公开(公告)号：US11828820B2

公开(公告)日：2023-11-28

申请号：US17780787

申请日：2019-12-03

Applicant: DALIAN UNIVERSITY OF TECHNOLOGY

Inventor： Huolin Huang ,  Hui Zhang

IPC: G01R33/07 ,  G01R33/02 ,  H10B61/00 ,  H10N52/01 ,  H10N52/80 ,  H10N52/00

CPC classification number: G01R33/072 ,  G01R33/0206 ,  G01R33/077 ,  H10B61/20 ,  H10N52/01 ,  H10N52/101 ,  H10N52/80

Abstract: A high-temperature three-dimensional Hall sensor with a real-time working temperature monitoring function includes a buffer layer, an epitaxial layer, and a barrier layer sequentially grown on a substrate. A high-density two-dimensional electron gas is induced by polarization charges in a potential well at an interface of heterojunctions of the epitaxial layer. A lower surface of the substrate includes a vertical Hall sensor for sensing a magnetic field parallel to a surface of a device. An upper surface of the barrier layer includes a “cross” horizontal Hall sensor for sensing a magnetic field perpendicular to the surface of the device.