公开(公告)号：US08440476B2

公开(公告)日：2013-05-14

申请号：US12882430

申请日：2010-09-15

申请人： Chizu Kyotani ,  Naochika Horio

发明人： Chizu Kyotani ,  Naochika Horio

IPC分类号： H01L21/00

CPC分类号： H01L33/40 ,  H01L33/0083 ,  H01L33/0095

摘要： The ohmic contact between a growth substrate and an electrode formed thereon is improved in a zinc oxide-based semiconductor light-emitting device, thereby improving the light-emission efficiency and reliability A step for forming an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer in sequence on a first principal face of a substrate having a composition of MgxZn1-xO (0≦x≦0.68); a step for forming microcracks in a second principal face of the substrate so as to extend toward an interior of the substrate; a step for carrying out a heat treatment at a temperature of 100° C. or higher; and a step for forming an electrode by depositing a metal material composed of one among Al, a Ga alloy, and an In alloy on the second principal face of the substrate, and forming an electrode in a heat treatment at a temperature of 300° C. to 1000° C. are provided.

摘要翻译： 在氧化锌系半导体发光元件中，生长基板与形成在其上的电极之间的欧姆接触得到改善，从而提高了发光效率和可靠性。形成n型半导体层，发光 层和p型半导体层，其顺序在具有Mg x Zn 1-x O（0 @ x @ 0.68）组成的衬底的第一主面上; 在衬底的第二主面中形成微裂纹以朝向衬底的内部延伸的步骤; 在100℃以上的温度进行热处理的工序; 以及通过在基板的第二主面上沉积由Al，Ga合金和In合金中的一种构成的金属材料形成电极的步骤，并且在300℃的温度下进行热处理中形成电极 提供至1000℃。

公开(公告)号：US08232121B2

公开(公告)日：2012-07-31

申请号：US12556914

申请日：2009-09-10

申请人： Chizu Kyotani ,  Naochika Horio

发明人： Chizu Kyotani ,  Naochika Horio

IPC分类号： H01L21/00 ,  H01L29/12

CPC分类号： H01L33/0095 ,  H01L33/0083 ,  H01L33/20

摘要： A semiconductor device that has excellent characteristics and mass productivity wherein the introduction of defects thereinto at the time of device separation is prevented, and a method for producing the semiconductor device. In particular, there is provided a high-performance semiconductor device having excellent luminous efficiency, longevity and mass productivity; and a method for producing this semiconductor device. The method for producing the semiconductor device has a step of forming, between a substrate comprising zinc oxide (ZnO) and a device operating layer, a defect-blocking layer having a crystal composition that is different from that of the substrate, and a step of forming device dividing grooves to a depth that goes beyond the defect-blocking layer, relative to the device operating layer side surface of the substrate on which the device operating layer is formed.

摘要翻译： 具有优异特性和质量生产率的半导体器件，其中防止在器件分离时引入缺陷，以及制造半导体器件的方法。 特别地，提供了具有优异的发光效率，寿命和批量生产率的高性能半导体器件; 以及该半导体装置的制造方法。 制造半导体器件的方法具有在包含氧化锌（ZnO）和器件工作层的衬底之间形成具有不同于衬底的晶体组成的缺陷阻挡层的步骤，以及 相对于其上形成有器件工作层的衬底的器件工作层侧表面，将器件分割槽形成为超过缺陷阻挡层的深度。