利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

7 条记录 (耗时 0.022 秒)

    Thin film crystal growth by laser annealing
    1.
    发明授权
    Thin film crystal growth by laser annealing 失效

    公开(公告)号：US06635932B2

    公开(公告)日：2003-10-21

    申请号：US10213698

    申请日：2002-08-06

    申请人： Costas P. Grigoropoulos ,  Mutsuko Hatano ,  Ming-Hong Lee ,  Seung-Jae Moon

    发明人： Costas P. Grigoropoulos ,  Mutsuko Hatano ,  Ming-Hong Lee ,  Seung-Jae Moon

    IPC分类号： H01L2362

    CPC分类号： H01L21/02686 ,  H01L21/2026

    摘要： A layer of material is transformed from a first state to a second state by the application of energy from an energy beam. For example, large direction- and location-controlled p-Si grain growth utilizes recrystallization of amorphous silicon from superpositioned laser irradiation. The superpositioned laser irradiation controls cooling and solidification processes that determine the resulting crystal structure. Specifically, a first laser beam of a first pulse duration is used to melt an amorphous silicon (a-Si) film and to create a temperature gradient. After an initial delay, a second laser beam with shorter pulse duration is superpositioned with the first laser beam. When a-Si is irradiated by the second laser beam, the area heated by the first laser beam becomes completely molten. Spontaneous nucleation is initiated in the supercooled liquid-Si when the liquid-Si temperature drops below the nucleation temperature. However, the central part of the liquid pool subjected to continued heating by the first laser beam cools down slowly. Grains nucleated in the periphery of the fully molten spot can therefore grow into the liquid-Si and extend in length until they collide at the center of the first laser beam spot. The first laser beam prolongs the molten Si phase and induces grain growth in a certain direction. The second laser beam triggers nucleation and controls grain location leading to subsequent lateral grain growth.

    Thin film crystal growth by laser annealing
    2.
    发明授权
    Thin film crystal growth by laser annealing 失效
    薄膜晶体通过激光退火生长

    公开(公告)号：US06451631B1

    公开(公告)日：2002-09-17

    申请号：US09637325

    申请日：2000-08-10

    申请人： Costas P. Grigoropoulos ,  Mutsuko Hatano ,  Ming-Hong Lee ,  Seung-Jae Moon

    发明人： Costas P. Grigoropoulos ,  Mutsuko Hatano ,  Ming-Hong Lee ,  Seung-Jae Moon

    IPC分类号： H01L2100

    CPC分类号： H01L21/02686 ,  H01L21/2026

    摘要： A layer of material is transformed from a first state to a second state by the application of energy from an energy beam. For example, large direction- and location-controlled p-Si grain growth utilizes recrystallization of amorphous silicon from superpositioned laser irradiation. The superpositioned laser irradiation controls cooling and solidification processes that determine the resulting crystal structure. Specifically, a first laser beam of a first pulse duration is used to melt an amorphous silicon (a-Si) film and to create a temperature gradient. After an initial delay, a second laser beam with shorter pulse duration is superpositioned with the first laser beam. When a-Si is irradiated by the second laser beam, the area heated by the first laser beam becomes completely molten. Spontaneous nucleation is initiated in the supercooled liquid-Si when the liquid-Si temperature drops below the nucleation temperature. However, the central part of the liquid pool subjected to continued heating by the first laser beam cools down slowly. Grains nucleated in the periphery of the fully molten spot can therefore grow into the liquid-Si and extend in length until they collide at the center of the first laser beam spot. The first laser beam prolongs the molten Si phase and induces grain growth in a certain direction. The second laser beam triggers nucleation and controls grain location leading to subsequent lateral grain growth.

    摘要翻译： 通过施加能量束的能量将材料层从第一状态转变到第二状态。 例如，大的方向和位置控制的p-Si晶粒生长利用来自叠加激光照射的非晶硅的再结晶。 叠加的激光照射控制确定所得晶体结构的冷却和凝固过程。 具体地，使用第一脉冲持续时间的第一激光束来熔化非晶硅（a-Si）膜并产生温度梯度。 在初始延迟之后，具有较短脉冲持续时间的第二激光束与第一激光束重叠。 当由第二激光束照射a-Si时，被第一激光束加热的区域完全熔化。 当液体Si温度下降到成核温度以下时，过冷的液态Si开始自发成核。 然而，经受第一激光束的持续加热的液池的中心部分缓慢地冷却。 因此，在完全熔融点的周边成核的晶粒可以生长成液态Si，并且长度延伸直到它们在第一激光束点的中心碰撞。 第一激光束延长了熔融的Si相并在一定方向上引起晶粒生长。 第二激光束触发成核并控制晶粒位置，导致随后的横向晶粒生长。

    Copolymer comprising alkylene carbonate and method of preparing same
    5.
    发明授权
    Copolymer comprising alkylene carbonate and method of preparing same 有权
    包含碳酸亚烷基酯的共聚物及其制备方法

    公开(公告)号：US06713593B2

    公开(公告)日：2004-03-30

    申请号：US10149541

    申请日：2002-05-14

    申请人： Moon-Hor Ree ,  Yong-Taek Hwang ,  Seung-Jae Moon ,  Myung-Hwan Kim

    发明人： Moon-Hor Ree ,  Yong-Taek Hwang ,  Seung-Jae Moon ,  Myung-Hwan Kim

    IPC分类号： C08G6400

    CPC分类号： C08G63/64

    摘要： Disclosed are copolymers including an alkylene carbonate, and a method of preparing the same. The copolymers are represented by Formulas 1 and 2, and they are prepared with terpolymerized lactide or delta-valerolactone, carbon dioxide, and alkylene oxide, in the presence of a catalyst. (wherein, —O—A— is an opened alkylene oxide structure, the alkylene oxide being selected from the group consisting of ethylene oxide, propylene oxide, 1-butene oxide, 1,1-dimethylethylene oxide, cyclopentene oxide, cyclohexene oxide, 1-phenylethylene oxide, 1-vinylethylene oxide, and 1-trifluoromethylethylene oxide; and x and y are independently an integer being equal to or less than 2,000, n is an integer, and n=(z-x-y), wherein z is an integer being equal to or less than 20,000.).

    摘要翻译： 公开了包括碳酸亚烷基酯的共聚物及其制备方法。 共聚物由式1和2表示，它们在催化剂存在下由三元共聚丙交酯或δ-戊内酯，二氧化碳和环氧烷制备（其中，-OA-是开环烯化氧结构， 环氧烷选自环氧乙烷，环氧丙烷，1-丁烯氧化物，1,1-二甲基环氧乙烷，环戊烯氧化物，环己烯氧化物，1-苯基环氧乙烷，1-乙烯基环氧乙烷和1-三氟甲基亚乙基氧; y独立地为等于或小于2,000的整数，n为整数，n =（zxy），其中z为等于或小于20,000的整数。