OPTICAL MODULATOR WITH REGION EPITAXIALLY RE-GROWN OVER POLYCRYSTALLINE SILICON

    公开(公告)号:US20230251510A1

    公开(公告)日:2023-08-10

    申请号:US18298964

    申请日:2023-04-11

    CPC classification number: G02F1/025 G02B6/132 H01L21/02667 G02B2006/12142

    Abstract: Embodiments provide for an optical modulator that includes a first silicon region, a polycrystalline silicon region; a gate oxide region joining the first silicon region to a first side of the polycrystalline region; and a second silicon region formed on a second side of the polycrystalline silicon region opposite to the first side, thereby defining an active region of an optical modulator between the first silicon region, the polycrystalline region, the gate oxide region, and the second silicon region. The polycrystalline silicon region may be between 0 and 60 nanometers thick, and may be formed or patterned to the desired thickness. The second silicon region may be epitaxially grown from the polycrystalline silicon region and patterned into a desired cross sectional shape separately from or in combination with the polycrystalline silicon region.

    PROCESS MARGIN RELAXATION
    2.
    发明申请

    公开(公告)号:US20230076009A1

    公开(公告)日:2023-03-09

    申请号:US18056160

    申请日:2022-11-16

    Abstract: Process margin relaxation is provided in relation to a compensated-for process via a first optical device, fabricated to satisfy an operational specification when a compensated-for process is within a first tolerance range; a second optical device, fabricated to satisfy the operational specification when the compensated-for process is within second tolerance range, different than the first tolerance range; a first optical switch connected to an input and configured to output an optical signal received from the input to one of the first optical device and the second optical device; and a second optical switch configured to combine outputs from the first optical device and the second optical device.

    INTEGRATED DECOUPLING CAPACITORS
    3.
    发明申请

    公开(公告)号:US20220077084A1

    公开(公告)日:2022-03-10

    申请号:US17454937

    申请日:2021-11-15

    Abstract: Embodiments herein describe providing a decoupling capacitor on a first wafer (or substrate) that is then bonded to a second wafer to form an integrated decoupling capacitor. Using wafer bonding means that the decoupling capacitor can be added to the second wafer without having to take up space in the second wafer. In one embodiment, after bonding the first and second wafers, one or more vias are formed through the second wafer to establish an electrical connection between the decoupling capacitor and bond pads on a first surface of the second wafer. An electrical IC can then be flip chipped bonded to the first surface. As part of coupling the decoupling capacitor to the electrical IC, the decoupling capacitor is connected between the rails of a power source (e.g., VDD and VSS) that provides power to the electrical IC.

    FABRICATION-TOLERANT ON-CHIP MULTIPLEXERS AND DEMULTIPLEXERS

    公开(公告)号:US20240393530A1

    公开(公告)日:2024-11-28

    申请号:US18791228

    申请日:2024-07-31

    Abstract: Fabrication-tolerant on-chip multiplexers and demultiplexers are provides via a lattice filter interleaver configured to receive an input signal including a plurality of individual signals and to produce a first interleaved signal with a first subset of the plurality of individual signals and a second interleaved signal with a second subset of the plurality of individual signals; a first Bragg interleaver configured to receive the first interleaved signal and produce a first output signal including a first individual signal of the plurality of individual signals and a second output signal including a second individual signal of the plurality of individual signals; and a second Bragg interleaver configured to receive the second interleaved signal and produce a third output signal including a third individual signal of the plurality of individual signals and a fourth output signal including a fourth individual signal of the plurality of individual signals.

    BROADBAND OPTICAL COUPLING USING DISPERSIVE ELEMENTS

    公开(公告)号:US20210341672A1

    公开(公告)日:2021-11-04

    申请号:US16864104

    申请日:2020-04-30

    Abstract: Embodiments include a fiber to photonic chip coupling system including a collimating lens which collimate a light transmitted from a light source and an optical grating including a plurality of grating sections. The system also includes an optical dispersion element which separates the collimated light from the collimating lens into a plurality of light beams and direct each of the plurality of light beams to a respective section of the plurality of grating sections. Each light beam in the plurality of light beams is diffracted from the optical dispersion element at a different wavelength a light beam of the plurality of light beams is directed to a respective section of the plurality of grating sections at a respective incidence angle based on the wavelength of the light beam of the plurality of light beams to provide optimum grating coupling.

    INTEGRATED BROADBAND OPTICAL COUPLERS WITH ROBUSTNESS TO MANUFACTURING VARIATION

    公开(公告)号:US20210181419A1

    公开(公告)日:2021-06-17

    申请号:US17187477

    申请日:2021-02-26

    Abstract: An optical device is disclosed, including a phase delay, a first adiabatic coupler adapted to receive an input signal and adapted to be optically coupled to an input of the phase delay, and a second adiabatic coupler adapted to be optically coupled to an output of the phase delay. The second adiabatic coupler includes a first waveguide including a first portion optically coupled to the first output and including a first width, and a second waveguide including a second portion optically coupled to the second output and including a second width that is approximately equal to the first width.

    OPTICAL MODULATOR WITH REGION EPITAXIALLY RE-GROWN OVER POLYCRYSTALLINE SILICON

    公开(公告)号:US20210132420A1

    公开(公告)日:2021-05-06

    申请号:US17147004

    申请日:2021-01-12

    Abstract: Embodiments provide for an optical modulator that includes a first silicon region, a polycrystalline silicon region; a gate oxide region joining the first silicon region to a first side of the polycrystalline region; and a second silicon region formed on a second side of the polycrystalline silicon region opposite to the first side, thereby defining an active region of an optical modulator between the first silicon region, the polycrystalline region, the gate oxide region, and the second silicon region. The polycrystalline silicon region may be between 0 and 60 nanometers thick, and may be formed or patterned to the desired thickness. The second silicon region may be epitaxially grown from the polycrystalline silicon region and patterned into a desired cross sectional shape separately from or in combination with the polycrystalline silicon region.

    OPTICAL MODULATOR WITH REGION EPITAXIALLY RE-GROWN OVER POLYCRYSTALLINE SILICON

    公开(公告)号:US20200292853A1

    公开(公告)日:2020-09-17

    申请号:US16351079

    申请日:2019-03-12

    Abstract: Embodiments provide for an optical modulator that includes a first silicon region, a polycrystalline silicon region; a gate oxide region joining the first silicon region to a first side of the polycrystalline region; and a second silicon region formed on a second side of the polycrystalline silicon region opposite to the first side, thereby defining an active region of an optical modulator between the first silicon region, the polycrystalline region, the gate oxide region, and the second silicon region. The polycrystalline silicon region may be between 0 and 60 nanometers thick, and may be formed or patterned to the desired thickness. The second silicon region may be epitaxially grown from the polycrystalline silicon region and patterned into a desired cross sectional shape separately from or in combination with the polycrystalline silicon region.

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