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1.发明公开公开(公告)号：US20240019509A1
公开(公告)日：2024-01-18
申请号：US18251296
申请日：2021-10-28
申请人： CROCUS Technology SA
CPC分类号： G01R33/098 , G01R33/093 , G01R33/0052 , H01F1/0009
摘要： A magnetoresistive element for a magnetic sensor, the magnetoresistive element including a tunnel barrier layer between a reference layer having a fixed reference magnetization and a sense layer having a free sense magnetization, wherein the sense magnetization includes a stable vortex configuration. The magnetoresistive element further includes a reference pinning layer in contact with the reference layer and pining the reference magnetization by exchange-bias at a first blocking temperature. The magnetoresistive element further includes a sense pinning layer in contact with the sense layer and pining the sense magnetization by exchange-bias at a second blocking temperature lower that the first blocking temperature. Additionally, a method for manufacturing the magnetoresistive element.
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公开(公告)号：US20230066027A1
公开(公告)日：2023-03-02
申请号：US17760109
申请日：2021-01-29
申请人： CROCUS Technology SA
发明人： Léa Cuchet , Andrey Timopheev , Jeffrey Childress
摘要： A magnetoresistive sensor element including: a reference layer having a pinned reference magnetization; a sense layer having a free sense magnetization comprising a stable vortex configuration reversibly movable in accordance to an external magnetic field to be measured; a tunnel barrier layer between the reference layer and the sense layer; wherein the sense layer includes a first ferromagnetic sense portion in contact with the tunnel barrier layer and a second ferromagnetic sense portion in contact with the first ferromagnetic sense portion; the second ferromagnetic sense portion including a dilution element in a proportion such that a temperature dependence of a magnetic susceptibility of the sense layer substantially compensates a temperature dependence of a tunnel magnetoresistance of the magnetoresistive sensor element. Also, a method for manufacturing the magnetoresistive sensor element.
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公开(公告)号：US20180292473A1
公开(公告)日：2018-10-11
申请号：US15481805
申请日：2017-04-07
申请人： CROCUS Technology SA
摘要： A magnetic sensor cell including a magnetic tunnel junction including a reference layer having a reference magnetization oriented substantially parallel to the plane of the reference layer, a sense layer having a sense magnetization, and a tunnel barrier layer between the sense and reference layers. The sense layer includes an intrinsic anisotropy substantially perpendicular to the plane of the sense layer such that the sense magnetization is orientable between an initial direction perpendicular to the plane of the sense layer and a direction parallel to the plane of the sense layer; the intrinsic anisotropy having in anisotropy field being above 150 Oe.
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公开(公告)号：US20200243127A1
公开(公告)日：2020-07-30
申请号：US16633775
申请日：2018-06-25
申请人： Crocus Technology SA
摘要： An apparatus for generating a magnetic field including permanent magnets arranged in a plane, each magnet being spatially separated along the plane from the adjacent magnet by a predetermined spacing, each magnet having a magnetic polarity opposed to the polarity of the adjacent magnet such that a magnetic field of adjacent magnets is oriented substantially perpendicular to the plane and in opposite directions, each magnet being spatially separated in the plane from the adjacent magnet by a nonmagnetic material. A method for programming a magnetic device or sensor device using the apparatus is also described.
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5.发明公开公开(公告)号：US20230292624A1
公开(公告)日：2023-09-14
申请号：US17999578
申请日：2021-05-27
申请人： CROCUS Technology SA
摘要： A magnetic sensor including a plurality of magnetoresistive elements; each magnetoresistive element including a ferromagnetic layer having a magnetization that is orientable at or above a threshold temperature; the magnetic sensor further includes a plasmonic structure destined to be irradiated by electromagnetic radiation and including a spatially periodic plasmonic array of metallic structures. The period of the plasmonic array and the lateral dimension of the metallic structures are adjusted to obtain plasmon resonance of the plasmonic structure for a given wavelength of the electromagnetic radiation. The plasmonic array is arranged in the magnetic sensor such as to heat the first ferromagnetic layer at or above the threshold temperature, from the enhanced absorption of the electromagnetic radiation by plasmon resonance. The present disclosure further concerns a system including the sensor and an emitting device configured to emit electromagnetic radiation.
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公开(公告)号：US20230127582A1
公开(公告)日：2023-04-27
申请号：US17905352
申请日：2021-03-02
申请人： CROCUS Technology SA
发明人： Clarisse Ducruet , Léa Cuchet , Jeffrey Childress
摘要： A magnetoresistive element for a two-dimensional magnetic field sensor, including: a ferromagnetic reference layer having a fixed reference magnetization, a ferromagnetic sense layer having a sense magnetization that can be freely oriented relative to the reference magnetization in the presence of an external magnetic field, and a tunnel barrier layer between the reference and sense ferromagnetic layers; the reference layer including a reference coupling layer between a reference pinned layer and a reference coupled layer; the reference coupled layer including a first coupled sublayer in contact with the reference coupling layer, a second coupled sublayer, a third coupled sublayer and a insert layer between the second and third coupled sublayers; the insert layer comprising a transition metal and has a thickness between about 0.1 and about 0.5 nm, and the thickness of the reference coupled layer is between about 1 nm and about 5 nm.
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公开(公告)号：US10663537B2
公开(公告)日：2020-05-26
申请号：US15481805
申请日：2017-04-07
申请人： CROCUS Technology SA
摘要： A magnetic sensor cell including a magnetic tunnel junction including a reference layer having a reference magnetization oriented substantially parallel to the plane of the reference layer, a sense layer having a sense magnetization, and a tunnel barrier layer between the sense and reference layers. The sense layer includes an intrinsic anisotropy substantially perpendicular to the plane of the sense layer such that the sense magnetization is orientable between an initial direction perpendicular to the plane of the sense layer and a direction parallel to the plane of the sense layer; the intrinsic anisotropy having in anisotropy field being above 150 Oe.
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8.发明公开公开(公告)号：US20230213597A1
公开(公告)日：2023-07-06
申请号：US17998984
申请日：2021-05-10
申请人： CROCUS Technology SA
CPC分类号： G01R33/0017 , G01R33/098 , G01R33/1215
摘要： Magnetic angular sensor element destined to sense an external magnetic field, including a magnetic tunnel junction containing a ferromagnetic pinned layer having a pinned magnetization, a ferromagnetic sensing layer, and a tunnel magnetoresistance barrier layer; the ferromagnetic sensing layer including a first sensing layer being in direct contact with the barrier layer and having a first sensing magnetization, a second sensing layer having a second sense magnetization, and a metallic spacer between the first sensing layer and the second sensing layer; wherein the metallic spacer is configured to provide an antiferromagnetic coupling between the first sensing magnetization and the second sensing magnetization such that the first sensing magnetization is oriented substantially antiparallel to the second sensing magnetization; the second sensing magnetization being larger than the first sensing magnetization, such that the second sensing magnetization is oriented in accordance with the direction of the external magnetic field.
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公开(公告)号：US20220308133A1
公开(公告)日：2022-09-29
申请号：US17597195
申请日：2020-06-26
申请人： Crocus Technology SA
发明人： Léa Cuchet , Clarisse Ducruet , Jeffrey Childress
摘要： Magnetic field sensor for sensing a two-dimensional external magnetic field, including a magnetic tunnel junction including a reference layer having a fixed reference magnetization, a sense ferromagnetic layer having a sense magnetization, and a tunnel barrier layer between the sense and reference ferromagnetic layers; the sense ferromagnetic layer including a first sense ferromagnetic layer in contact with the tunnel barrier layer, a second sense ferromagnetic layer, and a first non-magnetic layer between the first and second sense ferromagnetic layers; the second sense ferromagnetic layer includes a plurality of multilayer element, each multilayer element including a second non-magnetic layer between two second ferromagnetic sense layers; and wherein the second sense ferromagnetic layer has a thickness equal or less than 12 nm.
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公开(公告)号：US20240027551A1
公开(公告)日：2024-01-25
申请号：US18256494
申请日：2021-12-09
申请人： CROCUS Technology SA
发明人： Jeffrey Childress , Nikita Strelkov
IPC分类号： G01R33/09
CPC分类号： G01R33/098
摘要： Magnetoresistive element including a reference layer having a fixed reference magnetization, a sense layer having a free sense magnetization and a tunnel barrier layer between the reference layer and the sense layer; the magnetoresistive element being configured to measure an external magnetic field oriented substantially perpendicular to the plane of the layers. The reference magnetization being oriented substantially perpendicular to the plane of the reference layer. The sense magnetization including a vortex configuration in the absence of an external magnetic field, the vortex configuration being substantially parallel to the plane of the sense layer and having a vortex core magnetization along an out-of-plane axis substantially perpendicular to the plane of the sense layer.
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