-
1.发明公开公开(公告)号：US20240138248A1
公开(公告)日：2024-04-25
申请号：US18548047
申请日：2022-03-01
发明人： Doojin VAK , Regine CHANTLER , Hasitha WEERASINGHE
摘要： A process of forming an electrode interconnection between at least two adjacent unit devices in an integrated multilayer thin-film electronic device comprising: providing an intermediary device that comprises: a first electrode layer on a thin film substrate comprising a first patterned coating that includes at least two spaced apart first electrode sections of adjacent unit devices; a first functional layer comprising a substantially continuous coating over the first electrode layer; and a second functional layer comprising a second patterned coating on the first functional layer comprising at least two spaced apart functional sections, each functional section positioned on the first functional layer to overlay a portion of one of the first electrode sections so to define a gap portion between adjacent functional sections that includes a portion of that first electrode section and the first functional layer; and applying a second electrode layer over the second functional layer as a third patterned coating that includes at least two spaced apart second electrode sections of adjacent unit devices, each second electrode section being positioned to overlay at least one functional section of the second functional layer and a portion of an adjoining gap portion that includes at least one portion of the first electrode section of an adjacent unit device, the third patterned coating being formed using a solution including a conductive species and at least a first solvent, wherein the first functional layer is soluble in the first solvent and the second functional layer has a low to zero solubility in the first solvent, such that application of the second electrode layer to the gap portion forms at least one electrically conductive path through the first functional layer between the first electrode and the second electrode of adjacent unit devices.
-
公开(公告)号：US20240194420A1
公开(公告)日：2024-06-13
申请号：US18389935
申请日：2023-12-20
发明人： Doojin VAK , Karl WEBER , Andrew FAULKS , Régine CHANTLER
IPC分类号： H01G9/20 , H01G9/00 , H01L31/02 , H01L31/0384 , H01L31/0392 , H01L31/05 , H01L31/18 , H10K30/30 , H10K71/13 , H10K71/60 , H10K77/10
CPC分类号： H01G9/2081 , H01G9/0036 , H01G9/2009 , H01G9/2095 , H01L31/0201 , H01L31/03845 , H01L31/03926 , H01L31/0504 , H01L31/1876 , H10K30/30 , H10K71/13 , H10K71/611 , H10K77/111
摘要： Embodiments of the invention are directed to a method of producing a photovoltaic apparatus. The method includes the steps of providing a substrate; forming a first conducting electrode layer on the substrate; forming a first charge selective layer at least partially over the first conducting electrode layer; forming a photoactive layer at least partially over the first charge selective layer; forming a second charge selective layer at least partially over the photoactive layer; removing portions the formed layers at predetermined intervals along the substrate creating discrete layer sections partially forming individual photovoltaic modules; and printing a second conducting electrode layer partially over the discrete layer sections and substrate to form a plurality of photovoltaic modules, each photovoltaic module having first and second module terminals, a plurality of inter-module rails, each inter-module rail being located between adjacent photovoltaic modules, a first bus bar extending along one side of the photovoltaic modules, and a second bus bar extending along an opposite side of the photovoltaic modules.
-
公开(公告)号：US20210383977A1
公开(公告)日：2021-12-09
申请号：US17284044
申请日：2019-10-07
发明人： Mei GAO , Chuantian ZUO , Doojin VAK
摘要： The invention provides a method of forming a perovskite film for an optoelectronic device, the method comprising: applying a perovskite precursor solution to at least one part of a hydrophilic region of a substrate, wherein the hydrophilic region is bounded by a hydrophobic boundary; allowing the perovskite precursor solution to spread over the hydrophilic region, wherein the perovskite precursor solution is retained within the hydrophilic region by at least a portion of the hydrophobic boundary; and drying the perovskite precursor solution to form a perovskite film on the hydrophilic region.
-
4.发明公开公开(公告)号：US20240237504A9
公开(公告)日：2024-07-11
申请号：US18548047
申请日：2022-03-01
发明人： Doojin VAK , Regine CHANTLER , Hasitha WEERASINGHE
摘要： A process of forming an electrode interconnection between at least two adjacent unit devices in an integrated multilayer thin-film electronic device comprising: providing an intermediary device that comprises: a first electrode layer on a thin film substrate comprising a first patterned coating that includes at least two spaced apart first electrode sections of adjacent unit devices; a first functional layer comprising a substantially continuous coating over the first electrode layer; and a second functional layer comprising a second patterned coating on the first functional layer comprising at least two spaced apart functional sections, each functional section positioned on the first functional layer to overlay a portion of one of the first electrode sections so to define a gap portion between adjacent functional sections that includes a portion of that first electrode section and the first functional layer; and applying a second electrode layer over the second functional layer as a third patterned coating that includes at least two spaced apart second electrode sections of adjacent unit devices, each second electrode section being positioned to overlay at least one functional section of the second functional layer and a portion of an adjoining gap portion that includes at least one portion of the first electrode section of an adjacent unit device, the third patterned coating being formed using a solution including a conductive species and at least a first solvent, wherein the first functional layer is soluble in the first solvent and the second functional layer has a low to zero solubility in the first solvent, such that application of the second electrode layer to the gap portion forms at least one electrically conductive path through the first functional layer between the first electrode and the second electrode of adjacent unit devices.
-
公开(公告)号：US20170338045A1
公开(公告)日：2017-11-23
申请号：US15537335
申请日：2016-01-21
发明人： Doojin VAK , Youn-Jung HEO
CPC分类号： H01G9/0029 , H01G9/2018 , H01G9/2072 , H01G9/2095 , H01L27/302 , H01L51/0004 , H01L51/0007 , H01L51/005 , H01L51/0077 , H01L51/4233 , H01L51/4246 , H01L51/4273 , Y02E10/549
摘要： A process of forming a photoactive layer of a planar perovskite photoactive device comprising: applying at least one layer of a first precursor solution to a substrate to form a first precursor coating on at least one surface of the substrate, the first precursor solution comprising MX2 and AX dissolved in a first coating solvent, wherein the molar ratio of MX2:AX=1:n with 0
-
-
-
-
搜索结果
5 条记录 (耗时 0.023 秒)
