公开(公告)号：US11488923B2

公开(公告)日：2022-11-01

申请号：US16421824

申请日：2019-05-24

Applicant: Cree, Inc.

Inventor： Sung Chul Joo ,  Alexander Komposch ,  Brian William Condie ,  Benjamin Law ,  Jae Hyung Jeremiah Park

IPC: H01L23/00

Abstract: A semiconductor device package includes a substrate, a silicon (Si) or silicon carbide (SiC) semiconductor die, and a metal layer on a surface of the semiconductor die. The metal layer includes a bonding surface that is attached to a surface of the substrate by a die attach material. The bonding surface includes opposing edges that extend along a perimeter of the semiconductor die, and one or more non-orthogonal corners that are configured to reduce stress at an interface between the bonding surface and the die attach material. Related devices and fabrication methods are also discussed.

公开(公告)号：US20200373270A1

公开(公告)日：2020-11-26

申请号：US16421824

申请日：2019-05-24

Applicant: Cree, Inc.

Inventor： Sung Chul Joo ,  Alexander Komposch ,  Brian William Condie ,  Benjamin Law ,  Jae Hyung Jeremiah Park

IPC: H01L23/00

Abstract: A semiconductor device package includes a substrate, a silicon (Si) or silicon carbide (SiC) semiconductor die, and a metal layer on a surface of the semiconductor die. The metal layer includes a bonding surface that is attached to a surface of the substrate by a die attach material. The bonding surface includes opposing edges that extend along a perimeter of the semiconductor die, and one or more non-orthogonal corners that are configured to reduce stress at an interface between the bonding surface and the die attach material. Related devices and fabrication methods are also discussed.