公开(公告)号：US20060205172A1

公开(公告)日：2006-09-14

申请号：US11076268

申请日：2005-03-09

申请人： Christopher Gerlach ,  David Ender ,  Dennis Vogel

发明人： Christopher Gerlach ,  David Ender ,  Dennis Vogel

IPC分类号： H01L21/76

CPC分类号： C07D333/28 ,  B82Y30/00 ,  C08G61/126 ,  H01L51/0036

摘要： Semiconductor devices are described that include a semiconductor layer that comprises a perfluoroether acyl oligothiophene compound, preferably an α,ω-bis-perfluoroether acyl oligothiophene compound. Additionally, methods of making semiconductor devices are described that include depositing a semiconductor layer that contains a perfluoroether acyl oligothiophene compound, preferably an α,ω-bis(2-perfluoroether acyl oligothiophene compound.

摘要翻译： 描述了半导体器件，其包括包含全氟醚酰基低聚噻吩化合物，优选α，ω-双 - 全氟醚酰基低聚噻吩化合物的半导体层。 此外，描述了制造半导体器件的方法，其包括沉积含有全氟醚酰基低聚噻吩化合物，优选α，ω-双（2-全氟醚酰基低聚噻吩化合物）的半导体层。

公开(公告)号：US20060202191A1

公开(公告)日：2006-09-14

申请号：US11075978

申请日：2005-03-09

申请人： Christopher Gerlach ,  David Ender ,  Dennis Vogel

发明人： Christopher Gerlach ,  David Ender ,  Dennis Vogel

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC分类号： H01L51/0068 ,  B82Y30/00 ,  H01L51/0036 ,  H01L51/0529 ,  H01L51/0545

摘要： Semiconductor devices are described that include a semiconductor layer that comprises a perfluoroether acyl oligothiophene compound, preferably an α,ω-bis-perfluoroether acyl oligothiophene compound. Additionally, methods of making semiconductor devices are described that include depositing a semiconductor layer that contains a perfluoroether acyl oligothiophene compound, preferably an α,ω-bis(2-perfluoroether acyl oligothiophene compound.

摘要翻译： 描述了半导体器件，其包括包含全氟醚酰基低聚噻吩化合物，优选α，ω-双 - 全氟醚酰基低聚噻吩化合物的半导体层。 此外，描述了制造半导体器件的方法，其包括沉积包含全氟醚酰基低聚噻吩化合物，优选α，ω-双（2-全氟醚酰基低聚噻吩化合物）的半导体层。