公开(公告)号：US08487311B2

公开(公告)日：2013-07-16

申请号：US13365221

申请日：2012-02-02

申请人： Chun-Yen Liu ,  Cheng-Chieh Tseng ,  Chia-Yuan Yeh

发明人： Chun-Yen Liu ,  Cheng-Chieh Tseng ,  Chia-Yuan Yeh

IPC分类号： H01L29/786

CPC分类号： H01L27/1255 ,  H01L27/1214 ,  H01L27/3265 ,  H01L33/0041

摘要： A pixel structure including a semiconductor layer having at least one source region and at least one drain region; a first insulating layer covering the semiconductor layer; a first conductive layer on the first insulating layer and including at least one gate; a second insulating layer covering the first conductive layer; a second conductive layer on the second insulating layer and including at least one source electrode, at least one drain electrode and at least one bottom electrode, the source region, the source electrode, the drain region, the drain electrode and the gate forming at least one thin film transistor; a third insulating layer covering the second conductive layer; a third conductive layer on the third insulating layer and including at least one top electrode, the top electrode and the bottom electrode forming at least one capacitor; and a pixel electrode electrically connected to the thin film transistor.

摘要翻译： 一种像素结构，包括具有至少一个源极区和至少一个漏极区的半导体层; 覆盖半导体层的第一绝缘层; 在所述第一绝缘层上的第一导电层，并且包括至少一个栅极; 覆盖所述第一导电层的第二绝缘层; 在所述第二绝缘层上的第二导电层，并且包括至少一个源电极，至少一个漏电极和至少一个底电极，所述源极区，所述源电极，所述漏极区，所述漏电极和所述栅至少形成 一个薄膜晶体管; 覆盖所述第二导电层的第三绝缘层; 在所述第三绝缘层上的第三导电层，并且包括至少一个顶部电极，所述顶部电极和所述底部电极形成至少一个电容器; 以及电连接到薄膜晶体管的像素电极。

公开(公告)号：US20120313100A1

公开(公告)日：2012-12-13

申请号：US13365221

申请日：2012-02-02

申请人： Chun-Yen Liu ,  Cheng-Chieh Tseng ,  Chia-Yuan Yeh

发明人： Chun-Yen Liu ,  Cheng-Chieh Tseng ,  Chia-Yuan Yeh

IPC分类号： H01L29/786

CPC分类号： H01L27/1255 ,  H01L27/1214 ,  H01L27/3265 ,  H01L33/0041

摘要： A pixel structure including a semiconductor layer having at least one source region and at least one drain region; a first insulating layer covering the semiconductor layer; a first conductive layer on the first insulating layer and including at least one gate; a second insulating layer covering the first conductive layer; a second conductive layer on the second insulating layer and including at least one source electrode, at least one drain electrode and at least one bottom electrode, the source region, the source electrode, the drain region, the drain electrode and the gate forming at least one thin film transistor; a third insulating layer covering the second conductive layer; a third conductive layer on the third insulating layer and including at least one top electrode, the top electrode and the bottom electrode forming at least one capacitor; and a pixel electrode electrically connected to the thin film transistor.

摘要翻译： 一种像素结构，包括具有至少一个源极区和至少一个漏极区的半导体层; 覆盖半导体层的第一绝缘层; 在所述第一绝缘层上的第一导电层，并且包括至少一个栅极; 覆盖所述第一导电层的第二绝缘层; 在所述第二绝缘层上的第二导电层，并且包括至少一个源电极，至少一个漏电极和至少一个底电极，所述源极区，所述源电极，所述漏极区，所述漏电极和所述栅至少形成 一个薄膜晶体管; 覆盖所述第二导电层的第三绝缘层; 在所述第三绝缘层上的第三导电层，并且包括至少一个顶部电极，所述顶部电极和所述底部电极形成至少一个电容器; 以及电连接到薄膜晶体管的像素电极。

公开(公告)号：US08502757B2

公开(公告)日：2013-08-06

申请号：US13296238

申请日：2011-11-15

申请人： Chun-Yen Liu ,  Chia-Yuan Yeh ,  Cheng-Chieh Tseng

发明人： Chun-Yen Liu ,  Chia-Yuan Yeh ,  Cheng-Chieh Tseng

IPC分类号： G09G5/00 ,  G09G3/30

CPC分类号： G09G3/3233 ,  G09G2300/0861 ,  G09G2310/0262 ,  G09G2320/045

摘要： An organic light emitting display (OLED) includes a voltage adjustment unit for adjusting a preliminary control voltage according to a second reference voltage, a couple unit for coupling a change of the preliminary control voltage to adjust a control voltage, a driving unit for providing a driving current and a driving voltage according to the control voltage, a first reset unit for resetting the driving voltage according to a first reference voltage, a second reset unit for resetting the control voltage according to the driving voltage, an organic light emitting diode for generating output light according to the driving current, and an emission enable unit for providing a control of furnishing the driving current to the organic light emitting diode. Through the circuit operation of the reset units and the voltage adjustment unit, occurrences of image retention phenomenon and pixel brightness distortion on the OLED screen can be avoided.

摘要翻译： 有机发光显示器（OLED）包括用于根据第二参考电压调节初步控制电压的电压调节单元，用于耦合初步控制电压的改变以调整控制电压的耦合单元，用于提供控制电压的驱动单元 根据控制电压驱动电流和驱动电压;第一复位单元，用于根据第一参考电压复位驱动电压;第二复位单元，用于根据驱动电压复位控制电压;有机发光二极管，用于产生 根据驱动电流输出光;以及发光使能单元，用于提供向有机发光二极管提供驱动电流的控制。 通过复位单元和电压调节单元的电路操作，可以避免OLED屏幕上出现图像保留现象和像素亮度失真。

公开(公告)号：US20120235972A1

公开(公告)日：2012-09-20

申请号：US13296238

申请日：2011-11-15

申请人： Chun-Yen Liu ,  Chia-Yuan Yeh ,  Cheng-Chieh Tseng

发明人： Chun-Yen Liu ,  Chia-Yuan Yeh ,  Cheng-Chieh Tseng

IPC分类号： G09G5/00 ,  G09G3/30

CPC分类号： G09G3/3233 ,  G09G2300/0861 ,  G09G2310/0262 ,  G09G2320/045

摘要： An organic light emitting display (OLED) includes a voltage adjustment unit for adjusting a preliminary control voltage according to a second reference voltage, a couple unit for coupling a change of the preliminary control voltage to adjust a control voltage, a driving unit for providing a driving current and a driving voltage according to the control voltage, a first reset unit for resetting the driving voltage according to a first reference voltage, a second reset unit for resetting the control voltage according to the driving voltage, an organic light emitting diode for generating output light according to the driving current, and an emission enable unit for providing a control of furnishing the driving current to the organic light emitting diode. Through the circuit operation of the reset units and the voltage adjustment unit, occurrences of image retention phenomenon and pixel brightness distortion on the OLED screen can be avoided.

摘要翻译： 有机发光显示器（OLED）包括用于根据第二参考电压调节初步控制电压的电压调节单元，用于耦合初步控制电压的改变以调整控制电压的耦合单元，用于提供控制电压的驱动单元 根据控制电压驱动电流和驱动电压;第一复位单元，用于根据第一参考电压复位驱动电压;第二复位单元，用于根据驱动电压复位控制电压;有机发光二极管，用于产生 根据驱动电流输出光;以及发光使能单元，用于提供向有机发光二极管提供驱动电流的控制。 通过复位单元和电压调节单元的电路操作，可以避免OLED屏幕上出现图像保留现象和像素亮度失真。

公开(公告)号：US20110121305A1

公开(公告)日：2011-05-26

申请号：US12693457

申请日：2010-01-26

申请人： Cheng-Chieh Tseng

发明人： Cheng-Chieh Tseng

IPC分类号： H01L29/04 ,  H01L29/786 ,  H01L21/336 ,  H01L21/20

CPC分类号： H01L29/78618

摘要： A thin film transistor device and method of making the same are provided. The thin film transistor device includes a crystalline semiconductor layer and a patterned heavily doped semiconductor layer. The patterned heavily doped semiconductor layer includes a first heavily doped semiconductor layer and a second heavily doped semiconductor layer. The first heavily doped semiconductor layer covers a first side surface and a portion of a top surface of the crystalline semiconductor layer; the second heavily doped semiconductor layer covers a second side surface and a portion of the top surface of the crystalline semiconductor layer.

摘要翻译： 提供薄膜晶体管器件及其制造方法。 薄膜晶体管器件包括晶体半导体层和图案化重掺杂半导体层。 图案化重掺杂半导体层包括第一重掺杂半导体层和第二重掺杂半导体层。 第一重掺杂半导体层覆盖晶体半导体层的第一侧表面和顶表面的一部分; 第二重掺杂半导体层覆盖晶体半导体层的第二侧表面和顶表面的一部分。