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公开(公告)号：US08445122B2
公开(公告)日：2013-05-21
申请号：US12338281
申请日：2008-12-18
CPC分类号： G11B9/02 , B82Y10/00 , G11B5/743 , G11B9/1472 , G11B9/149 , Y10T428/115
摘要： A data storage medium includes a carrier substrate having an electrode layer on the surface thereof and a sensitive material layer extending along the electrode layeradapted to be locally modified between two electrical states by the action of a localized electric field. A reference plane extends globally parallel to the sensitive material layer and is configured to accommodate at least one element for application of an electrostatic field in combination with the electrode layer the electrode layer including a plurality of conductive portions having a dimension at most equal to 100 nm in at least one direction parallel to the reference plane and separated by at least one electrically insulative zone, where at least some of the conductive portions are electrically interconnected, the conductive portions defining data write/read locations within the sensitive material layer.
摘要翻译： 数据存储介质包括其表面上具有电极层的载体衬底和沿着电极层延伸的敏感材料层，所述敏感材料层通过局部电场的作用被局部地改变为两个电气状态。 参考平面全局平行于敏感材料层延伸，并且被配置为容纳用于与电极层组合施加静电场的至少一个元件，该电极层包括具有至多等于100nm的尺寸的多个导电部分 在平行于参考平面的至少一个方向上并且由至少一个电绝缘区隔开，其中至少一些导电部分电互连，导电部分在敏感材料层内限定数据写/读位置。
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公开(公告)号：US20090161405A1
公开(公告)日：2009-06-25
申请号：US12338281
申请日：2008-12-18
CPC分类号： G11B9/02 , B82Y10/00 , G11B5/743 , G11B9/1472 , G11B9/149 , Y10T428/115
摘要： A data storage medium includesa carrier substrate having an electrode layer on the surface,and a sensitive material layer extending along the electrode layer, the volume whereof is adapted to be locally modified between two electrical states by the action of a localized electric field.A reference plane extends globally parallel to the sensitive material layerand is configured to pass along it at least one element for application of an electrostatic field in combination with the electrode layer. The storage medium also includes, parallel to the reference plane, a plurality of conductive portions forming part of the electrode layer and separated by at least one electrically insulative zone, the electrically conductive portions having, in at least one direction parallel to the reference plane, a dimension at most equal to 100 nm, where at least some of the conductive portions are electrically interconnected, the conductive portions defining data write/read locations within the sensitive material layer.
摘要翻译： 数据存储介质包括在表面上具有电极层的载体衬底和沿着电极层延伸的敏感材料层，其体积适于通过局部电场的作用在两个电气状态之间局部改变。 参考平面全局平行于敏感材料层延伸，并被配置为沿着至少一个元件传递静电场与电极层的组合。 存储介质还包括平行于参考平面的多个导电部分，其形成电极层的一部分并由至少一个电绝缘区隔开，导电部分在平行于参考平面的至少一个方向上具有， 至多等于100nm的尺寸，其中至少一些导电部分电互连，导电部分在敏感材料层内定义数据写入/读取位置。
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3.发明申请METHOD OF PRODUCING A HYBRID SUBSTRATE BY PARTIAL RECRYSTALLIZATION OF A MIXED LAYER 有权通过混合层的部分再结晶生产混合基材的方法公开(公告)号：US20100221891A1
公开(公告)日：2010-09-02
申请号：US12705039
申请日：2010-02-12
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： A method of producing a hybrid substrate includes preparing a monocrystalline first substrate to obtain two surface portions. A temporary substrate is prepared including a mixed layer along which extends one surface portion and is formed of first areas and adjacent different second areas of amorphous material, the second areas forming at least part of the free surface of the first substrate. The first substrate is bonded to the other surface portion with the same crystal orientation as the first surface portion, by molecular bonding over at least the amorphous areas. A solid phase recrystallization of at least part of the amorphous areas according to the crystal orientation of the first substrate is selectively carried and the two surface portions are separated.
摘要翻译： 制造混合基板的方法包括制备单晶第一基板以获得两个表面部分。 制备临时衬底，其包括混合层，沿其延伸一个表面部分并且由第一区域和相邻的不同第二区域的非晶材料形成，第二区域形成第一衬底的至少部分自由表面。 第一衬底通过在至少非晶区上分子键合而与第一表面部分具有相同的晶体取向而与另一表面部分结合。 选择性地承载根据第一基板的晶体取向的至少一部分非晶区域的固相重结晶，并分离两个表面部分。
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4.发明授权Method of producing a hybrid substrate having a continuous buried electrically insulating layer 有权一种具有连续掩埋电绝缘层的混合基板的制造方法公开(公告)号：US08318555B2
公开(公告)日：2012-11-27
申请号：US13125953
申请日：2009-10-29
IPC分类号： H01L21/84
CPC分类号： H01L21/76254
摘要： A method for producing a hybrid substrate includes preparing a first substrate including a mixed layer and an underlying electrically insulating continuous layer, the mixed layer made up of first single-crystal areas and second adjacent amorphous areas, the second areas making up at least part of the free surface of the first substrate. A second substrate is bonded to the first substrate, the second substrate including on the surface thereof, a reference layer with a predetermined crystallographic orientation. The first substrate is bonded to the second substrate by hydrophobic molecular bonding of at least the amorphous areas. A recrystallization of at least part of the amorphous areas to solid phase is carried out according to the crystallographic orientation of the reference layer, and the two substrates are separated at the bonding interface.
摘要翻译： 一种混合基板的制造方法，其特征在于，制备包括混合层和下层电绝缘连续层的第一基板，由第一单晶区域和第二相邻非晶区域构成的混合层，构成第 第一基板的自由表面。 第二衬底被结合到第一衬底，第二衬底在其表面上包括具有预定晶体取向的参考层。 第一衬底通过至少非晶区域的疏水分子键合而结合到第二衬底。 根据参考层的结晶取向进行至少部分非晶区域至固相的再结晶，两个基板在键合界面处分离。
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公开(公告)号：US08501589B2
公开(公告)日：2013-08-06
申请号：US13125951
申请日：2009-10-29
IPC分类号： H01L21/00
CPC分类号： H01L21/76254 , H01L21/02524 , H01L21/02538 , H01L21/02603 , H01L21/02667
摘要： A process for forming a thin film of a given material includes providing a first substrate having, on the surface, an amorphous and/or polycrystalline film of the given material and a second substrate is bonded to the first substrate by hydrophobic direct bonding (molecular adhesion), the second substrate having a single-crystal reference film of a given crystallographic orientation on the surface thereof. A heat treatment is applied at least to the amorphous and/or polycrystalline film, where the heat treatment causes at least a portion of the amorphous and/or polycrystalline film to undergo solid-phase recrystallization along the crystallographic orientation of the reference film, where the reference film acts as a recrystallization seed. The at least partly recrystallized film is then separated from at least a portion of the reference film.
摘要翻译： 用于形成给定材料的薄膜的方法包括提供在表面上具有给定材料的非晶和/或多晶膜的第一基底，并且第二基底通过疏水直接键合（分子粘附 ），第二衬底具有在其表面上给定结晶取向的单晶参考膜。 至少对非晶和/或多晶膜进行热处理，其中热处理使得至少一部分非晶和/或多晶膜沿着参考膜的结晶取向进行固相重结晶，其中 参考膜用作再结晶种子。 然后将至少部分重结晶的膜与参考膜的至少一部分分离。
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6.发明授权Method of producing a hybrid substrate by partial recrystallization of a mixed layer 有权通过混合层的部分再结晶来制造混合基板的方法公开(公告)号：US08841202B2
公开(公告)日：2014-09-23
申请号：US12705039
申请日：2010-02-12
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： A method of producing a hybrid substrate includes preparing a monocrystalline first substrate to obtain two surface portions. A temporary substrate is prepared including a mixed layer along which extends one surface portion and is formed of first areas and adjacent different second areas of amorphous material, the second areas forming at least part of the free surface of the first substrate. The first substrate is bonded to the other surface portion with the same crystal orientation as the first surface portion, by molecular bonding over at least the amorphous areas. A solid phase recrystallization of at least part of the amorphous areas according to the crystal orientation of the first substrate is selectively carried and the two surface portions are separated.
摘要翻译： 制造混合基板的方法包括制备单晶第一基板以获得两个表面部分。 制备临时衬底，其包括混合层，沿其延伸一个表面部分并且由第一区域和相邻的不同第二区域的非晶材料形成，第二区域形成第一衬底的至少部分自由表面。 第一衬底通过在至少非晶区上分子键合而与第一表面部分具有相同的晶体取向而与另一表面部分结合。 选择性地承载根据第一基板的晶体取向的至少一部分非晶区域的固相重结晶，并分离两个表面部分。
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公开(公告)号：US20110201177A1
公开(公告)日：2011-08-18
申请号：US13125951
申请日：2009-10-29
IPC分类号： H01L21/301
CPC分类号： H01L21/76254 , H01L21/02524 , H01L21/02538 , H01L21/02603 , H01L21/02667
摘要： A process for forming a thin film of a given material includes providing a first substrate having, on the surface, an amorphous and/or polycrystalline film of the given material and a second substrate is bonded to the first substrate by hydrophobic direct bonding (molecular adhesion), the second substrate having a single-crystal reference film of a given crystallographic orientation on the surface thereof. A heat treatment is applied at least to the amorphous and/or polycrystalline film, where the heat treatment causes at least a portion of the amorphous and/or polycrystalline film to undergo solid-phase recrystallization along the crystallographic orientation of the reference film, where the reference film acts as a recrystallization seed. The at least partly recrystallized film is then separated from at least a portion of the reference film.
摘要翻译： 用于形成给定材料的薄膜的方法包括提供在表面上具有给定材料的非晶和/或多晶膜的第一基底，并且第二基底通过疏水直接键合（分子粘附 ），第二衬底具有在其表面上给定结晶取向的单晶参考膜。 至少对非晶和/或多晶膜进行热处理，其中热处理使得至少一部分非晶和/或多晶膜沿着参考膜的结晶取向进行固相重结晶，其中 参考膜用作再结晶种子。 然后将至少部分重结晶的膜与参考膜的至少一部分分离。
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公开(公告)号：US09991439B2
公开(公告)日：2018-06-05
申请号：US13808703
申请日：2011-07-05
IPC分类号： H01L41/22 , H01L41/313 , H03H9/13 , H03H3/02
CPC分类号： H01L41/22 , H01L41/313 , H03H3/02 , H03H9/131 , Y10T29/42
摘要： A method of producing a structure made of a piezoelectric material, including: a) production of a stack including at least one metal layer and at least one conductive layer on a substrate made of piezoelectric material, wherein at least one electrical contact is established between the conductive layer and a metal element outside the stack; b) an ionic and/or atomic implantation, through the conductive layer and the metal layer; c) transfer of the substrate onto a transfer substrate, followed by fracturing of the transferred piezoelectric substrate, in an embrittlement area.
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公开(公告)号：US20130111719A1
公开(公告)日：2013-05-09
申请号：US13808703
申请日：2011-07-05
IPC分类号： H01L41/22
CPC分类号： H01L41/22 , H01L41/313 , H03H3/02 , H03H9/131 , Y10T29/42
摘要： A method of producing a structure made of a piezoelectric material, including: a) production of a stack including at least one metal layer and at least one conductive layer on a substrate made of piezoelectric material, wherein at least one electrical contact is established between the conductive layer and a metal element outside the stack; b) an ionic and/or atomic implantation, through the conductive layer and the metal layer; c) transfer of the substrate onto a transfer substrate, followed by fracturing of the transferred piezoelectric substrate, in an embrittlement area.
摘要翻译： 一种制造由压电材料制成的结构的方法，包括：a）在由压电材料制成的基板上制造包括至少一个金属层和至少一个导电层的叠层，其中在 导电层和堆叠外的金属元件; b）通过导电层和金属层的离子和/或原子注入; c）将基板转移到转印基板上，随后在脆化区域中压印转印的压电基板。
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公开(公告)号：US08288250B2
公开(公告)日：2012-10-16
申请号：US12564597
申请日：2009-09-22
CPC分类号： H01L21/7813 , H01L24/80 , H01L25/0657 , H01L25/50 , H01L2225/06513 , H01L2225/06541 , H01L2924/0002 , H01L2924/00
摘要： A method for making a stack of at least two stages of circuits, each stage including a substrate and at least one component and metallic connections formed in or on this substrate, the assembly of a stage to be transferred onto a previous stage including: a) ionic implantation in the substrate of the stage to be transferred through at least part of the components, so as to form a weakened zone, b) formation of metallic connections of the components, c) transfer and assembly of some of this substrate onto the previous stage, and d) a step to thin the transferred part of the substrate by fracture along the weakened zone.
摘要翻译： 一种用于制造至少两级电路的堆叠的方法，每个级包括衬底和形成在该衬底中或之上的至少一个部件和金属连接，待传送到前一级的级的组件，包括：a） 通过至少部分组分转移到待转移阶段的衬底中的离子注入，以便形成弱化区，b）形成组分的金属连接，c）将该衬底中的一些衬底转移并组装到先前的 阶段，以及d）通过沿着弱化区域的断裂来稀释基底的转移部分的步骤。
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