Abstract:
IT IS FOUND THAT AS THE SEMICONDUCTOR COMPOSITION OF AN ELECTRONIC BISTABLE SEMICONDUCTOR SWITHCHING ELEMENT THERE MAY BE EMPLOYED SULFUR OR ANY OTHER SOLID GROUP VI ELEMENT, PREFERABLY SELENIUM, IN ADMIXTURE WITH ANTIMONY WITH LESS RIGID CONTROL WITH RESPECT TO PROPORTIONS THAN IS CONVENTIONAL FOR STIBNITE SWITCHES PROVIDED THAT THE COMPOSITION IS USED IN THE FORM OF A LAYER OF A THICKNESS NO GREATER THAN 1 MM. IT IS FOUND ADVANTAGEOUS TO PROVIDE THE LAYER ON AN ELECTRODE WHICH IS OF A HIGHLY THERMALLY CONDUCTIVE MATERIAL AND HAS A CROSS-SECTIONAL AREA GREATER THAN THE CROSS-SECT