公开(公告)号：US20230127582A1

公开(公告)日：2023-04-27

申请号：US17905352

申请日：2021-03-02

Applicant: CROCUS Technology SA

Inventor： Clarisse Ducruet ,  Léa Cuchet ,  Jeffrey Childress

IPC: G01R33/09 ,  H10N50/85 ,  H10N50/10 ,  H01F10/32

Abstract: A magnetoresistive element for a two-dimensional magnetic field sensor, including: a ferromagnetic reference layer having a fixed reference magnetization, a ferromagnetic sense layer having a sense magnetization that can be freely oriented relative to the reference magnetization in the presence of an external magnetic field, and a tunnel barrier layer between the reference and sense ferromagnetic layers; the reference layer including a reference coupling layer between a reference pinned layer and a reference coupled layer; the reference coupled layer including a first coupled sublayer in contact with the reference coupling layer, a second coupled sublayer, a third coupled sublayer and a insert layer between the second and third coupled sublayers; the insert layer comprising a transition metal and has a thickness between about 0.1 and about 0.5 nm, and the thickness of the reference coupled layer is between about 1 nm and about 5 nm.

公开(公告)号：US20220308133A1

公开(公告)日：2022-09-29

申请号：US17597195

申请日：2020-06-26

Applicant: Crocus Technology SA

Inventor： Léa Cuchet ,  Clarisse Ducruet ,  Jeffrey Childress

IPC: G01R33/09 ,  G01R15/20

Abstract: Magnetic field sensor for sensing a two-dimensional external magnetic field, including a magnetic tunnel junction including a reference layer having a fixed reference magnetization, a sense ferromagnetic layer having a sense magnetization, and a tunnel barrier layer between the sense and reference ferromagnetic layers; the sense ferromagnetic layer including a first sense ferromagnetic layer in contact with the tunnel barrier layer, a second sense ferromagnetic layer, and a first non-magnetic layer between the first and second sense ferromagnetic layers; the second sense ferromagnetic layer includes a plurality of multilayer element, each multilayer element including a second non-magnetic layer between two second ferromagnetic sense layers; and wherein the second sense ferromagnetic layer has a thickness equal or less than 12 nm.

公开(公告)号：US20230066027A1

公开(公告)日：2023-03-02

申请号：US17760109

申请日：2021-01-29

Applicant: CROCUS Technology SA

Inventor： Léa Cuchet ,  Andrey Timopheev ,  Jeffrey Childress

IPC: G01R33/00 ,  G01R33/09

Abstract: A magnetoresistive sensor element including: a reference layer having a pinned reference magnetization; a sense layer having a free sense magnetization comprising a stable vortex configuration reversibly movable in accordance to an external magnetic field to be measured; a tunnel barrier layer between the reference layer and the sense layer; wherein the sense layer includes a first ferromagnetic sense portion in contact with the tunnel barrier layer and a second ferromagnetic sense portion in contact with the first ferromagnetic sense portion; the second ferromagnetic sense portion including a dilution element in a proportion such that a temperature dependence of a magnetic susceptibility of the sense layer substantially compensates a temperature dependence of a tunnel magnetoresistance of the magnetoresistive sensor element. Also, a method for manufacturing the magnetoresistive sensor element.