SEMICONDUCTOR DEVICE MANUFACTURING METHOD

    公开(公告)号:US20210358867A1

    公开(公告)日:2021-11-18

    申请号:US17286712

    申请日:2019-10-18

    Abstract: Provided is a method suitable for efficiently manufacturing a semiconductor device while preventing warpage of the wafer laminate in manufacturing a semiconductor device in which semiconductor elements are multilayered through laminating wafers in which the semiconductor elements are fabricated. The method includes at least: preparing a plurality of first wafer laminates each having a laminate configuration including a first and second wafers each having an element forming surface and a back surface opposite from the element forming surface, the laminate configuration wherein the element forming surface sides of the first and second wafers are bonded to each other; thinning the first wafer of the first wafer laminate to form a first wafer laminate having the thinned first wafer; and bonding the thinned first wafer sides of two first wafer laminates having undergone the thinning to each other to form a second wafer laminate.

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