METHOD FOR IMPLANTING A PIEZOELECTRIC MATERIAL
    2.
    发明申请
    METHOD FOR IMPLANTING A PIEZOELECTRIC MATERIAL 有权
    压电材料的方法

    公开(公告)号:US20130111719A1

    公开(公告)日:2013-05-09

    申请号:US13808703

    申请日:2011-07-05

    IPC分类号: H01L41/22

    摘要: A method of producing a structure made of a piezoelectric material, including: a) production of a stack including at least one metal layer and at least one conductive layer on a substrate made of piezoelectric material, wherein at least one electrical contact is established between the conductive layer and a metal element outside the stack; b) an ionic and/or atomic implantation, through the conductive layer and the metal layer; c) transfer of the substrate onto a transfer substrate, followed by fracturing of the transferred piezoelectric substrate, in an embrittlement area.

    摘要翻译: 一种制造由压电材料制成的结构的方法,包括:a)在由压电材料制成的基板上制造包括至少一个金属层和至少一个导电层的叠层,其中在 导电层和堆叠外的金属元件; b)通过导电层和金属层的离子和/或原子注入; c)将基板转移到转印基板上,随后在脆化区域中压印转印的压电基板。

    DATA STORAGE MEDIUM AND ASSOCIATED METHOD
    3.
    发明申请
    DATA STORAGE MEDIUM AND ASSOCIATED METHOD 有权
    数据存储介质及相关方法

    公开(公告)号:US20090161405A1

    公开(公告)日:2009-06-25

    申请号:US12338281

    申请日:2008-12-18

    IPC分类号: G11C11/22 H01L21/02

    摘要: A data storage medium includesa carrier substrate having an electrode layer on the surface,and a sensitive material layer extending along the electrode layer, the volume whereof is adapted to be locally modified between two electrical states by the action of a localized electric field.A reference plane extends globally parallel to the sensitive material layerand is configured to pass along it at least one element for application of an electrostatic field in combination with the electrode layer. The storage medium also includes, parallel to the reference plane, a plurality of conductive portions forming part of the electrode layer and separated by at least one electrically insulative zone, the electrically conductive portions having, in at least one direction parallel to the reference plane, a dimension at most equal to 100 nm, where at least some of the conductive portions are electrically interconnected, the conductive portions defining data write/read locations within the sensitive material layer.

    摘要翻译: 数据存储介质包括在表面上具有电极层的载体衬底和沿着电极层延伸的敏感材料层,其体积适于通过局部电场的作用在两个电气状态之间局部改变。 参考平面全局平行于敏感材料层延伸,并被配置为沿着至少一个元件传递静电场与电极层的组合。 存储介质还包括平行于参考平面的多个导电部分,其形成电极层的一部分并由至少一个电绝缘区隔开,导电部分在平行于参考平面的至少一个方向上具有, 至多等于100nm的尺寸,其中至少一些导电部分电互连,导电部分在敏感材料层内定义数据写入/读取位置。

    Data storage medium and associated method
    4.
    发明授权
    Data storage medium and associated method 有权
    数据存储介质及相关方法

    公开(公告)号:US08445122B2

    公开(公告)日:2013-05-21

    申请号:US12338281

    申请日:2008-12-18

    IPC分类号: G11C11/22 H01L21/02

    摘要: A data storage medium includes a carrier substrate having an electrode layer on the surface thereof and a sensitive material layer extending along the electrode layeradapted to be locally modified between two electrical states by the action of a localized electric field. A reference plane extends globally parallel to the sensitive material layer and is configured to accommodate at least one element for application of an electrostatic field in combination with the electrode layer the electrode layer including a plurality of conductive portions having a dimension at most equal to 100 nm in at least one direction parallel to the reference plane and separated by at least one electrically insulative zone, where at least some of the conductive portions are electrically interconnected, the conductive portions defining data write/read locations within the sensitive material layer.

    摘要翻译: 数据存储介质包括其表面上具有电极层的载体衬底和沿着电极层延伸的敏感材料层,所述敏感材料层通过局部电场的作用被局部地改变为两个电气状态。 参考平面全局平行于敏感材料层延伸,并且被配置为容纳用于与电极层组合施加静电场的至少一个元件,该电极层包括具有至多等于100nm的尺寸的多个导电部分 在平行于参考平面的至少一个方向上并且由至少一个电绝缘区隔开,其中至少一些导电部分电互连,导电部分在敏感材料层内限定数据写/读位置。

    METHOD OF TRANSFER BY MEANS OF A FERROELECTRIC SUBSTRATE
    5.
    发明申请
    METHOD OF TRANSFER BY MEANS OF A FERROELECTRIC SUBSTRATE 有权
    通过微电子基板传输的方法

    公开(公告)号:US20110104829A1

    公开(公告)日:2011-05-05

    申请号:US12936582

    申请日:2009-04-03

    IPC分类号: H01L43/12

    摘要: A method of carrying out a transfer of one or more first components or of a first layer onto a second substrate including: a) application and maintaining, by electrostatic effect, of the one or more first components or of the first layer, on a first substrate, made of a ferroelectric material, electrically charged, b) placing in contact, direct or by molecular adhesion, and transfer of the components or the layer onto a second substrate, and c) dismantling of the first substrate, leaving at least one part of the components or the layer on the second substrate.

    摘要翻译: 一种执行将一个或多个第一部件或第一层转移到第二基板上的方法,包括:a)通过静电效应将一个或多个第一部件或第一层施加并保持在第一 基板,由铁电材料制成,带电,b)直接或通过分子粘附接触,并将部件或层转移到第二基板上,以及c)拆除第一基板,留下至少一个部分 的第二基板上的部件或层。

    Method of transfer by means of a ferroelectric substrate
    6.
    发明授权
    Method of transfer by means of a ferroelectric substrate 有权
    通过铁电衬底转移的方法

    公开(公告)号:US08951809B2

    公开(公告)日:2015-02-10

    申请号:US12936582

    申请日:2009-04-03

    IPC分类号: H01L21/00 H01L21/18

    摘要: A method of carrying out a transfer of one or more first components or of a first layer onto a second substrate including: a) application and maintaining, by electrostatic effect, of the one or more first components or of the first layer, on a first substrate, made of a ferroelectric material, electrically charged, b) placing in contact, direct or by molecular adhesion, and transfer of the components or the layer onto a second substrate, and c) dismantling of the first substrate, leaving at least one part of the components or the layer on the second substrate.

    摘要翻译: 一种执行将一个或多个第一部件或第一层转移到第二基板上的方法,包括:a)通过静电效应将一个或多个第一部件或第一层施加并保持在第一 基板,由铁电材料制成,带电,b)直接或通过分子粘附接触,并将部件或层转移到第二基板上,以及c)拆除第一基板,留下至少一个部分 的第二基板上的部件或层。