公开(公告)号：US09142636B2

公开(公告)日：2015-09-22

申请号：US13892530

申请日：2013-05-13

Applicant: Cree, Inc.

Inventor： Scott T. Sheppard ,  Andrew K. Mackenzie ,  Scott T. Allen ,  Richard P. Smith

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/80 ,  H01L29/43 ,  H01L29/423 ,  H01L29/20

CPC classification number: H01L29/66431 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/432 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7787 ,  H01L29/802 ,  H01L2924/13064

Abstract: A III-Nitride field-effect transistor, specifically a HEMT, comprises a channel layer, a barrier layer on the channel layer, an etch stop layer on the cap layer, a dielectric layer on the etch stop layer, a gate recess that extends to the barrier layer, and a gate contact in the gate recess. The etch stop layer may reduce damage associated with forming the recessed gate by not exposing the barrier layer to dry etching. The etch stop layer in the recess is removed and the remaining etch stop layer serves as a passivation layer.

Abstract translation: III型氮化物场效应晶体管，特别是HEMT，包括沟道层，沟道层上的势垒层，覆盖层上的蚀刻停止层，蚀刻停止层上的介电层，延伸到 阻挡层和栅极接触。 蚀刻停止层可以通过不将阻挡层暴露于干蚀刻来减少与形成凹陷栅的相关的损伤。 去除凹槽中的蚀刻停止层，剩余的蚀刻停止层用作钝化层。

公开(公告)号：US20130252386A1

公开(公告)日：2013-09-26

申请号：US13892530

申请日：2013-05-13

Applicant: Cree, Inc.

Inventor： Scott T. Sheppard ,  Andrew K. Mackenzie ,  Scott T. Allen ,  Richard P. Smith

IPC: H01L29/66

CPC classification number: H01L29/66431 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/432 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7787 ,  H01L29/802 ,  H01L2924/13064

Abstract: A III-Nitride field-effect transistor, specifically a HEMT, comprises a channel layer, a barrier layer on the channel layer, an etch stop layer on the cap layer, a dielectric layer on the etch stop layer, a gate recess that extends to the barrier layer, and a gate contact in the gate recess. The etch stop layer may reduce damage associated with forming the recessed gate by not exposing the barrier layer to dry etching. The etch stop layer in the recess is removed and the remaining etch stop layer serves as a passivation layer.

Abstract translation: III型氮化物场效应晶体管，特别是HEMT，包括沟道层，沟道层上的势垒层，覆盖层上的蚀刻停止层，蚀刻停止层上的介电层，延伸到 阻挡层和栅极接触。 蚀刻停止层可以通过不将阻挡层暴露于干蚀刻来减少与形成凹陷栅的相关的损伤。 去除凹槽中的蚀刻停止层，剩余的蚀刻停止层用作钝化层。