公开(公告)号：US06319644B2

公开(公告)日：2001-11-20

申请号：US09780407

申请日：2001-02-12

申请人： Christophe Pierrat ,  James E. Burdorf ,  William Baggenstoss ,  William Stanton

发明人： Christophe Pierrat ,  James E. Burdorf ,  William Baggenstoss ,  William Stanton

IPC分类号： G03F900

CPC分类号： G03F1/36 ,  G03F7/70441

摘要： Methods of reducing proximity effects in lithographic processes wherein an integrated circuitry pattern is transferred from a mask onto a semiconductor substrate are described. In one embodiment, a desired spacing is defined between a main feature which is to reside on a mask and which is to be transferred onto the substrate, and an adjacent proximity effects-correcting feature. After the spacing definition, the dimensions of the main feature are adjusted relative to the proximity effects-correcting feature to achieve a desired transferred main feature dimension. In another embodiment, a desired spacing is defined between a main feature having an edge and an adjacent sub-resolution feature. The edge of the main feature is moved relative to the sub-resolution feature to achieve a desired transferred main feature dimension.

公开(公告)号：US06284419B1

公开(公告)日：2001-09-04

申请号：US09769603

申请日：2001-01-24

申请人： Christophe Pierrat ,  James E. Burdorf ,  William Baggenstoss ,  William Stanton

发明人： Christophe Pierrat ,  James E. Burdorf ,  William Baggenstoss ,  William Stanton

IPC分类号： G03F900

摘要： Methods of reducing proximity effects in lithographic processes wherein an integrated circuitry pattern is transferred from a mask onto a semiconductor substrate are described. In one embodiment, a desired spacing is defined between a main feature which is to reside on a mask and which is to be transferred onto the substrate, and an adjacent proximity effects-correcting feature. After the spacing definition, the dimensions of the main feature are adjusted relative to the proximity effects-correcting feature to achieve a desired transferred main feature dimension. In another embodiment, a desired spacing is defined between a main feature having an edge and an adjacent sub-resolution feature. The edge of the main feature is moved relative to the sub-resolution feature to achieve a desired transferred main feature dimension.

公开(公告)号：US06120952A

公开(公告)日：2000-09-19

申请号：US164786

申请日：1998-10-01

申请人： Christophe Pierrat ,  James E. Burdorf ,  William Baggenstoss ,  William Stanton

发明人： Christophe Pierrat ,  James E. Burdorf ,  William Baggenstoss ,  William Stanton

IPC分类号： G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F1/36 ,  G03F7/70441

摘要： Methods of reducing proximity effects in lithographic processes wherein an integrated circuitry pattern is transferred from a mask onto a semiconductor substrate are described. In one embodiment, a desired spacing is defined between a main feature which is to reside on a mask and which is to be transferred onto the substrate, and an adjacent proximity effects-correcting feature. After the spacing definition, the dimensions of the main feature are adjusted relative to the proximity effects-correcting feature to achieve a desired transferred main feature dimension. In another embodiment, a desired spacing is defined between a main feature having an edge and an adjacent sub-resolution feature. The edge of the main feature is moved relative to the sub-resolution feature to achieve a desired transferred main feature dimension.

摘要翻译： 描述了将集成电路图案从掩模转印到半导体衬底上的平版印刷工艺中的邻近效应的降低方法。 在一个实施例中，期望的间隔被定义在要驻留在掩模上并且要被转印到基板上的主要特征之间，以及相邻的邻近效应校正特征之间。 在间隔定义之后，相对于邻近效应校正特征调整主要特征的尺寸以实现期望的转移的主要特征维度。 在另一个实施例中，在具有边缘的主要特征和相邻的子分辨率特征之间限定期望的间隔。 主要特征的边缘相对于子分辨率特征移动以实现所需的传送主要特征维度。