公开(公告)号：US20240203731A1

公开(公告)日：2024-06-20

申请号：US18537875

申请日：2023-12-13

申请人： Commissariat à I'Énergie Atomique et aux Énergies Alternatives

发明人： Rémy Gassilloud ,  Julien Patouillard ,  Bérangére Hyot ,  Amélie Dussaigne ,  Stéphane Cadot ,  Matthew Charles ,  François Martin ,  Nicolas Gauthier ,  Christine Raynaud

IPC分类号： H01L21/02

CPC分类号： H01L21/0254 ,  H01L21/02529 ,  H01L21/02568 ,  H01L21/02581 ,  H01L21/02631 ,  H01L21/02664

摘要： A method including the following successive steps: a) forming, on a surface of a support substrate, a first layer made of a material selected from among a lamellar dichalcogenide or a lamellar chalcogenide including a stack of sheets; b) forming, by physical vapor deposition on the side of said surface of the support substrate, a second layer made of a first III-N semiconductor material coating the first layer; and c) carrying out a thermo-chemical treatment of the first layer resulting, in the first layer, in a conversion of van der Waals bonds between the sheets of the first layer into covalent bonds.