公开(公告)号：US10316428B2

公开(公告)日：2019-06-11

申请号：US15237113

申请日：2016-08-15

申请人： Crystal IS, Inc.

发明人： Sandra B. Schujman ,  Shailaja P. Rao ,  Robert T. Bondokov ,  Kenneth E. Morgan ,  Glen A. Slack ,  Leo J. Schowalter

IPC分类号： C30B23/02 ,  C30B23/06 ,  H01L21/02 ,  C30B23/00 ,  C30B29/40 ,  C30B33/02 ,  C30B35/00

摘要： In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AlN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000° C., and cooling the bulk AlN crystal to a first temperature between approximately 1500° C. and approximately 1800° C. at a first rate less than approximately 250° C./hour.

公开(公告)号：US09447519B2

公开(公告)日：2016-09-20

申请号：US14687993

申请日：2015-04-16

申请人： Crystal IS, Inc.

发明人： Sandra B. Schujman ,  Shailaja P. Rao ,  Robert T. Bondokov ,  Kenneth E. Morgan ,  Glen A. Slack ,  Leo J. Schowalter

IPC分类号： C30B23/00 ,  C30B23/02 ,  H01L21/02 ,  C30B29/40 ,  C30B33/02 ,  C30B35/00

CPC分类号： C30B23/066 ,  C30B23/00 ,  C30B23/002 ,  C30B23/02 ,  C30B29/403 ,  C30B33/02 ,  C30B35/00 ,  H01L21/02389 ,  Y10T428/2982

摘要： In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AlN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000° C., and cooling the bulk AlN crystal to a first temperature between approximately 1500° C. and approximately 1800° C. at a first rate less than approximately 250° C./hour.

摘要翻译： 在各种实施方案中，形成单晶AlN的方法包括提供氧浓度小于约100ppm的基本上未掺杂的多晶AlN陶瓷，通过升华 - 重新缩合工艺在大于约2000℃的温度下形成单晶体AlN晶体 ℃，并以大约250℃/小时的第一速率将本体AlN晶体冷却至约1500℃至约1800℃的第一温度。

公开(公告)号：US10801127B2

公开(公告)日：2020-10-13

申请号：US16395543

申请日：2019-04-26

申请人： Crystal IS, Inc.

发明人： Sandra B. Schujman ,  Shailaja P. Rao ,  Robert T. Bondokov ,  Kenneth E. Morgan ,  Glen A. Slack ,  Leo J. Schowalter

IPC分类号： H01L21/02 ,  C30B23/06 ,  C30B23/00 ,  C30B29/40 ,  C30B23/02 ,  C30B33/02 ,  C30B35/00

摘要： In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AlN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000° C., and cooling the bulk AlN crystal to a first temperature between approximately 1500° C. and approximately 1800° C. at a first rate less than approximately 250° C./hour.

公开(公告)号：US20190316272A1

公开(公告)日：2019-10-17

申请号：US16395543

申请日：2019-04-26

申请人： Crystal IS, Inc.

发明人： Sandra B. Schujman ,  Shailaja P. Rao ,  Robert T. Bondokov ,  Kenneth E. Morgan ,  Glen A. Slack ,  Leo J. Schowalter

IPC分类号： C30B23/06 ,  C30B23/00 ,  C30B29/40 ,  C30B23/02 ,  H01L21/02

摘要： In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AlN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000° C., and cooling the bulk AlN crystal to a first temperature between approximately 1500° C. and approximately 1800° C. at a first rate less than approximately 250° C./hour.

公开(公告)号：US20160348273A1

公开(公告)日：2016-12-01

申请号：US15237113

申请日：2016-08-15

申请人： Crystal IS, Inc.

发明人： Sandra B. Schujman ,  Shailaja P. Rao ,  Robert T. Bondokov ,  Kenneth E. Morgan ,  Glen A. Slack ,  Leo J. Schowalter

IPC分类号： C30B23/06 ,  C30B23/00 ,  H01L21/02 ,  C30B29/40

CPC分类号： C30B23/066 ,  C30B23/00 ,  C30B23/002 ,  C30B23/02 ,  C30B29/403 ,  C30B33/02 ,  C30B35/00 ,  H01L21/02389 ,  Y10T428/2982

摘要： In various embodiments, methods of forming single-crystal AN include providing a substantially undoped polycrystalline AN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000 ° C., and cooling the bulk AN crystal to a first temperature between approximately 1500 ° C. and approximately 1800 ° C. at a first rate less than approximately 250 ° C./hour.

摘要翻译： 在各种实施方案中，形成单晶AN的方法包括提供氧浓度小于约100ppm的基本上未掺杂的多晶AN陶瓷，通过在大于约2000的温度下的升华 - 重新缩合方法形成单晶体AN晶体 ℃，并且以小于约250℃/小时的第一速率将本体AN晶体冷却至约1500℃至约1800℃的第一温度。