摘要:
A host lattice modified GOS scintillating material and a method for using a host lattice modified GOS scintillating material is provided. The host lattice modified GOS scintillating material has a shorter afterglow than conventional GOS scintillating material. In addition, a radiation detector and an imaging device incorporating a host lattice modified GOS scintillating material are provided.
摘要:
A host lattice modified GOS scintillating material and a method for using a host lattice modified GOS scintillating material is provided. The host lattice modified GOS scintillating material has a shorter afterglow than conventional GOS scintillating material. In addition, a radiation detector and an imaging device incorporating a host lattice modified GOS scintillating material are provided.
摘要:
A scintillation element comprises a scintillation material, and a reflective layer, wherein the reflective layer is formed as an intrinsic part of the scintillation material. Preferably, a plurality of scintillation elements may be arranged to form a scintillation array. A method for producing a scintillation element comprises providing a scintillation material, and producing a reflective layer at the scintillation material by exposing the scintillation material to physical and/or chemical conditions in such a way that the reflective layer is formed out of a part of the scintillation material.
摘要:
An imaging system (100) includes a radiation source (110) and a radiation sensitive detector array (116), which includes a scintillator array (118) and a photosensor array (120) optically coupled to the scintillator array, wherein the scintillator array includes Gd2O2S:Pr,Tb,Ce. A method includes detecting radiation with a radiation sensitive detector array (116) of an imaging system (100), wherein the radiation sensitive detector array includes a Gd2O2S:Pr,Tb,Ce based scintillator array (118). A radiation sensitive detector array (116) includes a scintillator array (118) and a photosensor array (120) optically coupled to the scintillator array, wherein the scintillator array includes Gd2O2S:Pr,Tb,Ce, and an amount of Tb3+ in the Gd2O2S:Pr,Tb,Ce is equal to or less than two hundred mole parts per million.
摘要翻译:成像系统(100)包括辐射源(110)和辐射敏感检测器阵列(116),其包括闪烁体阵列(118)和光学耦合到闪烁体阵列的光电传感器阵列(120),其中所述闪烁体阵列包括 Gd2O2S:Pr,Tb,Ce。 一种方法包括用成像系统(100)的辐射敏感检测器阵列(116)检测辐射,其中所述辐射敏感检测器阵列包括Gd 2 O 2 S:Pr,Tb,Ce基闪烁体阵列(118)。 辐射敏感检测器阵列(116)包括闪烁体阵列(118)和光学耦合到闪烁体阵列的光电传感器阵列(120),其中闪烁体阵列包括Gd 2 O 2 S:Pr,Tb,Ce和Gd 2 O 2 S中的Tb 3+ :Pr,Tb,Ce等于或小于百万分之二百摩尔。
摘要:
An imaging system (100) includes a radiation source (110) and a radiation sensitive detector array (116), which includes a scintillator array (118) and a photosensor array (120) optically coupled to the scintillator array, wherein the scintillator array includes Gd2O2S:Pr,Tb,Ce. A method includes detecting radiation with a radiation sensitive detector array (116) of an imaging system (100), wherein the radiation sensitive detector array includes a Gd2O2S:Pr,Tb,Ce based scintillator array (118). A radiation sensitive detector array (116) includes a scintillator array (118) and a photosensor array (120) optically coupled to the scintillator array, wherein the scintillator array includes Gd2O2S:Pr,Tb,Ce, and an amount of Tb3+ in the Gd2O2S:Pr,Tb,Ce is equal to or less than two hundred mole parts per million.
摘要翻译:成像系统(100)包括辐射源(110)和辐射敏感检测器阵列(116),其包括闪烁体阵列(118)和光学耦合到闪烁体阵列的光电传感器阵列(120),其中所述闪烁体阵列包括 Gd2O2S:Pr,Tb,Ce。 一种方法包括用成像系统(100)的辐射敏感检测器阵列(116)检测辐射,其中所述辐射敏感检测器阵列包括Gd 2 O 2 S:Pr,Tb,Ce基闪烁体阵列(118)。 辐射敏感检测器阵列(116)包括闪烁体阵列(118)和光学耦合到闪烁体阵列的光电传感器阵列(120),其中闪烁体阵列包括Gd 2 O 2 S:Pr,Tb,Ce和Gd 2 O 2 S中的Tb 3+ :Pr,Tb,Ce等于或小于百万分之二百摩尔。
摘要:
A scintillation element comprises a scintillation material, and a reflective layer, wherein the reflective layer is formed as an intrinsic part of the scintillation material. Preferably, a plurality of scintillation elements may be arranged to form a scintillation array. A method for producing a scintillation element comprises providing a scintillation material, and producing a reflective layer at the scintillation material by exposing the scintillation material to physical and/or chemical conditions in such a way that the reflective layer is formed out of a part of the scintillation material.
摘要:
A hot axial pressing method for sintering a ceramic powder, particularly doped Gd2O2S, comprises the step of placing a first porous body (7), the ceramic powder (9) and a second porous body (7) into a mould shell (5) supported by a support (13, 14). The ceramic powder (9) is located between the porous bodies (7). Gaseous components are evacuated from the ceramic powder (9) up to an ambient pressure of less than 0.8 bar. The porous body (7) and the ceramic powder (9) are heated to a maximum temperature of at least 900° C. and are applied to a pressure up to a maximum pressure of at least 75 Mpa. According to the invention the variation in time of the heating step and the variation in time of the pressure applying step is adjusted to each other such that the mould shell 5 is held by the porous bodies (7) and/or the ceramic powder (9) in a state where the mould shell (5) and the support (13, 14) are disconnected with respect to each other.
摘要:
The present invention is directed to a Gd2O2S:M fluorescent ceramic material with a very short afterglow, wherein M represents at least one element selected from the group Pr, Th, Yb, Dy, Sm and/or Ho and the Gd2O2S:M fluorescent ceramic material comprises further: europium of ≦1 wt. ppm based on Gd2O2S, and cerium of ≧0.1 wt. ppm to ≦100 wt. ppm based on Gd2O2S, wherein the content of cerium is in excess of the content of europium with a ratio of europium to cerium of 1:10 to 1:150.
摘要翻译:本发明涉及具有非常短的余辉的Gd 2 O 2 S 2 M荧光陶瓷材料,其中M表示选自Pr, Th,Yb,Dy,Sm和/或Ho和Gd 2 O 2 S S M荧光陶瓷材料还包括:<= 1wt。 基于Gd 2 O 2 S的ppm,> 0.1重量%的铈。 ppm至<= 100wt。 基于Gd 2 O 2 S的ppm,其中铈的含量超过铕的含量,铕与铈的比例为1:10至1: 150。