公开(公告)号：US20180323261A1

公开(公告)日：2018-11-08

申请号：US15772125

申请日：2017-02-28

Applicant: DENSO CORPORATION

Inventor： Jun KAWAI ,  Kazuhiko SUGIURA ,  Yasuji KIMOTO ,  Kayo KONDO

IPC: H01L29/16 ,  H01L29/45 ,  H01L29/417 ,  H01L21/02 ,  H01L21/268 ,  H01L29/66

CPC classification number: H01L29/1608 ,  H01L21/02378 ,  H01L21/0485 ,  H01L21/268 ,  H01L21/3205 ,  H01L29/41725 ,  H01L29/456 ,  H01L29/66068

Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate that has a front surface and a rear surface, and is made of silicon carbide; and an ohmic electrode that is ohmically connected to the front surface or the rear surface of the semiconductor substrate. The ohmic electrode includes a metal silicide part and a metal carbide part. The metal silicide part surrounds a periphery of the metal carbide part that has a block shape. The metal silicide part is disposed between the semiconductor substrate and the metal carbide part.