SEMICONDUCTOR DEVICE
    1.
    发明公开

    公开(公告)号:US20240021721A1

    公开(公告)日:2024-01-18

    申请号:US18476603

    申请日:2023-09-28

    CPC classification number: H01L29/7808 H01L29/0611 H01L29/866

    Abstract: In a semiconductor device, a semiconductor element having a plurality of gate electrodes including a first gate electrode and a second gate electrode. An electrical connection member is electrically connected to a front surface electrode of the semiconductor element. A cell region of the semiconductor element includes a first cell region that allows a current to flow between the front surface electrode and a back surface electrode when the first gate electrode is applied with a voltage, and a second cell region that allows a current to flow between the front surface electrode and the back surface electrode when the second gate electrode is applied with a voltage. The semiconductor element and a control circuit are configured to generate a time difference in cutting off the current between the first cell region and the second cell region.

    SHUNT RESISTOR AND METHOD OF MOUNTING THE SAME

    公开(公告)号:US20190146007A1

    公开(公告)日:2019-05-16

    申请号:US16245611

    申请日:2019-01-11

    Abstract: A shunt resistor has a resistance element with a predetermined resistivity at least at a part, and the shunt resistor to which a bonding wire is to be connected. The bonding wire is for detecting a value of current flowing between two electrodes bridged through the shunt resistor by detecting a voltage drop at the resistance element. The shunt resistor includes: a pair of connection parts to be respectively electrically connected to the two electrodes; a bridge part having the resistance element, extending from one of the connection parts to the other of the connection parts, and bridging the pair of connection parts; and a mark configured to define a virtual line segment. The mark is arranged to allow the virtual line segment to be oblique with respect to an extending direction of the bridge part.

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