。 存储电容器具有顶部电极和底部电极，其由透明导电材料制成以增加开口率。 制造非晶硅薄膜晶体管和存储容量的方法包括四个光掩模处理和背面曝光技术。 由于本发明仅使用四个光掩模工艺，所以在本发明的方法中使用的光掩模的数量少于常规方法，制造成本也较低。

公开(公告)号：US07588881B2

公开(公告)日：2009-09-15

申请号：US11404861

申请日：2006-04-17

申请人： Chin-Shan Chang ,  Wen-Chun Wang ,  Fa-Chen Wu

发明人： Chin-Shan Chang ,  Wen-Chun Wang ,  Fa-Chen Wu

IPC分类号： H01L21/00 ,  G01F7/00

CPC分类号： H01L27/1288 ,  G03F7/0007 ,  H01L27/1214 ,  H01L27/1255

摘要： A thin film transistor liquid array substrate includes forming a plurality of amorphous silicon thin film transistors and storage capacities on a transparent substrate, wherein the amorphous silicon thin film transistors and the storage capacities are arranged in an array pattern. The storage capacitor has a top electrode and a bottom electrode, which are made of transparent conductive material to increase aperture ratio. A method of making the amorphous silicon thin film transistors and the storage capacities includes four photomask processes and a back exposure technique. Because the present invention only uses four photomask processes, the number of photomasks used in the process of the present invention is less than the conventional method, and the cost of fabrication is lower also.

摘要翻译： 薄膜晶体管液晶阵列基板包括在透明基板上形成多个非晶硅薄膜晶体管和存储容量，其中非晶硅薄膜晶体管和存储容量排列成阵列图案。 存储电容器具有顶部电极和底部电极，其由透明导电材料制成以增加开口率。 制造非晶硅薄膜晶体管和存储容量的方法包括四个光掩模处理和背面曝光技术。 由于本发明仅使用四个光掩模工艺，所以在本发明的方法中使用的光掩模的数量少于常规方法，制造成本也较低。