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公开(公告)号：US20220393026A1
公开(公告)日：2022-12-08
申请号：US17826706
申请日：2022-05-27
发明人： René Escoffier , Blend Mohamad
IPC分类号： H01L29/778 , H01L29/20 , H01L29/66 , H01L29/40 , H01L29/78
摘要： An electronic device including semiconductor region located on a gallium nitride layer, two electrodes, located on either side of and insulated from the semiconductor region, the electrodes partially penetrating into the gallium nitride layer, and two lateral MOS transistors formed inside and on top of the semiconductor region.
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公开(公告)号：US20220271134A1
公开(公告)日：2022-08-25
申请号：US17668198
申请日：2022-02-09
发明人： Blend Mohamad , René Escoffier
IPC分类号： H01L29/423 , H01L29/66 , H01L29/778 , H01L29/40
摘要： A transistor comprising a gallium nitride layer having a first gate electrode partially penetrating into it, having: a first side coated with a first thickness of a first insulating material and of a second insulating material; and with a second thickness of a conductive material; and a bottom coated with a third thickness, smaller than the first thickness, of the first insulating material.
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公开(公告)号：US20220329242A1
公开(公告)日：2022-10-13
申请号：US17639857
申请日：2020-09-04
发明人： René Escoffier , Julien Buckley
IPC分类号： H03K17/687 , G01R19/00
摘要： A circuit, intended to be associated in series with a load to be powered including a first field-effect transistor; at least one second field-effect transistor, associated in parallel with the first transistor; and at least one sensor of information representative of a current transmitted to said load, the gate of the second transistor being coupled to an output of the sensor.
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