公开(公告)号：US20190036509A1

公开(公告)日：2019-01-31

申请号：US16135655

申请日：2018-09-19

申请人： NGK INSULATORS, LTD.

发明人： Tomoyoshi TAI ,  Masashi GOTO ,  Yudai UNO ,  Shinya KANEKO

IPC分类号： H03H9/02 ,  H01L41/09 ,  H01L41/187 ,  H01L41/313 ,  H01L41/337 ,  H03H3/08 ,  H03H9/25

CPC分类号： H03H9/02574 ,  H01L41/09 ,  H01L41/187 ,  H01L41/313 ,  H01L41/337 ,  H03H3/08 ,  H03H9/02559 ,  H03H9/02622 ,  H03H9/25

摘要： A bonded body includes a supporting body composed of a ceramic, a bonding layer provided over a surface of the supporting body and composed of one or more material selected from the group consisting of mullite, alumina, tantalum pentoxide, titanium oxide and niobium pentoxide, and a piezoelectric single crystal substrate bonded with the bonding layer. The surface of the supporting body has an arithmetic average roughness Ra of 0.5 nm or larger and 5.0 nm or smaller.

公开(公告)号：US10035388B2

公开(公告)日：2018-07-31

申请号：US15460293

申请日：2017-03-16

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Mayumi Yamaguchi ,  Konami Izumi ,  Fuminori Tateishi

IPC分类号： H01L21/00 ,  H01L21/30 ,  H01L21/46 ,  B60C23/04 ,  B60C23/20 ,  B81C1/00 ,  H01L41/25 ,  H01L27/20 ,  H01L41/311 ,  H01L41/313

CPC分类号： B60C23/0493 ,  A61B5/02444 ,  A61B5/681 ,  B60C23/04 ,  B60C23/0408 ,  B60C23/0411 ,  B60C23/0413 ,  B60C23/20 ,  B81C1/0023 ,  G01L1/16 ,  G01L17/00 ,  H01L21/02118 ,  H01L21/02175 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/54 ,  H01L24/93 ,  H01L27/20 ,  H01L35/34 ,  H01L41/25 ,  H01L41/311 ,  H01L41/313 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  Y10T29/42 ,  H01L2924/00

摘要： The present invention provides a MEMS and a sensor having the MEMS which can be formed without a process of etching a sacrifice layer. The MEMS and the sensor having the MEMS are formed by forming an interspace using a spacer layer. In the MEMS in which an interspace is formed using a spacer layer, a process for forming a sacrifice layer and an etching process of the sacrifice layer are not required. As a result, there is no restriction on the etching time, and thus the yield can be improved.

公开(公告)号：US20180159502A1

公开(公告)日：2018-06-07

申请号：US15828616

申请日：2017-12-01

申请人： SKYWORKS SOLUTIONS, INC.

发明人： Atsushi Takano

IPC分类号： H03H9/10 ,  H03H3/02 ,  H03H9/17 ,  H03H9/05 ,  H01L41/313 ,  H01L41/337 ,  H01L41/338 ,  H01L23/00

CPC分类号： H03H9/1035 ,  B23K1/0016 ,  B23K20/16 ,  B23K26/382 ,  B23K26/402 ,  B23K2101/36 ,  B23K2101/42 ,  B23K2103/172 ,  H01L21/187 ,  H01L24/83 ,  H01L24/94 ,  H01L25/0657 ,  H01L41/313 ,  H01L41/337 ,  H01L41/338 ,  H01L2224/83096 ,  H01L2224/8312 ,  H01L2224/83825 ,  H01L2924/01029 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01079 ,  H03H3/02 ,  H03H9/0523 ,  H03H9/17 ,  H03H9/171 ,  H03H9/173 ,  H03H9/175 ,  H03H9/706 ,  H03H2003/021

摘要： Methods of preventing water from penetrating inside a pair of bonded wafers that are bonded to one another during manufacture of an electronic device. A method is provided for manufacturing an electronic device including a first substrate having a first side wall of a certain height formed along a periphery to surround an electronic circuit disposed on a bottom surface and a second substrate having a second side wall of a certain height formed along a periphery on a top surface, the second side wall being aligned and bonded with the first side wall. The method includes forming the first side wall on a bottom surface of a first wafer as the bottom surface of the first substrate and forming a first sealing portion of a certain height along a periphery; forming the second side wall on a top surface of a second wafer as the top surface of the second substrate and forming a second sealing portion of a certain height along a periphery; and aligning and bonding the first wafer and the second wafer with each other, the first sealing portion and the first side wall being bonded with the second sealing portion and the second side wall respectively by transient liquid phase bonding.

公开(公告)号：US20180159493A1

公开(公告)日：2018-06-07

申请号：US15828625

申请日：2017-12-01

申请人： SKYWORKS SOLUTIONS, INC.

发明人： Atsushi Takano

IPC分类号： H03H3/02 ,  B23K20/16

CPC分类号： H03H9/1035 ,  B23K1/0016 ,  B23K20/16 ,  B23K26/382 ,  B23K26/402 ,  B23K2101/36 ,  B23K2101/42 ,  B23K2103/172 ,  H01L21/187 ,  H01L24/83 ,  H01L24/94 ,  H01L25/0657 ,  H01L41/313 ,  H01L41/337 ,  H01L41/338 ,  H01L2224/83096 ,  H01L2224/8312 ,  H01L2224/83825 ,  H01L2924/01029 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01079 ,  H03H3/02 ,  H03H9/0523 ,  H03H9/17 ,  H03H9/171 ,  H03H9/173 ,  H03H9/175 ,  H03H9/706 ,  H03H2003/021

摘要： Methods of manufacturing an electronic device formed in a cavity may include providing a first substrate having a first side wall including a first metal formed along a periphery on a bottom surface thereof and surrounding an electronic circuit disposed on the bottom surface, providing a second substrate having a second side wall including a second metal and a third metal formed along a periphery on a top surface thereof, aligning the first substrate with the second substrate with the first side wall opposing and contacting the second side wall to internally define a cavity between the bottom surface of the first substrate, the top surface of the second substrate, the first side wall ,and the second side wall, and heating and bonding the first substrate and the second substrate by transient liquid phase bonding.

公开(公告)号：US20180069526A1

公开(公告)日：2018-03-08

申请号：US15686621

申请日：2017-08-25

申请人： TAIYO YUDEN CO., LTD.

发明人： Takashi YAMASHITA

IPC分类号： H03H9/05 ,  H01L41/313 ,  H03H9/25 ,  H01L41/187 ,  H03H3/08 ,  H01L41/053

CPC分类号： H03H9/059 ,  H01L41/047 ,  H01L41/0533 ,  H01L41/1873 ,  H01L41/313 ,  H01L2224/16225 ,  H01L2924/15174 ,  H03H3/08 ,  H03H9/25 ,  H03H9/6483

摘要： An acoustic wave device includes: a mounting substrate; a first wiring layer located on an upper surface of the mounting substrate, the first wiring layer including a first bond region and a first connection region connecting with the first bond region and having a thickness substantially equal to a thickness of the first bond region; an element substrate mounted on the mounting substrate; an acoustic wave element located on a lower surface of the element substrate; and a second wiring layer located on the lower surface of the element substrate, the second wiring layer including a second bond region and a second connection region, the second bond region directly bonding with the first bond region of the first wiring layer, the second connection region connecting the acoustic wave element with the second bond region and having a thickness substantially equal to a thickness of the second bond region.

公开(公告)号：US09842982B2

公开(公告)日：2017-12-12

申请号：US14531475

申请日：2014-11-03

申请人： Océ-Technologies B.V.

发明人： Johannes L. M. Caris ,  Johannes T. M. Hermans ,  Robert N. J. Jacobs ,  Peter J. M. Janssen

IPC分类号： H01L41/053 ,  H01L41/09 ,  B41J2/14 ,  B41J2/16 ,  H01L41/23 ,  H01L41/31 ,  H01L41/313 ,  H01L41/047 ,  H01L41/083

CPC分类号： H01L41/09 ,  B41J2/14209 ,  B41J2/14233 ,  B41J2/14274 ,  B41J2/1609 ,  B41J2/1623 ,  B41J2/1632 ,  B41J2002/14217 ,  B41J2002/14491 ,  H01L41/047 ,  H01L41/0475 ,  H01L41/083 ,  H01L41/23 ,  H01L41/31 ,  H01L41/313 ,  Y10T29/42

摘要： A piezoelectric actuator array includes a substrate plate with a number of signal leads and at least one common lead, and a number of piezoelectric bodies arranged in a row on one surface of the substrate plate and formed by dividing a common piezoelectric block. The piezoelectric bodies include a number of active bodies each of which has, on a first side of the row, a signal electrode in contact with one of the signal leads and, on an opposite second side of the row, a common electrode in contact with the common lead. The substrate plate has at least one connector lead disposed on the first side of the row and electrically connected to the common lead on the second side of the row. At least one piezoelectric body has a conductive outer surface layer that establishes an electrically conductive path from the connector lead to the common lead.

公开(公告)号：US20170345993A1

公开(公告)日：2017-11-30

申请号：US15599474

申请日：2017-05-19

申请人： NIHON DEMPA KOGYO CO., LTD.

发明人： KENICHI KIKUCHI

IPC分类号： H01L41/09 ,  H01L41/18 ,  H01L41/08 ,  H01L41/313 ,  H01L41/047

CPC分类号： H01L41/0913 ,  H01L41/0477 ,  H01L41/0815 ,  H01L41/18 ,  H01L41/313 ,  H03H9/0509 ,  H03H9/0533 ,  H03H9/1021 ,  H03H9/17

摘要： A piezoelectric device includes a piezoelectric vibrating piece, a base, a wire, a conductive adhesive, and a buffer layer. The piezoelectric vibrating piece includes excitation electrodes and extraction electrodes at both principal surfaces. The base includes the piezoelectric vibrating piece and a first wiring electrode and a second wiring electrode connected to the extraction electrodes. The wire connects the extraction electrode on a surface opposite to a side of the base among the extraction electrodes to one wiring electrode of the first wiring electrode and the second wiring electrode. The conductive adhesive connects the extraction electrode at the base side among the extraction electrodes to the other wiring electrode among the first wiring electrode and the second wiring electrode. The buffer layer reduces stress of the wire between the extraction electrode to which the wire is connected and the piezoelectric vibrating piece.

公开(公告)号：US09590170B2

公开(公告)日：2017-03-07

申请号：US13942951

申请日：2013-07-16

申请人： TAIYO YUDEN CO., LTD.

发明人： Yohei Shimizu

IPC分类号： H01L41/313 ,  H01L41/338 ,  H03H3/08

CPC分类号： H01L41/313 ,  H01L41/338 ,  H03H3/08 ,  Y10T156/1052

摘要： A method of fabricating an acoustic wave device includes: bonding a support substrate to a piezoelectric substrate on which an IDT is to be formed; forming a modified region in the support substrate by irradiation of a laser beam; and cutting the support substrate and the piezoelectric substrate in the modified region, wherein a distance from a boundary face between the support substrate and the piezoelectric substrate to an edge portion of the modified region at the boundary face side is greater than or equal to 20 μm and less than 69 μm.

摘要翻译： 制造声波器件的方法包括：将支撑衬底接合到要在其上形成IDT的压电衬底; 通过激光束的照射在支撑基板上形成改质区域; 并且在所述改质区域中切割所述支撑基板和所述压电基板，其中，从所述支撑基板与所述压电基板之间的边界面到所述边界面侧的所述改质区域的边缘部的距离大于或等于20μm 小于69μm。

公开(公告)号：US20170059378A1

公开(公告)日：2017-03-02

申请号：US15338604

申请日：2016-10-31

申请人： HONDA ELECTRONICS CO., LTD.

发明人： Kenji NAGAREDA ,  Yuki MURAI ,  Atsuhiro HAYASHI ,  Yuichi MAIDA

IPC分类号： G01F1/66 ,  H01L41/187 ,  H01L41/09 ,  H01L41/113 ,  H01L41/08 ,  H01L41/083

CPC分类号： G01F1/662 ,  B06B1/0644 ,  B06B1/0651 ,  B06B1/067 ,  G01F1/667 ,  H01L41/0825 ,  H01L41/083 ,  H01L41/09 ,  H01L41/1132 ,  H01L41/187 ,  H01L41/1873 ,  H01L41/29 ,  H01L41/313 ,  Y10T29/42

摘要： An electromechanical transformation device for an ultrasonic flow meter comprises an alkaline niobate piezoelectric ceramic composition and a rigid body adhered onto the major surface of the ceramic composition. The ceramic composition is made of crystal structures such as orthorhombic crystals formed at the side where the temperature is lower than the orthorhombic-to-tetragonal phase transition temperature, tetragonal crystals formed at the side where temperature is higher that the orthorhombic-to-tetragonal phase transition temperature as well as at the side where the temperature is lower than the tetragonal-to-cubic phase transition temperature, and the cubic crystals formed at the side where the temperature is higher than the tetragonal-to-cubic phase temperature. Young's modulus of the rigid is 60 GPa or more. THe volume percent of the ceramic composition existing within a range where the distance from the adhesion point of the piezoelectric ceramic composition and the rigid body is 40% or more.

摘要翻译： 用于超声波流量计的机电转换装置包括碱性铌酸盐压电陶瓷组合物和粘附在陶瓷组合物的主表面上的刚体。 该陶瓷组合物由温度低于正交至四方相转变温度的一侧形成的正交晶体等晶体结构构成，在正方形相对于四方相的温度高的一侧形成四方晶体 转变温度以及温度低于四方晶相立方相温度的一侧，以及形成在温度高于四方相立方相温度的一侧的立方晶体。 刚性的杨氏模量为60GPa以上。 陶瓷组合物的体积百分比存在于距离压电陶瓷组合物和刚性体的粘合点的距离在40％以上的范围内。

公开(公告)号：US09577178B2

公开(公告)日：2017-02-21

申请号：US14164318

申请日：2014-01-27

申请人： Murata Manufacturing Co., Ltd.

发明人： Takashi Iwamoto

IPC分类号： H03H9/02 ,  H01L41/047 ,  H01L41/312 ,  H01L41/08 ,  H01L41/313 ,  H03H3/04 ,  H03H3/10 ,  H03H3/02

CPC分类号： H01L41/0477 ,  H01L41/0815 ,  H01L41/297 ,  H01L41/312 ,  H01L41/313 ,  H03H3/04 ,  H03H3/10 ,  H03H9/02574 ,  H03H2003/023 ,  H03H2003/0407 ,  Y10T29/42

摘要： A piezoelectric device that prevents defects due to pyroelectric charge without limiting how the piezoelectric device can be used includes a first metal layer located on a bonding surface of a piezoelectric single crystal substrate. A second metal layer is located on a bonding surface of a support substrate. The first and second metal layers are overlaid on each other to define a metal bonded layer. Subsequently, by oxidizing the metal bonded layer, a semi-conducting layer is formed.

摘要翻译： 防止由于热电荷引起的缺陷而不限制如何使用压电器件的压电器件包括位于压电单晶衬底的接合表面上的第一金属层。 第二金属层位于支撑基板的接合面上。 第一和第二金属层彼此重叠以限定金属键合层。 随后，通过氧化金属接合层，形成半导体层。