公开(公告)号：US20160126289A1

公开(公告)日：2016-05-05

申请号：US14795882

申请日：2015-07-09

申请人： Choong-jae LEE ,  Hong-kook MIN ,  Bo-young SEO ,  Aliaksei IVANIUKOVICH ,  Yong-kyu LEE

发明人： Choong-jae LEE ,  Hong-kook MIN ,  Bo-young SEO ,  Aliaksei IVANIUKOVICH ,  Yong-kyu LEE

IPC分类号： H01L27/22 ,  H01L29/08 ,  H01L29/78 ,  H01L43/02

CPC分类号： H01L27/228 ,  H01L29/1045 ,  H01L29/7833 ,  H01L29/7835 ,  H01L43/08

摘要： A semiconductor device comprises a magneto-resistive device capable of performing multiple functions with low power. The semiconductor device comprises a cell transistor in which a first impurity region and a second impurity region are respectively arranged on both sides of a channel region in a channel direction, a source line connected to the first impurity region of the cell transistor, and the magneto-resistive device connected to the second impurity region of the cell transistor. The first impurity region and the second impurity region are asymmetrical about a center of the cell transistor in the channel direction with respect to at least one of a shape and an impurity concentration distribution.

摘要翻译： 半导体器件包括能够以低功率执行多个功能的磁阻器件。 半导体器件包括单元晶体管，其中第一杂质区域和第二杂质区域分别布置在沟道方向上的沟道区域的两侧，连接到单元晶体管的第一杂质区域的源极线和磁体 电阻器件连接到单元晶体管的第二杂质区域。 相对于形状和杂质浓度分布中的至少一种，第一杂质区域和第二杂质区域围绕单元晶体管的沟道方向的中心不对称。