Abstract:
A process of forming a high-definition pattern by etching is provided. A photosensitive resin layer is formed on a metal substrate material having a center line-average surface roughness Ra of up to 0.10 nullm and a maximum surface roughness Rmax of up to 1.0 nullm to form a resist pattern. Then, the photosensitive resin layer provided on the metal substrate material is exposed to light to form a resist pattern. Finally, etching is carried out to form a pattern on the metal substrate material.