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    High purity tantalum, products containing the same, and methods of making the same
    2.
    发明授权
    High purity tantalum, products containing the same, and methods of making the same 有权

    公开(公告)号：US07585380B2

    公开(公告)日：2009-09-08

    申请号：US10320980

    申请日：2002-12-17

    申请人： Christopher A. Michaluk ,  Louis E. Huber ,  Mark N. Kawchak ,  James D. Maguire, Jr.

    发明人： Christopher A. Michaluk ,  Louis E. Huber ,  Mark N. Kawchak ,  James D. Maguire, Jr.

    IPC分类号： C22F1/18 ,  C22B3/44

    CPC分类号： C23C14/3414 ,  C22B34/24 ,  Y10S148/014 ,  Y10S148/158

    摘要： High purity tantalum metals and alloys containing the same are described. The tantalum metal preferably has a purity of at least 99.995% and more preferably at least 99.999%. In addition, tantalum metal and alloys thereof are described, which either have a grain size of about 50 microns or less, or a texture in which a (100) intensity within any 5% increment of thickness is less than about 15 random, or an incremental log ratio of (111):(100) intensity of greater than about −4.0, or any combination of these properties. Also described are articles and components made from the tantalum metal which include, but are not limited to, sputtering targets, capacitor cans, resistive film layers, wire, and the like. Also disclosed is a process for making the high purity metal which includes the step of reacting a salt-containing tantalum with at least one compound capable of reducing this salt to tantalum powder and a second salt in a reaction container. The reaction container or liner in the reaction container and the agitator or liner on the agitator are made from a metal material having the same or higher vapor pressure of melted tantalum. The high purity tantalum preferably has a fine and uniform microstructure.

    High purity tantalum, products containing the same, and methods of making the same
    3.
    发明授权
    High purity tantalum, products containing the same, and methods of making the same 有权
    高纯度钽，含有相同的产品及其制造方法

    公开(公告)号：US07431782B2

    公开(公告)日：2008-10-07

    申请号：US10145336

    申请日：2002-05-14

    申请人： Christopher A. Michaluk ,  Louis E. Huber ,  Mark N. Kawchak ,  James D. Maguire, Jr.

    发明人： Christopher A. Michaluk ,  Louis E. Huber ,  Mark N. Kawchak ,  James D. Maguire, Jr.

    IPC分类号： C22F1/18 ,  C22B3/44 ,  C22B9/04

    CPC分类号： C23C14/3414 ,  C22B34/24 ,  Y10S148/014 ,  Y10S148/158

    摘要： High purity tantalum metals and alloys containing the same are described. The tantalum metal preferably has a purity of at least 99.995% and more preferably at least 99.999%. In addition, tantalum metal and alloys thereof are described, which either have a grain size of about 50 microns or less, or a texture in which a (100) intensity within any 5% increment of thickness is less than about 15 random, or an incremental log ratio of (111):(100) intensity of greater than about −4.0, or any combination of these properties. Also described are articles and components made from the tantalum metal which include, but are not limited to, sputtering targets, capacitor cans, resistive film layers, wire, and the like. Also disclosed is a process for making the high purity metal which includes the step of reacting a salt-containing tantalum with at least one compound capable of reducing this salt to tantalum powder and a second salt in a reaction container. The reaction container or liner in the reaction container and the agitator or liner on the agitator are made from a metal material having the same or higher vapor pressure of melted tantalum. The high purity tantalum preferably has a fine and uniform microstructure.

    摘要翻译： 描述了高纯度钽金属及含有它们的合金。 钽金属的纯度优选为99.995％以上，更优选为99.999％以上。 此外，描述了钽金属及其合金，其具有约50微米或更小的粒度，或其中任何5％厚度增量内的（100）强度小于约15度的质地，或 （111）:( 100）强度的增量对数比大于约-4.0，或这些性质的任何组合。 还描述了由钽金属制成的制品和部件，其包括但不限于溅射靶，电容器罐，电阻膜层，导线等。 还公开了一种制备高纯度金属的方法，其包括使含盐钽与至少一种能够将该盐还原成钽粉末的化合物和在反应容器中的第二盐反应的步骤。 反应容器中的反应容器或衬套以及搅拌器上的搅拌器或衬套由具有熔融钽的相同或更高蒸气压的金属材料制成。 高纯度钽优选具有微细且均匀的微结构。

    High purity tantalum, products containing the same, and methods of making the same
    4.
    发明授权
    High purity tantalum, products containing the same, and methods of making the same 有权
    高纯度钽，含有相同的产品及其制造方法

    公开(公告)号：US06893513B2

    公开(公告)日：2005-05-17

    申请号：US09922815

    申请日：2001-08-06

    申请人： Christopher A. Michaluk ,  Louis E. Huber ,  Mark N. Kawchak ,  James D. Maguire, Jr.

    发明人： Christopher A. Michaluk ,  Louis E. Huber ,  Mark N. Kawchak ,  James D. Maguire, Jr.

    IPC分类号： B22F9/24 ,  C22B3/44 ,  C22B9/04 ,  C22B9/20 ,  C22B9/22 ,  C22B34/24 ,  C22C27/02 ,  C22F1/00 ,  C22F1/18 ,  C23C14/34

    CPC分类号： C23C14/3414 ,  C22B34/24 ,  Y10S148/014 ,  Y10S148/158

    摘要： High purity tantalum metals and alloys containing the same are described. The tantalum metal preferably has a purity of at least 99.995% and more preferably at least 99.999%. In addition, tantalum metal and alloys thereof are described, which either have a grain size of about 50 microns or less, or a texture in which a (100) intensity within any 5% increment of thickness is less than about 15 random, or an incremental log ratio of (111):(100) intensity of greater than about −4.0, or any combination of these properties. Also described are articles and components made from the tantalum metal which include, but are not limited to, sputtering targets, capacitor cans, resistive film layers, wire, and the like. Also disclosed is a process for making the high purity metal which includes the step of reacting a salt-containing tantalum with at least one compound capable of reducing this salt to tantalum powder and a second salt in a reaction container. The reaction container or liner in the reaction container and the agitator or liner on the agitator are made from a metal material having the same or higher vapor pressure of melted tantalum. The high purity tantalum preferably has a fine and uniform microstructure.

    摘要翻译： 描述了高纯度钽金属及含有它们的合金。 钽金属的纯度优选为99.995％以上，更优选为99.999％以上。 此外，描述了钽金属及其合金，其具有约50微米或更小的粒度，或其中任何5％厚度增量内的（100）强度小于约15度的质地，或 （111）:( 100）强度的增量对数比大于约-4.0，或这些性质的任何组合。 还描述了由钽金属制成的制品和部件，其包括但不限于溅射靶，电容器罐，电阻膜层，导线等。 还公开了一种制备高纯度金属的方法，其包括使含盐钽与至少一种能够将该盐还原成钽粉末的化合物和在反应容器中的第二盐反应的步骤。 反应容器中的反应容器或衬套以及搅拌器上的搅拌器或衬套由具有熔融钽的相同或更高蒸气压的金属材料制成。 高纯度钽优选具有微细且均匀的微结构。

    Hollow cathode target and methods of making same
    8.
    发明授权
    Hollow cathode target and methods of making same 有权
    空心阴极靶及其制作方法

    公开(公告)号：US07468110B2

    公开(公告)日：2008-12-23

    申请号：US11091029

    申请日：2005-03-28

    申请人： Robert B. Ford ,  Christopher A. Michaluk

    发明人： Robert B. Ford ,  Christopher A. Michaluk

    IPC分类号： C22F1/18 ,  C22F1/08 ,  C23C14/34 ,  C23C14/00 ,  C25B9/00 ,  C25B11/00 ,  C21D1/00

    CPC分类号： H01J37/342 ,  C23C14/3407 ,  C23C14/3414 ,  H01J37/3491

    摘要： Sputtering targets and methods of making sputtering targets are described. The method includes the steps of: providing a sputtering metal workpiece made of a valve metal; transverse cold-rolling the sputtering metal workpiece to obtain a rolled workpiece; and cold-working the rolled workpiece to obtain a shaped workpiece. The sputtering targets exhibits a substantially consistent grain structure and/or texture on at least the sidewalls.

    摘要翻译： 描述溅射靶和制造溅射靶的方法。 该方法包括以下步骤：提供由阀金属制成的溅射金属工件; 横向冷轧溅射金属工件以获得轧制工件; 并对轧制工件进行冷加工以获得成形工件。 溅射靶在至少侧壁上表现出基本一致的晶粒结构和/或纹理。

    Tantalum-silicon alloys and products containing the same and processes of making the same
    9.
    发明授权
    Tantalum-silicon alloys and products containing the same and processes of making the same 失效

    公开(公告)号：US06576069B1

    公开(公告)日：2003-06-10

    申请号：US09314506

    申请日：1999-05-19

    申请人： Louis E. Huber, Jr. ,  Christopher A. Michaluk

    发明人： Louis E. Huber, Jr. ,  Christopher A. Michaluk

    IPC分类号： C22C2702

    CPC分类号： C22B5/04 ,  C22B34/24 ,  C22C1/045 ,  C22C27/02 ,  C22F1/18

    摘要： An alloy comprising tantalum and silicon is described. The tantalum is the predominant metal present. The alloy also has a uniformity of tensile strength when formed into a wire, such that the maximum population standard deviation of tensile strength for the wire is about 3 KSI for an unannealed wire at finish diameter and about 2 KSI for an annealed wire at finish diameter. Also described is a process of making a Ta-Si alloy which includes reducing a silicon-containing solid and a tantalum-containing solid into a liquid state and mixing the liquids to form a liquid blend and forming a solid alloy from the liquid blend. Another process of making a Ta-Si alloy is described which involves blending powders containing tantalum or an oxide thereof with powders containing silicon or a silicon-containing compound to form a blend and then reducing the blend to a liquid state and forming a solid alloy from the liquid state. Also, a method of increasing the uniformity of tensile strength in tantalum metal, a method of reducing embrittlement of tantalum metal, and a method of imparting a controlled mechanical tensile strength in tantalum metal are described which involve adding silicon to tantalum metal so as to form a Ta-Si alloy.

    Tantalum and niobium billets and methods of producing the same
    10.
    发明授权
    Tantalum and niobium billets and methods of producing the same 有权
    钽和铌坯及其制造方法

    公开(公告)号：US08231744B2

    公开(公告)日：2012-07-31

    申请号：US12269077

    申请日：2008-11-12

    申请人： Christopher A. Michaluk

    发明人： Christopher A. Michaluk

    IPC分类号： C22C27/02

    CPC分类号： C23C14/3414 ,  C22C27/02 ,  C22F1/18

    摘要： Extruded tantalum billets and niobium billets are described having a substantially uniform grain size and preferably an average grain size of about 150 microns or less and more preferably an average grain size of about 100 microns or less. The extruded billet can then be forged or processed by other conventional techniques to form end use products such as sputtering targets. A process for making the extruded tantalum billets or niobium billets is also described and involves extruding a starting billet at a sufficient temperature and for a sufficient time to at least partially recrystallize the billet and form the extruded billet of the present invention.

    摘要翻译： 描述了挤出的钽坯和铌坯具有基本均匀的晶粒尺寸，优选平均晶粒尺寸为约150微米或更小，更优选平均晶粒尺寸为约100微米或更小。 然后可以通过其它常规技术来锻造或加工挤出的坯料，以形成诸如溅射靶的最终用途产品。 还描述了制造挤出的钽坯料或铌坯料的方法，并且包括在足够的温度下挤出起始坯料并且足够的时间使坯料至少部分地重结晶并形成本发明的挤出坯料。