公开(公告)号：US20170338126A1

公开(公告)日：2017-11-23

申请号：US15675242

申请日：2017-08-11

Applicant: Cirrus Logic, Inc.

Inventor： Zhonghai SHI ,  Vince DEEMS ,  Hong TIAN

IPC: H01L21/3205 ,  H01L27/08 ,  H01L21/762 ,  H01L21/763 ,  H01L29/06 ,  H01L49/02

CPC classification number: H01L21/32055 ,  H01L21/76224 ,  H01L21/763 ,  H01L27/0802 ,  H01L28/20 ,  H01L29/0649

Abstract: In accordance with embodiments of the present disclosure, an integrated circuit may include at least one region of shallow-trench isolation field oxide, at least one region of dummy diffusion, and a polycrystalline semiconductor resistor. The at least one region of shallow-trench isolation field oxide may be formed on a semiconductor substrate. The at least one region of dummy diffusion may be formed adjacent to the at least one region of shallow-trench isolation field oxide on the semiconductor substrate. The polycrystalline semiconductor resistor may comprise at least one resistor arm formed with a polycrystalline semiconductor material, wherein the at least one resistor arm is formed over each of the at least one region of shallow-trench isolation field oxide and the at least one region of dummy diffusion.