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公开(公告)号:US09405698B2
公开(公告)日:2016-08-02
申请号:US14336274
申请日:2014-07-21
Applicant: Cisco Technology, Inc.
Inventor: Mario Mazzola , Satyanarayana Nishtala , Luca Cafiero , Philip Manela
CPC classification number: G06F12/1009 , G06F11/1016 , G06F12/0207 , G06F12/0292 , G06F12/0607 , G06F13/1684 , G06F13/4234
Abstract: This document discusses, among other things, an example system and methods for memory expansion. An example embodiment includes receiving a memory request from a memory controller over a channel. Based on the memory request, the example embodiment includes selecting a location in memory to couple to a sub-channel of the channel and configuring the set of field effect transistors to couple the channel with the sub-channel. In the example embodiment, data may be allowed to flow between the memory controller and the location in the memory over the channel and the sub-channel.
Abstract translation: 本文档还讨论了一个用于内存扩展的示例系统和方法。 示例实施例包括通过信道从存储器控制器接收存储器请求。 基于存储器请求,示例性实施例包括选择存储器中的位置以耦合到信道的子信道并且配置该场效应晶体管集合以将该信道与子信道耦合。 在示例实施例中,可以允许数据通过信道和子信道在存储器控制器和存储器中的位置之间流动。
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公开(公告)号:US20140331095A1
公开(公告)日:2014-11-06
申请号:US14336274
申请日:2014-07-21
Applicant: Cisco Technology, Inc.
Inventor: Mario Mazzola , Satyanarayana Nishtala , Luca Cafiero , Philip Manela
CPC classification number: G06F12/1009 , G06F11/1016 , G06F12/0207 , G06F12/0292 , G06F12/0607 , G06F13/1684 , G06F13/4234
Abstract: This document discusses, among other things, an example system and methods for memory expansion. An example embodiment includes receiving a memory request from a memory controller over a channel. Based on the memory request, the example embodiment includes selecting a location in memory to couple to a sub-channel of the channel and configuring the set of field effect transistors to couple the channel with the sub-channel. In the example embodiment, data may be allowed to flow between the memory controller and the location in the memory over the channel and the sub-channel.
Abstract translation: 本文档还讨论了一个用于内存扩展的示例系统和方法。 示例实施例包括通过信道从存储器控制器接收存储器请求。 基于存储器请求,示例性实施例包括选择存储器中的位置以耦合到信道的子信道并且配置该场效应晶体管集合以将该信道与子信道耦合。 在示例实施例中,可以允许数据通过信道和子信道在存储器控制器和存储器中的位置之间流动。
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