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公开(公告)号：US08382920B2
公开(公告)日：2013-02-26
申请号：US11715259
申请日：2007-03-07
IPC分类号： C22F1/18
CPC分类号： B21B1/026 , B21B1/0805 , C22C27/02 , C22F1/18 , C22F1/183 , C23C14/3414 , Y10T428/12993
摘要： A method of making metal articles as well as sputtering targets is described, which involves deforming an ingot to preferred dimensions. In addition, products made by the process of the present invention are further described.
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2.发明授权High purity tantalum, products containing the same, and methods of making the same 有权高纯度钽，含有相同的产品及其制造方法公开(公告)号：US06893513B2
公开(公告)日：2005-05-17
申请号：US09922815
申请日：2001-08-06
IPC分类号： B22F9/24 , C22B3/44 , C22B9/04 , C22B9/20 , C22B9/22 , C22B34/24 , C22C27/02 , C22F1/00 , C22F1/18 , C23C14/34
CPC分类号： C23C14/3414 , C22B34/24 , Y10S148/014 , Y10S148/158
摘要： High purity tantalum metals and alloys containing the same are described. The tantalum metal preferably has a purity of at least 99.995% and more preferably at least 99.999%. In addition, tantalum metal and alloys thereof are described, which either have a grain size of about 50 microns or less, or a texture in which a (100) intensity within any 5% increment of thickness is less than about 15 random, or an incremental log ratio of (111):(100) intensity of greater than about −4.0, or any combination of these properties. Also described are articles and components made from the tantalum metal which include, but are not limited to, sputtering targets, capacitor cans, resistive film layers, wire, and the like. Also disclosed is a process for making the high purity metal which includes the step of reacting a salt-containing tantalum with at least one compound capable of reducing this salt to tantalum powder and a second salt in a reaction container. The reaction container or liner in the reaction container and the agitator or liner on the agitator are made from a metal material having the same or higher vapor pressure of melted tantalum. The high purity tantalum preferably has a fine and uniform microstructure.
摘要翻译： 描述了高纯度钽金属及含有它们的合金。 钽金属的纯度优选为99.995％以上，更优选为99.999％以上。 此外，描述了钽金属及其合金，其具有约50微米或更小的粒度，或其中任何5％厚度增量内的（100）强度小于约15度的质地，或 （111）:( 100）强度的增量对数比大于约-4.0，或这些性质的任何组合。 还描述了由钽金属制成的制品和部件，其包括但不限于溅射靶，电容器罐，电阻膜层，导线等。 还公开了一种制备高纯度金属的方法，其包括使含盐钽与至少一种能够将该盐还原成钽粉末的化合物和在反应容器中的第二盐反应的步骤。 反应容器中的反应容器或衬套以及搅拌器上的搅拌器或衬套由具有熔融钽的相同或更高蒸气压的金属材料制成。 高纯度钽优选具有微细且均匀的微结构。
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公开(公告)号：US08168118B2
公开(公告)日：2012-05-01
申请号：US12552386
申请日：2009-09-02
IPC分类号： B22F1/00
CPC分类号： H01G9/0525 , B22F1/0088 , B22F2998/00 , B22F2999/00 , C23C8/02 , C23C8/80 , C23C14/3414 , H01J37/3426 , Y10T428/12049 , Y10T428/12104 , B22F3/15 , B22F3/20 , B22F2201/02
摘要： A method of forming a sputtering target and other metal articles having controlled oxygen and nitrogen content levels and the articles so formed are described. The method includes surface-nitriding a deoxidized metal powder and further includes consolidating the powder by a powder metallurgy technique. Preferred metal powders include, but are not limited to, valve metals, including tantalum, niobium, and alloys thereof.
摘要翻译： 描述了形成具有受控的氧和氮含量水平的溅射靶和其它金属制品的方法以及如此形成的制品。 该方法包括对脱氧金属粉末进行表面氮化，还包括通过粉末冶金技术固化粉末。 优选的金属粉末包括但不限于阀金属，包括钽，铌及其合金。
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公开(公告)号：US07585380B2
公开(公告)日：2009-09-08
申请号：US10320980
申请日：2002-12-17
CPC分类号： C23C14/3414 , C22B34/24 , Y10S148/014 , Y10S148/158
摘要： High purity tantalum metals and alloys containing the same are described. The tantalum metal preferably has a purity of at least 99.995% and more preferably at least 99.999%. In addition, tantalum metal and alloys thereof are described, which either have a grain size of about 50 microns or less, or a texture in which a (100) intensity within any 5% increment of thickness is less than about 15 random, or an incremental log ratio of (111):(100) intensity of greater than about −4.0, or any combination of these properties. Also described are articles and components made from the tantalum metal which include, but are not limited to, sputtering targets, capacitor cans, resistive film layers, wire, and the like. Also disclosed is a process for making the high purity metal which includes the step of reacting a salt-containing tantalum with at least one compound capable of reducing this salt to tantalum powder and a second salt in a reaction container. The reaction container or liner in the reaction container and the agitator or liner on the agitator are made from a metal material having the same or higher vapor pressure of melted tantalum. The high purity tantalum preferably has a fine and uniform microstructure.
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5.发明授权High purity tantalum, products containing the same, and methods of making the same 有权高纯度钽，含有相同的产品及其制造方法公开(公告)号：US07431782B2
公开(公告)日：2008-10-07
申请号：US10145336
申请日：2002-05-14
CPC分类号： C23C14/3414 , C22B34/24 , Y10S148/014 , Y10S148/158
摘要： High purity tantalum metals and alloys containing the same are described. The tantalum metal preferably has a purity of at least 99.995% and more preferably at least 99.999%. In addition, tantalum metal and alloys thereof are described, which either have a grain size of about 50 microns or less, or a texture in which a (100) intensity within any 5% increment of thickness is less than about 15 random, or an incremental log ratio of (111):(100) intensity of greater than about −4.0, or any combination of these properties. Also described are articles and components made from the tantalum metal which include, but are not limited to, sputtering targets, capacitor cans, resistive film layers, wire, and the like. Also disclosed is a process for making the high purity metal which includes the step of reacting a salt-containing tantalum with at least one compound capable of reducing this salt to tantalum powder and a second salt in a reaction container. The reaction container or liner in the reaction container and the agitator or liner on the agitator are made from a metal material having the same or higher vapor pressure of melted tantalum. The high purity tantalum preferably has a fine and uniform microstructure.
摘要翻译： 描述了高纯度钽金属及含有它们的合金。 钽金属的纯度优选为99.995％以上，更优选为99.999％以上。 此外，描述了钽金属及其合金，其具有约50微米或更小的粒度，或其中任何5％厚度增量内的（100）强度小于约15度的质地，或 （111）:( 100）强度的增量对数比大于约-4.0，或这些性质的任何组合。 还描述了由钽金属制成的制品和部件，其包括但不限于溅射靶，电容器罐，电阻膜层，导线等。 还公开了一种制备高纯度金属的方法，其包括使含盐钽与至少一种能够将该盐还原成钽粉末的化合物和在反应容器中的第二盐反应的步骤。 反应容器中的反应容器或衬套以及搅拌器上的搅拌器或衬套由具有熔融钽的相同或更高蒸气压的金属材料制成。 高纯度钽优选具有微细且均匀的微结构。
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