Thermal processing apparatus and thermal processing method for heating substrate by light irradiation

    公开(公告)号:US09831108B2

    公开(公告)日:2017-11-28

    申请号:US14081013

    申请日:2013-11-15

    IPC分类号: H01L21/67

    CPC分类号: H01L21/67115

    摘要: A susceptor that holds a semiconductor wafer placed thereon is capable of moving up and down inside a chamber. For preheating with a halogen lamp, the susceptor moves to a preheating position. The preheating position is a height of the susceptor that achieves the most uniform in-plane illumination distribution of light emitted from the halogen lamp and applied to the semiconductor wafer. After the preheating is finished, the susceptor moves to a flash heating position for irradiation with a flash from a flash lamp. The flash heating position is a height of the susceptor that achieves the most uniform in-plane illumination distribution of a flash emitted from the flash lamp and applied to the semiconductor wafer.

    Heat treatment apparatus for heating substrate by irradiating substrate with flash of light
    2.
    发明授权
    Heat treatment apparatus for heating substrate by irradiating substrate with flash of light 有权
    用于通过用闪光照射基板来加热基板的热处理装置

    公开(公告)号:US09351341B2

    公开(公告)日:2016-05-24

    申请号:US13755165

    申请日:2013-01-31

    发明人: Nobuhiko Nishide

    CPC分类号: H05B1/00 H05B3/0047

    摘要: The front surface of a semiconductor wafer with a back surface supported by lift pins is irradiated with a flash of light from flash lamps, so that the semiconductor wafer is heated. A transparent restriction ring made of quartz is into abutment with or close to a peripheral portion of the front surface of the semiconductor wafer. In this state, the flash irradiation is performed. If the temperature of the front surface of the semiconductor wafer rises rapidly when the flash irradiation is performed, the restriction ring restrains the semiconductor wafer from jumping up from the lift pins. This prevents wafer cracking resulting from the jumping of the semiconductor wafer when the flash irradiation is performed.

    摘要翻译: 具有由提升销支撑的背面的半导体晶片的前表面被来自闪光灯的闪光照射,从而加热半导体晶片。 由石英制成的透明限制环与半导体晶片的前表面的周边部分邻接或靠近。 在该状态下,进行闪光照射。 如果在进行闪光照射时半导体晶片的前表面的温度快速上升,则限制环限制半导体晶片从提升销跳出。 这防止了当进行闪光照射时由于半导体晶片的跳跃而导致的晶片破裂。