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公开(公告)号：US20230127582A1
公开(公告)日：2023-04-27
申请号：US17905352
申请日：2021-03-02
Applicant: CROCUS Technology SA
Inventor： Clarisse Ducruet , Léa Cuchet , Jeffrey Childress
Abstract: A magnetoresistive element for a two-dimensional magnetic field sensor, including: a ferromagnetic reference layer having a fixed reference magnetization, a ferromagnetic sense layer having a sense magnetization that can be freely oriented relative to the reference magnetization in the presence of an external magnetic field, and a tunnel barrier layer between the reference and sense ferromagnetic layers; the reference layer including a reference coupling layer between a reference pinned layer and a reference coupled layer; the reference coupled layer including a first coupled sublayer in contact with the reference coupling layer, a second coupled sublayer, a third coupled sublayer and a insert layer between the second and third coupled sublayers; the insert layer comprising a transition metal and has a thickness between about 0.1 and about 0.5 nm, and the thickness of the reference coupled layer is between about 1 nm and about 5 nm.
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2.发明授权公开(公告)号：US09331268B2
公开(公告)日：2016-05-03
申请号：US14405918
申请日：2013-06-07
Applicant: CROCUS Technology SA
Inventor： Ioan Lucian Prejbeanu , Bernard Dieny , Clarisse Ducruet , Lucien Lombard
CPC classification number: H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1675 , H01L43/02
Abstract: A thermally assisted switching MRAM element including a magnetic tunnel junction including a reference layer having a reference magnetization; a storage layer having a storage magnetization; a tunnel barrier layer included between the storage layer and the reference layer; and a storage antiferromagnetic layer exchange-coupling the storage layer such as to pin the storage magnetization at a low temperature threshold and to free it at a high temperature threshold. The antiferromagnetic layer includes: at least one first antiferromagnetic layer having a first storage blocking temperature, and at least one second antiferromagnetic layer having a second storage blocking temperature; wherein the first storage blocking temperature is below 200° C. and the second storage blocking temperature is above 250° C. The MRAM element combines better data retention compared with known MRAM elements with low writing mode operating temperature.
Abstract translation: 一种热辅助切换MRAM元件，包括具有参考磁化的参考层的磁性隧道结; 具有存储磁化的存储层; 包括在所述存储层和所述参考层之间的隧道势垒层; 以及存储反铁磁层，其将存储层交换耦合，以便在低温阈值下固定存储磁化并将其在高温阈值下释放。 反铁磁层包括：具有第一存储阻挡温度的至少一个第一反铁磁层和具有第二存储阻挡温度的至少一个第二反铁磁层; 其中第一存储阻挡温度低于200℃，第二存储阻挡温度高于250℃。与具有低写入模式工作温度的已知MRAM元件相比，MRAM元件结合了更好的数据保留。
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公开(公告)号：US20220308133A1
公开(公告)日：2022-09-29
申请号：US17597195
申请日：2020-06-26
Applicant: Crocus Technology SA
Inventor： Léa Cuchet , Clarisse Ducruet , Jeffrey Childress
Abstract: Magnetic field sensor for sensing a two-dimensional external magnetic field, including a magnetic tunnel junction including a reference layer having a fixed reference magnetization, a sense ferromagnetic layer having a sense magnetization, and a tunnel barrier layer between the sense and reference ferromagnetic layers; the sense ferromagnetic layer including a first sense ferromagnetic layer in contact with the tunnel barrier layer, a second sense ferromagnetic layer, and a first non-magnetic layer between the first and second sense ferromagnetic layers; the second sense ferromagnetic layer includes a plurality of multilayer element, each multilayer element including a second non-magnetic layer between two second ferromagnetic sense layers; and wherein the second sense ferromagnetic layer has a thickness equal or less than 12 nm.
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4.发明申请公开(公告)号：US20150123224A1
公开(公告)日：2015-05-07
申请号：US14405918
申请日：2013-06-07
Applicant: CROCUS Technology SA
Inventor： Ioan Lucian Prejbeanu , Bernard Dieny , Clarisse Ducruet , Lucien Lombard
CPC classification number: H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1675 , H01L43/02
Abstract: A thermally assisted switching MRAM element including a magnetic tunnel junction including a reference layer having a reference magnetization; a storage layer having a storage magnetization; a tunnel barrier layer included between the storage layer and the reference layer; and a storage antiferromagnetic layer exchange-coupling the storage layer such as to pin the storage magnetization at a low temperature threshold and to free it at a high temperature threshold. The antiferromagnetic layer includes: at least one first antiferromagnetic layer having a first storage blocking temperature, and at least one second antiferromagnetic layer having a second storage blocking temperature; wherein the first storage blocking temperature is below 200° C. and the second storage blocking temperature is above 250° C. The MRAM element combines better data retention compared with known MRAM elements with low writing mode operating temperature.
Abstract translation: 一种热辅助切换MRAM元件，包括具有参考磁化的参考层的磁性隧道结; 具有存储磁化的存储层; 包括在所述存储层和所述参考层之间的隧道势垒层; 以及存储反铁磁层，其将存储层交换耦合，以便在低温阈值下固定存储磁化并将其在高温阈值下释放。 反铁磁层包括：具有第一存储阻挡温度的至少一个第一反铁磁层和具有第二存储阻挡温度的至少一个第二反铁磁层; 其中第一存储阻挡温度低于200℃，第二存储阻挡温度高于250℃。与具有低写入模式工作温度的已知MRAM元件相比，MRAM元件结合了更好的数据保留。
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